Abstract: An electronic device includes: a substrate; a first film provided on a major surface of the substrate; and a crystalline second film covering at least a part of the end surface and provided on the first film and the substrate. The end surface has an inclined surface which is inclined to the major surface of the substrate. The inclined surface has a curved surface whose slope becomes gentle with getting closer to the substrate.

Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

Abstract: A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

Abstract: A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.

Abstract: A film bulk acoustic resonator includes: a support substrate; and a laminated body provided on the support substrate, a portion of the laminated body being supported by the support substrate and another portion of the laminated body being spaced from the support substrate. The laminated body includes: a first electrode primarily composed of aluminum; a piezoelectric film laminated on the first electrode and primarily composed of aluminum nitride; and a second electrode laminated on the piezoelectric film. The second electrode is primarily composed of a metal having a density of 1.9 or more times the density of aluminum.

Abstract: It is possible to provide a resonator structure that does not cause a variation in anti-resonant frequency can be achieved, even if the cavity and the upper and lower electrode shift. A thin-film piezoelectric resonator includes: a lower electrode provided on the principal surface of the substrate so as to cover the cavity; a piezoelectric film provided on the lower electrode so as to be located above the cavity; and an upper electrode. The upper electrode includes: a main portion which overlaps a part of the cavity, a protruding portion connected to the main portion, an extension portion provided at the opposite side of the main portion. The length of the protruding portion in a direction perpendicular to a direction of connecting to the main portion is substantially the same as the length of the connecting portion in a direction perpendicular to a direction of connecting to the main portion.

Abstract: A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

Abstract: A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.

Abstract: A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.

Abstract: A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.

Abstract: A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.

Abstract: A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

Abstract: A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.

Abstract: A filter control apparatus which controls a frequency variable filter capable of changing a transmission band width by controlling a capacitance of at least a portion of a plurality of voltage variable capacitors connected in series and parallel to a resonator has an input unit, and a filter control circuit. The input unit inputs a reference signal with a predetermined reference frequency to the frequency variable filter. The filter control circuit controls a center frequency and the transmission band width of the frequency variable filter by detecting a phase change generated when the reference signal passes through the frequency variable filter and by variably controlling the capacitance of at least a portion of the voltage variable capacitor by using a direct voltage in proportion to the phase change.

Abstract: a thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.

Abstract: A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.

Abstract: A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonators connected in parallel. The resonance characteristic of at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonator connected in parallel is shifted by changing the voltage applied by the variable voltage circuit to change the pass characteristic of the filter.