Abstract: Antennas (100, 1000, 1600, 1800, 1900) or other radio frequency components that include an electrically configurable anisotropic element (112, 1502, 1608, 1806) are provided. According to certain embodiments the electrical configurable anisotropic element (112, 1502, 1608, 1806, 1904, 1906, 1918, 1920, 1922) includes a material (202, 1912, 1924) including carbon nanotubes or conductive nano-tubes or nano-wires (208) dispersed in a liquid crystal material or other medium with that can be aligned by an applied field.

Abstract: A one-dimensional nanostructure multi-port coupler (100, 300, 400, 600) is provided for use in an RF device (700). The coupler (100, 300, 400, 600) includes a first plurality of one-dimensional nanostructures (102) aligned substantially in a first direction (110) and coupled between the input (103) and first output (103?), and a second plurality of one-dimensional nanostructures (104) substantially aligned in a second direction (112), coupled to a second output (105), and disposed contiguous to the first plurality of one-dimensional nanostructures (102). The first and second plurality of one-dimensional nanostructures (102, 104) may comprise first and second contiguous planes. The amount of RF energy coupled may be controlled by varying the width, density, diameter, and type of one of the plurality of one-dimensional nanostructures (102, 104) versus the other.

Abstract: A one-dimensional nanostructure multi-port coupler (100, 300, 400, 600) is provided for use in an RF device (700). The coupler (100, 300, 400, 600) includes a first plurality of one-dimensional nanostructures (102) aligned substantially in a first direction (110) and coupled between the input (103) and first output (103?), and a second plurality of one-dimensional nanostructures (104) substantially aligned in a second direction (112), coupled to a second output (105), and disposed contiguous to the first plurality of one-dimensional nanostructures (102). The first and second plurality of one-dimensional nanostructures (102, 104) may comprise first and second contiguous planes. The amount of RF energy coupled may be controlled by varying the width, density, diameter, and type of one of the plurality of one-dimensional nanostructures (102, 104) versus the other.

Abstract: Antennas (100, 1000, 1600, 1800, 1900) or other radio frequency components that include an electrically configurable anisotropic element (112, 1502, 1608, 1806) are provided. According to certain embodiments the electrical configurable anisotropic element (112, 1502, 1608, 1806, 1904, 1906, 1918, 1920, 1922) includes a material (202, 1912, 1924) including carbon nanotubes or conductive nano-tubes or nano-wires (208) dispersed in a liquid crystal material or other medium with that can be aligned by an applied field.

Abstract: An uncorrelated RF antenna system (100) having uncorrelated antennas (102, 104) disposed in close relationship for use with mobile communication device transmitters and/or receivers (300). A first antenna (102) comprises a first plurality of elongated nanostructures (106) aligned in a first direction (110), and a second antenna (104) spatially disposed from the first antenna (102) comprises a second plurality of elongated nanostructures (108) aligned in a second direction (112) substantially orthogonal to the first direction (110). When a signal is received, an E polarization is created in the first antenna (102) orthogonal to an E polarization created in the second antenna (104).

Abstract: A device (10) is provided for matching the CTE between substrates (12, 14), e.g., a semiconductor substrate and packaging material. The first substrate (12) has a first coefficient of thermal expansion and the second substrate (14) has a second coefficient of thermal expansion. At least two layers (16) of liquid crystal polymer are formed between the first substrate (12) and the second substrate (14), each layer having a unique coefficient of thermal expansion progressively higher in magnitude from the first substrate (12) to the second substrate (14).

Abstract: An antenna system (205) includes an antenna structure (215), a receiver (220), and an antenna system controller (225). The antenna structure includes an arrangement of antennas (237), a signal combiner (240), and a switching matrix (235). The arrangement of antennas is designed to have a set of antenna element separations that are optimized to provide lowest correlation coefficients of intercepted radio signals for a corresponding set of electromagnetic environment types that vary from a very low density scattering environment to a maximum density scattering environment. The antennas (230), (231), (232), (233), (234) in the antenna arrangement each include at least one element that has a common polarization. There is at least one antenna that is a dual polarized antenna. The antenna system selects an antenna element pair that corresponds to the environment type which it is operating and thereby receives a best combined signal.

Abstract: A packaging structure (10) is provided having a hermetic sealed cavity for microelectronic applications. The packaging structure (10) comprises first and second packaging layers (12, 28) forming a cavity. Two liquid crystal polymer (LCP) layers (16, 22) are formed between and hermetically seal the first and second packaging layers (12, 28). First and second conductive strips (18, 20) are formed between the LCP layers (16, 22) and extend into the cavity. An electronic device (24) is positioned within the cavity and is coupled to the first and second conductive strips (18, 20).

Abstract: An improved transceiver assembly for a vehicle for detecting potentially hazardous objects is disclosed. The transceiver assembly preferably comprises a patch array feed antenna having an array of a plurality of patches for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that moves to sweeps the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna.

Abstract: In one embodiment, an improved transceiver assembly for a vehicle capable of detecting potentially hazardous objects is disclosed. The transceiver assembly comprises a tapered slot feed antenna for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that oscillates to sweep the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna. The antenna is preferably formed on a printed circuit board (PCB) (substrate), which can include additional circuitry necessary to operate the antenna, and which is preferably mounted at an acute angle with respect to the housing to direct the beam at the parabolic dish.

Abstract: According to the most preferred embodiments of the present invention, at least one of the two plates of a capacitor is formed in at least two different layers of an integrated circuit. The methods of the present invention uses “air bridges” or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

Abstract: A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Abstract: According to the most preferred embodiments of the present invention, at least one of the two plates of a capacitor is formed in at least two different layers of an integrated circuit. The methods of the present invention uses “air bridges” or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

Abstract: A monolithically integrable spiral balun comprises a substrate having first, second, third, and fourth transmission lines formed thereon. The first transmission line has a first end coupled to receive an input signal and has a second end. The first transmission line forms a spiral that winds in a first direction from its first end to its second end. The second transmission line has a first end and has a second end electrically coupled to the second end of the first transmission line. The second transmission line forms a second spiral that winds in a second direction from its first end to its second end. The third transmission line has a first end for providing a first output and a second end for coupling to a first potential. The third transmission line forms a third spiral that interleaves the first spiral and winds in the second direction from its first end to its second end. A fourth transmission line has a first end for providing a second output and a second end for coupling to a second potential.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure.

Abstract: A monolithically integrable spiral balun comprises a substrate having first, second, third, and fourth transmission lines formed thereon. The first transmission line has a first end coupled to receive an input signal and has a second end. The first transmission line forms a spiral that winds in a first direction from its first end to its second end. The second transmission line has a first end and has a second end electrically coupled to the second end of the first transmission line. The second transmission line forms a second spiral that winds in a second direction from its first end to its second end. The third transmission line has a first end for providing a first output and a second end for coupling to a first potential. The third transmission line forms a third spiral that interleaves the first spiral and winds in the second direction from its first end to its second end. A fourth transmission line has a first end for providing a second output and a second end for coupling to a second potential.

Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

Abstract: Various semiconductor device structures that include one or more capacitors can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract: A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.