Abstract: A system and method for producing a medical bag with an HF welder that uses upper and lower dies each having a plurality of electrode lamellae arranged such that they are alternatingly polarized relative to adjacent lamellae and opposing lamellae. Interspersed dielectric materials may be used to impart contours onto the film material to produce a patterned bag.

Abstract: The invention relates to various aspects of HF-welding methods and HF welding equipment and to a bag produced with an HF-welding method. In tools used for HF welding, it is proposed that the tool is supplemented by an electrically conductive layer, which among other advantages enables the quality of a welded connection, in particular of especially thin films, to be significantly improved.

Abstract: A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.

Abstract: The present invention provides SERF2, a nucleic acid encoding said SERF2 or a cell expressing SERF2 for use as a medicament, in particular for use for use in treating or preventing an atrophy disease or condition or for increasing cellular growth in a patient such as sarcopenia, cachexia, dystrophy, hypoplasia, hypotonia, or muscle loss, as well as in vitro methods suitable for cell culture proliferation and pharmaceutical compositions.

Abstract: The present invention provides SERF2, a nucleic acid encoding said SERF2 or a cell expressing SERF2 for use as a medicament, in particular for use for use in treating or preventing an atrophy disease or condition or for increasing cellular growth in a patient such as sarcopenia, cachexia, dystrophy, hypoplasia, hypotonia, or muscle loss, as well as in vitro methods suitable for cell culture proliferation and pharmaceutical compositions.

Abstract: A method for forming a semiconductor device comprises forming an amorphous or polycrystalline semiconductor layer adjacently to at least one semiconductor doping region having a first conductivity type located in a semiconductor substrate. The method further comprises incorporating dopants into the amorphous or polycrystalline semiconductor layer during or after forming the amorphous or polycrystalline semiconductor layer. The method further comprises annealing the amorphous or polycrystalline semiconductor layer to transform at least a part of the amorphous or polycrystalline semiconductor layer into a substantially monocrystalline semiconductor layer and to form at least one doping region having the second conductivity type in the monocrystalline semiconductor layer, such that a p-n junction is formed between the at least one semiconductor doping region having the first conductivity type and the at least one doping region having the second conductivity type.

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10?4 mg/cm2 to 0.1 mg/cm2.

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10?4 mg/cm2 to 0.1 mg/cm2.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract: A percussion tool has a cooling air channel for guiding a cooling air flow from a cooling air fan to an outside wall of a cylinder of an internal combustion engine. The cooling air channel is tapered to the extent that partial cooling air flows guided between the respective cooling fins are branched off the main cooling air flow. In such a way, the flow rate of the cooling air flow in the cooling air channel remains substantially constant, resulting in optimized engine cooling. The cooling air channel may be divided into two cooling air channels downstream of the cylinder. One of the cooling air channels guides cooling air to an exhaust gas system of the internal combustion engine, while the other cooling air channel guides cooling air to an outside wall of the guide housing of a hammer mechanism.

Abstract: The invention relates to a percussion tool having an internal combustion engine and a hammer mechanism that can be driven by the internal combustion engine by means of a transmission. A part of the engine housing, the transmission housing, or the impact hammer mechanism housing is enclosed by a cover. The cover is spaced at a distance from the remainder of the machine, so that a gap is present between the cover and the remainder of the machine. Cooling air can flow into the gap at the lower face of the cover and flow back out via a flue and an opening. The components beneath the cover are thereby effectively cooled, even without an additional cooling air blower.

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.