Abstract: A plant-cultivating method is provided which comprises a red light irradiation step (A) and a blue light irradiation step (B), wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that the concentration of carbon dioxide in a cultivation atmosphere at the step (B) is higher than that at the step (A). Preferably the concentrations of carbon dioxide at the step (B) and the step (A) are 1000-2500 ppm and 700-1500 ppm, respectively. The concentration of carbon dioxide at the step (B) is preferably at least 200 ppm higher than that at the step (A).

Abstract: The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate (1) and a pn-junction type light-emitting unit (2) provided on the GaAs substrate (1), wherein light-emitting unit (2) is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3?X?0.7, 0.51?Y?0.54).

Abstract: A plant-cultivating method is provided which comprises a step (A) of irradiating a plant with a red light and a step (B) of irradiating a plant with a blue light, and a step (C) of irradiating a plant with a light predominantly comprised of far-red light wherein the step (A), the step (B) and the step (C) are independently and separately carried out for a predetermined period of time. The light irradiated at each of the steps (A), (B) and (C) has at least 60%, based on the total emission intensity of the light, of an emission intensity ratio of red light, blue light or far-red light.

Abstract: A multicolor light emitting diode lamp includes a blue LED and a AlGaInP-based red LED having high luminescence efficiency, balancing with the blue LED are mounted in the same package. The red LED includes a light emitting section including a light emitting layer having a composition formula, (AlXGa1-X)YIn1-YP (0?X?1 and 0<Y?1). The red LED emits at least as many photons as the blue LED when the same electric current is flowed. When a strong red light is desirable for plant growth, by mounting two red LEDs and one blue LED, a desired mixed color is obtained with one lamp, and irradiation of light can be made uniform.

Abstract: A plant-cultivating method is provided which comprises a step (A) of irradiating a plant with a red light and a step (B) of irradiating a plant with a blue light, wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that a fertilizer is used for each of the step (A) and the step (B), of which at least the fertilizer used for the step (A) is applied in the form of a nutritious liquid containing fertilizer ingredients and further carbon dioxide added therein. Preferably, a nutritious liquid is applied at each of the step (A) and the step (B), and the nutritious liquid applied at the step (A) contains carbon dioxide at a concentration higher than that in the nutritious liquid applied at the step (B).

Abstract: A plant-cultivating method is provided which comprises a red light irradiation step (A) and a blue light irradiation step (B), wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that a fertilizer is used at each of the step (A) and the step (B), of which at least the fertilizer used at the step (B) is applied in the form of a nutritious liquid containing fertilizer ingredients and further an increased amount of dissolved oxygen, which nutritious liquid is prepared by adding oxygen therein. Preferably, a nutritious liquid is applied at each of the step (A) and the step (B), and the nutritious liquid applied at the step (B) contains dissolved oxygen at a content higher than that in the nutritious liquid applied at the step (A).

Abstract: A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n?1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.

Abstract: A method for cultivating a fruit vegetable includes, a step that causes a flower bud differentiation by separately and independently carrying out a procedure to irradiate red light on a fruit vegetable sprout, and a procedure to irradiate blue light on the fruit vegetable sprout, and a step that irradiates light by a fluorescent lamp, or irradiates a sunbeam, or simultaneously irradiates red light and blue light on the flower bud differentiated fruit vegetable.

Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.

Abstract: A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0?X?0.1 and 0.39?Y?0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.

Abstract: A plant-cultivating method is provided which comprises a step (A) of irradiating a plant with a red light and a step (B) of irradiating a plant with a blue light, and a step (C) of irradiating a plant with a light predominantly comprised of far-red light wherein the step (A), the step (B) and the step (C) are independently and separately carried out for a predetermined period of time. The light irradiated at each of the steps (A), (B) and (C) has at least 60%, based on the total emission intensity of the light, of an emission intensity ratio of red light, blue light or far-red light.

Abstract: A plant-cultivating method is provided wherein a red light irradiation step (A) and a blue light irradiation step (B) are independently carried out for a predetermined time period, and far-red light is additionally irradiated concurrently with red light at step (A) or with blue light at step (B), or, with red light and blue light at step (A) and step (B), respectively. When far-red light is irradiated concurrently with red light at step (A), the emission intensity of red light is larger than that of far-red light, and an emission intensity ratio of red light to the total lights at step (A) is at least 50%. When far-red light is irradiated concurrently with blue light at step (B), the emission intensity of blue light is larger than that of far-red light, and an emission intensity ratio of blue light to the total lights at step (B) is at least 50%.

Abstract: A plant-cultivating method is provided which comprises a step (A) of irradiating a plant with a red light and a step (B) of irradiating a plant with a blue light, wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that a fertilizer is used for each of the step (A) and the step (B), of which at least the fertilizer used for the step (A) is applied in the form of a nutritious liquid containing fertilizer ingredients and further carbon dioxide added therein. Preferably, a nutritious liquid is applied at each of the step (A) and the step (B), and the nutritious liquid applied at the step (A) contains carbon dioxide at a concentration higher than that in the nutritious liquid applied at the step (B).

Abstract: A plant-cultivating method is provided which comprises a red light irradiation step (A) and a blue light irradiation step (B), wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that a fertilizer is used at each of the step (A) and the step (B), of which at least the fertilizer used at the step (B) is applied in the form of a nutritious liquid containing fertilizer ingredients and further an increased amount of dissolved oxygen, which nutritious liquid is prepared by adding oxygen therein. Preferably, a nutritious liquid is applied at each of the step (A) and the step (B), and the nutritious liquid applied at the step (B) contains dissolved oxygen at a content higher than that in the nutritious liquid applied at the step (A).

Abstract: A plant-cultivating method is provided which comprises a red light irradiation step (A) and a blue light irradiation step (B), wherein the step (A) and the step (B) are independently carried out for a predetermined period of time under cultivation conditions such that the concentration of carbon dioxide in a cultivation atmosphere at the step (B) is higher than that at the step (A). Preferably the concentrations of carbon dioxide at the step (B) and the step (A) are 1000-2500 ppm and 700-1500 ppm, respectively. The concentration of carbon dioxide at the step (B) is preferably at least 200 ppm higher than that at the step (A).

Abstract: Provided is a plant cultivation lamp used in a plant cultivation method including a step of independently performing a sequence of irradiating a plant with red light and a sequence of irradiating the plant with blue light within a certain period of time, including: a light irradiation unit that includes one or more red light emitting elements that emit red light and one or more blue light emitting elements that emit blue light; and a control unit that controls the light irradiation unit to independently turn on and off the red light emitting elements and the blue light emitting elements.

Abstract: A plant cultivation method is provided, including: a sequence of irradiating a plant with sunlight; a sequence of irradiating the plant with red light; and a sequence of irradiating the plant with blue light, in which the sequences are performed independently within a certain period of time. A plant cultivation apparatus is also provided, including: a region in which a plant is irradiated with sunlight; a light irradiation unit that irradiates the plant with artificial light including red light and/or blue light; and a control unit that controls the light irradiation unit to independently perform a step of irradiating a plant with red light and a step of irradiating the plant with blue light.

Abstract: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness.

Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.

Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0<2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X)Y1 In1-Y1 P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.