Patents by Inventor Ru-Ying Huang
Ru-Ying Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996368Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: GrantFiled: June 23, 2023Date of Patent: May 28, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Publication number: 20230343719Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: ApplicationFiled: June 23, 2023Publication date: October 26, 2023Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Patent number: 11728279Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: GrantFiled: January 12, 2022Date of Patent: August 15, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Publication number: 20220139838Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: ApplicationFiled: January 12, 2022Publication date: May 5, 2022Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Patent number: 11227836Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: GrantFiled: January 28, 2019Date of Patent: January 18, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Publication number: 20200126920Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.Type: ApplicationFiled: January 28, 2019Publication date: April 23, 2020Inventors: Ru-Ying Huang, Yung-Ching Chen, Yueh-Chiou Lin, Yian-Liang Kuo
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Patent number: 10453818Abstract: A chip includes a first group of dummy bumps disposed at a top surface of the chip in a first corner of the chip, a second group of dummy bumps disposed at the top surface of the chip in a second corner of the chip, and active bump connectors disposed at the top surface of the chip. The chip also includes an outer seal ring disposed around a periphery of the chip, a first seal ring arrangement disposed around the first group of dummy bumps, and a second seal ring arrangement disposed around the second group of dummy bumps. The first seal ring arrangement and second seal ring arrangement are disposed in dielectric layers underlying the first and second groups of dummy bumps.Type: GrantFiled: January 26, 2018Date of Patent: October 22, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Chia-Wei Tu, Yian-Liang Kuo, Ru-Ying Huang
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Patent number: 10269750Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: GrantFiled: May 22, 2017Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Publication number: 20180151528Abstract: A chip includes a first group of dummy bumps disposed at a top surface of the chip in a first corner of the chip, a second group of dummy bumps disposed at the top surface of the chip in a second corner of the chip, and active bump connectors disposed at the top surface of the chip. The chip also includes an outer seal ring disposed around a periphery of the chip, a first seal ring arrangement disposed around the first group of dummy bumps, and a second seal ring arrangement disposed around the second group of dummy bumps. The first seal ring arrangement and second seal ring arrangement are disposed in dielectric layers underlying the first and second groups of dummy bumps.Type: ApplicationFiled: January 26, 2018Publication date: May 31, 2018Inventors: Tsung-Fu Tsai, Chia-Wei Tu, Yian-Liang Kuo, Ru-Ying Huang
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Publication number: 20170256512Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: ApplicationFiled: May 22, 2017Publication date: September 7, 2017Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Patent number: 9659890Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: GrantFiled: September 14, 2015Date of Patent: May 23, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Patent number: 9607936Abstract: An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a semiconductor substrate, and a copper bump over the semiconductor substrate. The second work piece includes a bond pad. A solder is between and adjoining the first work piece and the second work piece, wherein the solder electrically connects the copper bump to the bond pad. The solder includes palladium.Type: GrantFiled: November 16, 2009Date of Patent: March 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Wen Hsiao, Jiun Yi Wu, Ru-Ying Huang, Chen-Shien Chen
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Publication number: 20160005704Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: ApplicationFiled: September 14, 2015Publication date: January 7, 2016Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Patent number: 9136235Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: GrantFiled: October 28, 2013Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Patent number: 8847387Abstract: An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 ?m.Type: GrantFiled: July 23, 2010Date of Patent: September 30, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Wen Hsiao, Yao-Chun Chuang, Chen-Shien Chen, Chen-Cheng Kuo, Ru-Ying Huang
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Patent number: 8569886Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: GrantFiled: November 22, 2011Date of Patent: October 29, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Publication number: 20130127052Abstract: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Tu, Yian-Liang Kuo, Tsung-Fu Tsai, Ru-Ying Huang, Ming-Song Sheu, Hsien-Wei Chen
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Publication number: 20130087925Abstract: A chip includes a dummy connector disposed at a top surface of the chip. A seal ring encircles a region directly underlying the dummy connector, with the region overlapping the dummy connector.Type: ApplicationFiled: October 5, 2011Publication date: April 11, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Chia-Wei Tu, Yian-Liang Kuo, Ru-Ying Huang
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Publication number: 20110101526Abstract: An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a semiconductor substrate, and a copper bump over the semiconductor substrate. The second work piece includes a bond pad. A solder is between and adjoining the first work piece and the second work piece, wherein the solder electrically connects the copper bump to the bond pad. The solder includes palladium.Type: ApplicationFiled: November 16, 2009Publication date: May 5, 2011Inventors: Ching-Wen Hsiao, Jiun Yi Wu, Ru-Ying Huang, Chen-Shien Chen
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Publication number: 20110101519Abstract: An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 ?m.Type: ApplicationFiled: July 23, 2010Publication date: May 5, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Wen Hsiao, Yao-Chun Chuang, Chen-Shien Chen, Chen-Cheng Kuo, Ru-Ying Huang