Abstract: A process of forming a treated clay composition, a process of decaffeination, and a treated clay composition are disclosed. The process of forming the treated clay composition includes providing a first solution of caffeine molecules and non-caffeine molecules, extracting the caffeine molecules to form a pretreatment solution, and bringing a clay composition into contact with the pretreatment solution to form the treated clay composition, on which at least one of the non-caffeine molecules is adsorbed. The process of decaffeination includes providing a solution of caffeine and non-caffeine molecules, and bringing the solution into contact with a treated clay composition. The treated clay composition includes organic molecules adsorbed on mineral layers of a clay. The organic molecules are non-caffeine molecules from a pretreatment solution.

Abstract: Materials and methods for preparing a payload-containing microcapsule with walls that have hexahydrotriazine (HT) and/or hemiaminal (HA) structures are disclosed. To an HT small molecule or a HA small molecule, or a combination thereof, in a solvent is added a cross-linking agent, NH4Cl, and a copolymer. The solution is acidified, and a payload agent is added. The HT small molecule and HA small molecule may have orthogonal functionality.

Abstract: Interconnect structures with selective barrier for back-end-of-line (BEOL) applications are provided. In one aspect, an interconnect structure includes: a dielectric disposed over at least one metal line; at least one feature present in the dielectric over the at least one metal line; a barrier layer lining only surfaces of the dielectric within the at least one feature; at least one interconnect present in the at least one feature over the barrier layer, wherein the at least one interconnect is in direct contact with the at least one feature. A method of forming an interconnect structure is also provided.

Abstract: A patterning method is described that utilizes self-assembled monolayers (SAMs) formed with hydroxamic acid compounds and area selective atomic layer deposition (ALD). In the examples, regions of the SAM exposed to extreme ultraviolet radiation (EUV) become resistant to ALD deposition. Subsequent treatment of the exposed SAM to an ALD process results in selective growth of an ALD film on the non-exposed regions of the SAM, leaving the exposed regions substantially free of ALD material.

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Abstract: A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Abstract: Embodiments of the invention are directed to a macromolecular chemotherapeutic. A non-limiting example of the macromolecular chemotherapeutic includes a block copolymer. The block copolymer can include a water-soluble block, a cationic block, and a linker, wherein the linker is connected to the water-soluble bock and the charged block.

Abstract: In an embodiment, a polymeric material includes a plurality of hemiaminal units bonded together by a first linkage and a second linkage, wherein the first linkage is thermally stable and resistant to bases and the second linkage is thermally degradable and degradable by a base. In another embodiment, a method of forming nanoporous materials includes forming a polymer network with a chemically removable portion. The chemically removable portion may be polycarbonate polymer that is removable on application of heat or exposure to a base, or a polyhexahydrotriazine (PHT) or polyhemiaminal (PHA) polymer that is removable on exposure to an acid. Removing any portion of the polymer results in formation of nanoscopic pores as polymer chains are decomposed, leaving pores in the polymer matrix.

Abstract: Antibacterial coatings and methods of making the antibacterial coatings are described herein. In particular, a method for forming an organocatalyzed polythioether coating is provided in which a first solution including a bis-silylated dithiol and a fluoroarene is prepared. A second solution including an organocatalyst is prepared. The first solution and the second solution are mixed to form a mixed solution. The mixed solution is applied to a substrate, and the substrate is cured.

Abstract: This disclosure describes new compositions and methods related to photoresponsive poly(hexahydrotriazines) and related polymers. In an embodiment, a method of patterning a substrate includes forming a liquid poly(hemiaminal) material by a process that includes forming a reaction mixture comprising a polar solvent, paraformaldehyde, and an aminobenzene compound having photoreactive groups, and heating the reaction mixture at a temperature up to 50° C. The method further includes applying the liquid poly(hemiaminal) material to a substrate; patterning the liquid poly(hemiaminal) material with UV light; and curing the liquid poly(hemiaminal) material to form a cured poly(hexahydrotriazine) polymer.

Abstract: A stimulus-responsive micellar carrier, methods that may be associated with making a stimulus-responsive micellar carrier, and methods that may be associated with using a stimulus-responsive micellar carrier are disclosed. The stimulus-responsive micellar carrier comprises a cargo molecule, and a linear block copolymer having a hydrophilic block connected to a hydrophobic block by a stimulus-responsive junction moiety. The micellar carrier can be supplied to a patient body for therapeutic purposes, such as the treatment of cancerous tissue. A method of preparing or obtaining a stimulus-responsive micellar carrier may include preparing a polyethylene glycol material having an acetal end group and then preparing a block copolymer by forming a reaction mixture including the polyethylene glycol material, a cyclic carbonate monomer, and a base.

Abstract: Polyhemiaminal (PHA) and polyhexahydrotriazine (PHT) materials are modified by 1,4 conjugate addition chemical reactions to produce a variety of molecular architectures comprising pendant groups and bridging segments. The materials are formed by a method that includes heating a mixture comprising solvent(s), paraformaldehyde, aromatic amine groups, aliphatic amine Michael donors, and Michael acceptors, such as acrylates. The reaction mixtures may be used to prepare polymer pre-impregnated materials and composites containing PHT matrix resin.

Abstract: A semiconductor structure includes a semiconductor substrate and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack includes a resist layer formed over one or more additional layers. The semiconductor structure further includes a metal-containing top coat formed over the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: A stimulus-responsive micellar carrier, methods that may be associated with making a stimulus-responsive micellar carrier, and methods that may be associated with using a stimulus-responsive micellar carrier are disclosed. The stimulus-responsive micellar carrier comprises a cargo molecule, and a linear block copolymer having a hydrophilic block connected to a hydrophobic block by a stimulus-responsive junction moiety. The micellar carrier can be supplied to a patient body for therapeutic purposes, such as the treatment of cancerous tissue. A method of preparing or obtaining a stimulus-responsive micellar carrier may include preparing a polyethylene glycol material having an acetal end group and then preparing a block copolymer by forming a reaction mixture including the polyethylene glycol material, a cyclic carbonate monomer, and a base.

Abstract: Silica-based organogels, including aerogels, incorporating hexahydrotriazine and/or hemiaminal species are described. These organo-silica gel materials can have applications as insulating materials. In a particular example, an aerogel includes silica groups and a hexahydrotriazine moiety with at least one nitrogen atom that is covalently linked to a silica group. Methods of making such silica-based organogels are also described.

Abstract: In some embodiments, a product, such as a thermoset, has a polyhexahydrotriazine and a self-polymerized cross-linkable polymer. In some embodiments, a product is the reaction product of a diamine, an aldehyde, and a compound having an ?,?-unsaturated electron withdrawing moiety.

Abstract: A method is described for selectively forming alumina film layers on a silicon oxide surface by atomic layer deposition (ALD) in the presence of a metal-containing surface when each surface is exposed to the ALD reactants (i.e., a blocking layer is not used to prevent ALD reactants from contacting the metal-containing layer). Also described are methods of determining conditions for area-selective atomic layer deposition (AS-ALD) on a substrate containing two or more different surface materials using a database of ALD reactions.

Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.