Abstract: Various semiconductor device structures that include an inductor or balun can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract: A semiconductor structure includes a monocrystalline silicon substrate, a buffer layer including an amorphous oxide material overlying the monocrystalline silicon substrate and a monocrystalline perovskite oxide material overlying the amorphous oxide material and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. The semiconductor structure further includes power amplifier and associated linearization circuit for the power amplifier.

Abstract: A photonic biasing and solar charging network is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of solar cells, light sources and optical interconnects to be placed on the same substrate as the active device. By coupling the solar cells to the active device to provide bias voltages, transmission line effects and multiple input/output pads necessary for traditional DC biasing can be eliminated. Additionally, the photonic biasing network can be additionally utilized as a solar charging network for trickle charging batteries.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure.

Abstract: Controlling and controlled components are integrated on a monolithic device. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.

Abstract: Phased array components utilizing two or more different types of semiconductor in one monolithic device are provided. High quality epitaxil layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

Abstract: A semiconductor structure for integrated control of an active subcircuit includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, the active subcircuit in the monocrystalline compound semiconductor material, and a bias subcircuit in the monocrystalline silicon substrate and electrically coupled to the active subcircuit to bias the active subcircuit.

Abstract: An integrated light source for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source on a monocrystalline compound semiconductor material and control circuitry for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.

Abstract: A semiconductor structure with selective doping includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, at least one monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a transistor in the at least one monocrystalline compound semiconductor material and including active regions having different conductivity levels under substantially identical bias conditions.

Abstract: Power combining amplifiers using two different monocrystalline materials in a monolithic device are provided. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: An optically tuned transistor network is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of complementary metal oxide semiconductors along with light sources such as vertical cavity surface emitting lasers in one integrated circuit. By coupling the light source to active devices fabricated on the same substrate and coupling them with optical interconnects, light can be illuminated on the active regions of the active devices to tune various performance characteristics of the active device.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A thermo-electric device is integrated into the semiconductor structure.

Abstract: A semiconductor structure for spacial power combining includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, a first amplifier in the monocrystalline compound semiconductor material, and a first control circuit in the monocrystalline silicon substrate and electrically coupled to the first amplifier.

Abstract: Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide or an amorphous layer formed from a monocrystalline precursor. The device (300) includes passive components (314) formed away from the substrate (302), to minimize adverse signal interaction between passive component (314) signals and the substrate (302).