Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.

Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.

Abstract: Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract: A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.