Abstract: An object of the present invention is to provide a method for manufacturing a display device by improving the utilization efficiency of materials and simplifying manufacturing process. Another object of the invention is to provide a technique for forming a pattern such as a wiring having a predetermined shape included in a display device with good controllability. A method for manufacturing a wiring substrate of the invention includes the steps of: forming a first region having a subject material; modifying the surface of the subject material partly to form a second region having a boundary with respect to the first region; continuously discharging a composition containing a conductive material to a part of the first region across the boundary and the second region; solidifying the composition to form a conductive layer; and removing the conductive layer formed in a part of the first region across the boundary.

Abstract: A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

Abstract: An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

Abstract: A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

Abstract: A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

Abstract: A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

Abstract: An object of the present invention is to provide a method for manufacturing a display device by improving the utilization efficiency of materials and simplifying manufacturing process. Another object of the invention is to provide a technique for forming a pattern such as a wiring having a predetermined shape included in a display device with good controllability. A method for manufacturing a wiring substrate of the invention includes the steps of: forming a first region having a subject material; modifying the surface of the subject material partly to form a second region having a boundary with respect to the first region; continuously discharging a composition containing a conductive material to a part of the first region across the boundary and the second region; solidifying the composition to form a conductive layer; and removing the conductive layer formed in a part of the first region across the boundary.