Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: The invention relates to a percussion tool having an internal combustion engine and a hammer mechanism that can be driven by the internal combustion engine by means of a transmission. A part of the engine housing, the transmission housing, or the impact hammer mechanism housing is enclosed by a cover. The cover is spaced at a distance from the remainder of the machine, so that a gap is present between the cover and the remainder of the machine. Cooling air can flow into the gap at the lower face of the cover and flow back out via a flue and an opening. The components beneath the cover are thereby effectively cooled, even without an additional cooling air blower.

Abstract: A percussion tool has a cooling air channel for guiding a cooling air flow from a cooling air fan to an outside wall of a cylinder of an internal combustion engine. The cooling air channel is tapered to the extent that partial cooling air flows guided between the respective cooling fins are branched off the main cooling air flow. In such a way, the flow rate of the cooling air flow in the cooling air channel remains substantially constant, resulting in optimized engine cooling. The cooling air channel may be divided into two cooling air channels downstream of the cylinder. One of the cooling air channels guides cooling air to an exhaust gas system of the internal combustion engine, while the other cooling air channel guides cooling air to an outside wall of the guide housing of a hammer mechanism.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: A drilling and/or percussive hammer comprises a handle and a hammer housing, which can move relative to the handle and inside of which, among other things, a pneumatic spring percussive mechanism is housed. The pneumatic spring of the pneumatic spring percussive mechanism can be ventilated via a no-load operation duct that is opened and closed by a valve. The valve can be opened and closed according to a pressing force acting upon the handle. A delay device controls the valve during closing so that the valve reaches the position corresponding to the detected pressing force only with a time delay. This causes a smooth transition from the no-load operation to the percussive operation.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer.

Abstract: Disclosed is a drilling and/or striking hammer that includes a lubricating device having a lubricant reservoir and a volume of lubricant contained therein. The lubricating device conveys lubricant to at least one a transmission system within the hammer's housing, a percussion system, and/or a tool holder at a variable dosing or flow rate. The dosing or flow rate varies as a function of tool stress which can include use intensity and/or temperature. A flexible tube extends between the reservoir and the lubricated component(s). At lease part of the flexible tube vibrates with the lubricated components during use and modifies a viscosity of the lubricant therein, based on tool use intensity. A pressure generating device can pressurize the lubricant, helping convey the lubricant to a targeted area for lubricating movable parts.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: A percussion mechanism that has a motor, a drive piston which can be moved to and fro in a guide cylinder by the motor, and a percussion piston. A coupling device is active between the drive piston and the percussion piston, via which coupling device the movement of the drive piston is transmitted to the percussion piston. The motor can be configured as a reluctance motor or as a synchronous motor. The motor can be actuable in such a way that different rotational speeds of the rotor can be generated within a percussion cycle and/or from percussion cycle to percussion cycle.

Abstract: A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.

Abstract: One or more embodiments relate to a method for making a capacitor such as a trench capacitor. The method includes: providing a substrate; forming an opening within the substrate; forming a sidewall spacer over a sidewall surface of the opening; forming a first conductive layer within the opening after forming the sidewall spacer; removing the sidewall spacer; forming a dielectric layer over the first conductive layer within the opening; and forming a second conductive layer over the dielectric layer within the opening.

Abstract: A percussive mechanism, which is provided in the form of an, e.g. pneumatic spring percussive mechanism, comprises an electrodynamic linear drive, a drive piston, which can be reciprocally moved inside a percussive mechanism housing by the linear drive, and a percussive piston. An additional hollow space is provided in front of and/or behind the drive piston and can be isolated at least in part from the surrounding area so that a pneumatic spring can be created in the additional hollow space. The pneumatic spring slows the drive piston at its returning points and facilitates a returning motion without loading the electrodynamic linear drive.