Patents by Inventor Ryoichi Ohara
Ryoichi Ohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110193101Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: ApplicationFiled: February 4, 2011Publication date: August 11, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Naoko YANASE, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano
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Patent number: 7777592Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.Type: GrantFiled: March 22, 2007Date of Patent: August 17, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Michihiko Nishigaki, Ryoichi Ohara, Minoru Kawase, Kazuhiko Itaya
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Patent number: 7770274Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.Type: GrantFiled: November 29, 2007Date of Patent: August 10, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Kenya Sano, Ryoichi Ohara, Naoko Yanase, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo, Hiroshi Toyoda, Masahiko Hasunuma, Toshihiko Nagano, Kazuhide Abe, Michihiko Nishigaki, Hironobu Shibata
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Patent number: 7709999Abstract: A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.Type: GrantFiled: March 29, 2006Date of Patent: May 4, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiko Itaya, Ryoichi Ohara, Kenya Sano, Takaaki Yasumoto, Naoko Yanase
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Patent number: 7675222Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.Type: GrantFiled: July 23, 2007Date of Patent: March 9, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Takashi Kawakubo, Ryoichi Ohara, Tomio Ono, Toshihiko Nagano, Michihiko Nishigaki, Takaaki Yasumoto, Kazuhide Abe, Kenya Sano
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Publication number: 20090302716Abstract: A piezoelectric device which is a MEMS device is provided. In the device, the entire silicon layer of the SOI substrate is a p-type region. A plurality of n-type regions are formed in the silicon layer so as to be exposed to the upper surface of the silicon layer and spaced from each other. A piezoelectric film made of AlN is provided on the SOI substrate so as to contact the n-type region, and a conductor film made of aluminum is provided on the piezoelectric film. Thereby, the n-type region functions as a lower electrode and the conductor film functions as an upper electrode.Type: ApplicationFiled: June 8, 2009Publication date: December 10, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryoichi OHARA, Naoko YANASE, Takaaki YASUMOTO, Shingo MASUKO, Kenya SANO
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Patent number: 7560853Abstract: A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.Type: GrantFiled: February 16, 2007Date of Patent: July 14, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Kenya Sano, Kazuhiko Itaya, Ryoichi Ohara, Takashi Kawakubo
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Patent number: 7525399Abstract: A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.Type: GrantFiled: March 16, 2006Date of Patent: April 28, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Naoko Yanase, Kenya Sano, Takaaki Yasumoto, Ryoichi Ohara, Kazuhiko Itaya
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Patent number: 7501739Abstract: A thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.Type: GrantFiled: April 27, 2005Date of Patent: March 10, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiko Itaya, Takashi Kawakubo, Kenya Sano, Ryoichi Ohara
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Patent number: 7498904Abstract: A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.Type: GrantFiled: June 7, 2006Date of Patent: March 3, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Ryoichi Ohara, Naoko Yanase, Kenya Sano, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo
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Publication number: 20090033177Abstract: A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.Type: ApplicationFiled: March 29, 2006Publication date: February 5, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuhiko Itaya, Ryoichi Ohara, Kenya Sano, Takaaki Yasumoto, Naoko Yanase
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Patent number: 7463117Abstract: A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.Type: GrantFiled: June 30, 2005Date of Patent: December 9, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Ryoichi Ohara, Naoko Yanase, Kazuhiko Itaya, Kenya Sano, Takaaki Yasumoto, Kazuhide Abe, Toshihiko Nagano, Michihiko Nishigaki, Takashi Kawakubo
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Patent number: 7459833Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.Type: GrantFiled: February 10, 2005Date of Patent: December 2, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Takashi Kawakubo, Ryoichi Ohara, Tomio Ono, Toshihiko Nagano, Michihiko Nishigaki, Takaaki Yasumoto, Kazuhide Abe, Kenya Sano
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Publication number: 20080224253Abstract: A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.Type: ApplicationFiled: March 11, 2008Publication date: September 18, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshitomo SAGAE, Fumio Sasaki, Ryoichi Ohara
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Patent number: 7420320Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.Type: GrantFiled: November 29, 2007Date of Patent: September 2, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Kenya Sano, Ryoichi Ohara, Naoko Yanase, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo, Hiroshi Toyoda, Masahiko Hasunuma, Toshihiko Nagano, Kazuhide Abe, Michihiko Nishigaki, Hironobu Shibata
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Publication number: 20080074005Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.Type: ApplicationFiled: November 29, 2007Publication date: March 27, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kenya SANO, Ryoichi Ohara, Naoko Yanase, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo, Hiroshi Toyoda, Masahiko Hasunuma, Toshihiko Nagano, Kazuhide Abe, Michihiko Nishigaki, Hironobu Shibata
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Publication number: 20080072408Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.Type: ApplicationFiled: November 29, 2007Publication date: March 27, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kenya SANO, Ryoichi Ohara, Naoko Yanase, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo, Hiroshi Toyoda, Masahiko Hasunuma, Toshihiko Nagano, Kazuhide Abe, Michihiko Nishigaki, Hironobu Shibata
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Patent number: 7323805Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.Type: GrantFiled: January 27, 2005Date of Patent: January 29, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Kenya Sano, Ryoichi Ohara, Naoko Yanase, Takaaki Yasumoto, Kazuhiko Itaya, Takashi Kawakubo, Hiroshi Toyoda, Masahiko Hasunuma, Toshihiko Nagano, Kazuhide Abe, Michihiko Nishigaki, Hironobu Shibata
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Publication number: 20070284971Abstract: An electronic device includes: a lower electrode; a first piezoelectric film provided on the lower electrode; and an upper electrode provided on the first piezoelectric film. At least one of the lower electrode and the upper electrode is made of an alloy composed primarily of aluminum and doped with at least one element selected from the group consisting of Ni, Co, V, Ta, Mo, W, Ti, Y, and Nd. Alternatively, an electronic device includes: a support substrate; a lower electrode provided on the support substrate; a first piezoelectric film provided on the lower electrode; and an upper electrode provided on the first piezoelectric film. The lower electrode is made of an alloy composed primarily of aluminum and doped with at least one element selected from the group consisting of Ni, Co, V, Ta, Mo, W, Ti, Y, and Nd.Type: ApplicationFiled: June 12, 2007Publication date: December 13, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kenya SANO, Naoko Yanase, Ryoichi Ohara, Takaaki Yasumoto
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Publication number: 20070278900Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.Type: ApplicationFiled: July 23, 2007Publication date: December 6, 2007Applicant: Kabushiki Kaisha ToshibaInventors: Takashi KAWAKUBO, Ryoichi Ohara, Tomio Ono, Toshihiko Nagano, Michihiko Nishigaki, Takaaki Yasumoto, Kazuhide Abe, Kenya Sano