Patents by Inventor Rongping Wang
Rongping Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170133208Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.Type: ApplicationFiled: January 20, 2017Publication date: May 11, 2017Inventors: Michael S. COX, Rongping WANG, Brian T. WEST, Roger M. JOHNSON, Colin John DICKINSON
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Publication number: 20170114462Abstract: Embodiments of the present disclosure generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of process chambers connected to a transfer chamber and each process chamber may simultaneously process four or more substrates. In order to reduce cost, each process chamber includes a substrate support for supporting four or more substrates, single showerhead disposed over the substrate support, and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead extending from the first surface to the second surface. Process uniformity is improved by increasing the density of the gas passages from the center of the showerhead to the edge of the showerhead.Type: ApplicationFiled: October 11, 2016Publication date: April 27, 2017Inventors: Lin ZHANG, Xuesong LU, Andrew V. LE, Zheng YUAN, Jang Seok OH, Joseph Jamil FARAH, Rongping WANG
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Publication number: 20170027049Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.Type: ApplicationFiled: May 6, 2016Publication date: January 26, 2017Inventors: Rongping WANG, Jibing ZENG, David Muquing HOU, Michael S. COX, Zheng YUAN, James L'HEUREUX
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Patent number: 9552967Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: GrantFiled: January 13, 2016Date of Patent: January 24, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Michael S. Cox, Rongping Wang, Brian T. West, Roger M. Johnson, Colin John Dickinson
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Patent number: 9543124Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: GrantFiled: December 31, 2015Date of Patent: January 10, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Michael S. Cox, Rongping Wang, Brian T. West, Roger M. Johnson, Colin John Dickinson
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Publication number: 20160347126Abstract: A tire with a new internal structure including automatic inflatable gas-chambers, assembly includes a connection arrangement comprising, sequentially, a rubber tire, a gas-chamber layer, a hollow layer and a metal wheel hub, from outside to inside, wherein a check valve is installed at a connection position between each gas-chamber of the gas-chamber layer and the hollow layer to inflate the connected gas-chamber automatically, meanwhile, prevent a backflow of the gas from the gas-chamber. The check valve described in the present application is a rubber valve, including a rubber valve body and a rubber valve plate, wherein, a center hole and an inflation hole are opened at the center of the rubber valve body, and a plane of the rubber valve body and a plane of the rubber valve plate are arranged in parallel, and meanwhile a center valve spindle contained by the rubber valve plate inserts the center hole of the rubber valve body.Type: ApplicationFiled: July 13, 2015Publication date: December 1, 2016Inventor: Rongping WANG
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Publication number: 20160300692Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.Type: ApplicationFiled: June 21, 2016Publication date: October 13, 2016Inventors: JIBING ZENG, BRIAN T. WEST, RONGPING WANG, MANOJ A. GAJENDRA
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Patent number: 9378928Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.Type: GrantFiled: July 29, 2014Date of Patent: June 28, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Jibing Zeng, Brian T. West, Rongping Wang, Manoj A. Gajendra
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Publication number: 20160133442Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: ApplicationFiled: January 13, 2016Publication date: May 12, 2016Inventors: Michael S. COX, Rongping WANG, Brian T. WEST, Roger M. JOHNSON, Colin John DICKINSON
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Publication number: 20160118226Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Inventors: Michael S. Cox, Rongping Wang, Brian T. West, Roger M. Johnson, Colin John Dickinson
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Publication number: 20160042916Abstract: Embodiments of the disclosure relate to a remote plasma source for cleaning an exhaust pipe. In one embodiment, an apparatus includes a substrate processing chamber, a pump positioned to evacuate the substrate processing chamber, and an abatement system. The abatement system comprises a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump, a reactor body connected to the gas delivery system through a delivery member, a cleaning gas source connected to the reactor body, and a power source positioned to ionize within the reactor body a cleaning gas from the cleaning gas source. Radicals and species of the cleaning gas react with post-process gases from the substrate processing chamber to convert them into a environmentally and process equipment friendly composition before entering the pump.Type: ApplicationFiled: June 11, 2015Publication date: February 11, 2016Inventor: Rongping WANG
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Patent number: 9240308Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: GrantFiled: September 26, 2014Date of Patent: January 19, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Michael S. Cox, Rongping Wang, Brian T. West, Roger M. Johnson, Colin John Dickinson
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Patent number: 9230780Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: GrantFiled: March 6, 2014Date of Patent: January 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Michael S. Cox, Rongping Wang, Brian T. West, Roger M. Johnson, Colin John Dickinson
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Publication number: 20150348754Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.Type: ApplicationFiled: July 29, 2014Publication date: December 3, 2015Inventors: JIBING ZENG, BRIAN T. WEST, RONGPING WANG, MANOJ A. GAJENDRA
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Publication number: 20150255256Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: ApplicationFiled: September 26, 2014Publication date: September 10, 2015Inventors: Michael S. COX, Rongping WANG, Brian T. WEST, Roger M. JOHNSON, Colin John DICKINSON
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Publication number: 20150255251Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.Type: ApplicationFiled: March 6, 2014Publication date: September 10, 2015Inventors: Michael S. COX, Rongping WANG, Brian T. WEST, Roger M. JOHNSON, Colin John DICKINSON
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Patent number: 8753989Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.Type: GrantFiled: February 2, 2012Date of Patent: June 17, 2014Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Michael S. Cox, Li-Qun Xia, Mei-Yee Shek, Jia Lee, Vladimir Zubkov, Tzu-Fang Huang, Rongping Wang, Isabelita Roflox, Hichem M'Saad
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Patent number: 8728918Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.Type: GrantFiled: October 19, 2012Date of Patent: May 20, 2014Assignee: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Zheng Yuan, Rongping Wang, Alan Tso
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Publication number: 20130050892Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: ApplicationFiled: October 29, 2012Publication date: February 28, 2013Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
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Patent number: 8303763Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: GrantFiled: April 25, 2012Date of Patent: November 6, 2012Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo