Patents by Inventor Ryo Tokumaru
Ryo Tokumaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10553704Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.Type: GrantFiled: July 18, 2018Date of Patent: February 4, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
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Patent number: 10290745Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.Type: GrantFiled: June 26, 2017Date of Patent: May 14, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Akihisa Shimomura, Yasumasa Yamane, Ryo Tokumaru, Yuhei Sato, Kazuhiro Tsutsui
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Publication number: 20190139783Abstract: A semiconductor device having high reliability is provided.Type: ApplicationFiled: April 11, 2017Publication date: May 9, 2019Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Kazutaka KURIKI, Yuji EGI, Noritaka ISHIHARA, Yusuke NONAKA, Yasumasa YAMANE, Ryo TOKUMARU, Daisuke MATSUBAYASHI
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Patent number: 10236357Abstract: A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.Type: GrantFiled: September 7, 2017Date of Patent: March 19, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasumasa Yamane, Ryo Tokumaru, Hiromi Sawai
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Publication number: 20180342601Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.Type: ApplicationFiled: July 18, 2018Publication date: November 29, 2018Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
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Patent number: 10141344Abstract: A semiconductor device having favorable electric characteristics is provided. The semiconductor device includes a first transistor and second transistor. The first transistor includes a first conductor over a substrate; a first insulator thereover; a first oxide thereover; a second insulator over thereover; a second conductor including a side surface substantially aligned with a side surface of the second insulator and being over the second insulator; a third insulator including a side surface substantially aligned with a side surface of the second conductor and being over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the first oxide and the fourth insulator.Type: GrantFiled: November 14, 2017Date of Patent: November 27, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kiyoshi Kato, Yuta Endo, Ryo Tokumaru
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Patent number: 10050132Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.Type: GrantFiled: July 31, 2017Date of Patent: August 14, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yasumasa Yamane, Yuhei Sato, Tetsuhiro Tanaka, Masashi Tsubuku, Toshihiko Takeuchi, Ryo Tokumaru, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Toshiya Endo
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Patent number: 10032918Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film.Type: GrantFiled: April 17, 2017Date of Patent: July 24, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Daisuke Matsubayashi, Ryo Tokumaru, Yasumasa Yamane, Kiyofumi Ogino, Taichi Endo, Hajime Kimura
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Patent number: 10032888Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.Type: GrantFiled: August 18, 2015Date of Patent: July 24, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
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Publication number: 20180138212Abstract: A semiconductor device having favorable electric characteristics is provided. The semiconductor device includes a first transistor and second transistor. The first transistor includes a first conductor over a substrate; a first insulator thereover; a first oxide thereover; a second insulator over thereover; a second conductor including a side surface substantially aligned with a side surface of the second insulator and being over the second insulator; a third insulator including a side surface substantially aligned with a side surface of the second conductor and being over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the first oxide and the fourth insulator.Type: ApplicationFiled: November 14, 2017Publication date: May 17, 2018Inventors: Shunpei YAMAZAKI, Kiyoshi KATO, Yuta ENDO, Ryo TOKUMARU
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Publication number: 20180076296Abstract: A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.Type: ApplicationFiled: September 7, 2017Publication date: March 15, 2018Inventors: Yasumasa YAMANE, Ryo TOKUMARU, Hiromi SAWAI
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Publication number: 20170352746Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.Type: ApplicationFiled: July 31, 2017Publication date: December 7, 2017Inventors: Shunpei YAMAZAKI, Akihisa SHIMOMURA, Yasumasa YAMANE, Yuhei SATO, Tetsuhiro TANAKA, Masashi TSUBUKU, Toshihiko TAKEUCHI, Ryo TOKUMARU, Mitsuhiro ICHIJO, Satoshi TORIUMI, Takashi OHTSUKI, Toshiya ENDO
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Patent number: 9831326Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.Type: GrantFiled: November 14, 2016Date of Patent: November 28, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Masayuki Sakakura, Ryo Tokumaru, Yasumasa Yamane, Yuhei Sato
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Patent number: 9806200Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a first insulator, a second insulator, a semiconductor, and a conductor. The semiconductor is over the first insulator. The second insulator is over the semiconductor. The conductor is over the second insulator. The semiconductor includes a first region, a second region, and a third region. The first region is a region where the semiconductor overlaps with the conductor. Each of the second region and the third region is a region where the semiconductor does not overlap with the conductor. The second region and the third region each have a region with a spinel crystal structure.Type: GrantFiled: March 22, 2016Date of Patent: October 31, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Tetsuhiro Tanaka, Masayuki Kimura, Ryo Tokumaru, Daisuke Matsubayashi, Yasumasa Yamane
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Publication number: 20170309752Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film.Type: ApplicationFiled: April 17, 2017Publication date: October 26, 2017Inventors: Shunpei YAMAZAKI, Daisuke MATSUBAYASHI, Ryo TOKUMARU, Yasumasa YAMANE, Kiyofumi OGINO, Taichi ENDO, Hajime KIMURA
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Publication number: 20170294542Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.Type: ApplicationFiled: June 26, 2017Publication date: October 12, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Tetsuhiro TANAKA, Akihisa SHIMOMURA, Yasumasa YAMANE, Ryo TOKUMARU, Yuhei SATO, Kazuhiro TSUTSUI
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Patent number: 9722056Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.Type: GrantFiled: September 27, 2016Date of Patent: August 1, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yasumasa Yamane, Yuhei Sato, Tetsuhiro Tanaka, Masashi Tsubuku, Toshihiko Takeuchi, Ryo Tokumaru, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Toshiya Endo
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Patent number: 9698277Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.Type: GrantFiled: December 9, 2015Date of Patent: July 4, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Akihisa Shimomura, Yasumasa Yamane, Ryo Tokumaru, Yuhei Sato, Kazuhiro Tsutsui
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Patent number: 9653613Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.Type: GrantFiled: February 19, 2016Date of Patent: May 16, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Akihisa Shimomura, Ryo Tokumaru, Yasumasa Yamane, Yuhei Sato, Naoki Okuno, Motoki Nakashima
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Publication number: 20170125553Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.Type: ApplicationFiled: November 14, 2016Publication date: May 4, 2017Inventors: Shunpei YAMAZAKI, Tetsuhiro TANAKA, Masayuki SAKAKURA, Ryo TOKUMARU, Yasumasa YAMANE, Yuhei SATO