Patents by Inventor Ryouichi Takeuchi
Ryouichi Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20110133238Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.Type: ApplicationFiled: February 16, 2011Publication date: June 9, 2011Applicant: SHOWA DENKO K.K.Inventors: Wataru NABEKURA, Ryouichi Takeuchi
-
Patent number: 7915619Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.Type: GrantFiled: December 22, 2006Date of Patent: March 29, 2011Assignee: Showa Denko K.K.Inventors: Wataru Nabekura, Ryouichi Takeuchi
-
Publication number: 20110062413Abstract: A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.Type: ApplicationFiled: November 23, 2010Publication date: March 17, 2011Applicant: SHOWA DENKO K.K.Inventors: Ryouichi TAKEUCHI, Atsushi MATSUMURA, Takashi WATANABE
-
Publication number: 20110037087Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135) of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm?3 or less.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Applicant: SHOWA DENKO K.K.Inventors: Takashi WATANABE, Ryouichi TAKEUCHI
-
Patent number: 7863630Abstract: A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.Type: GrantFiled: July 5, 2006Date of Patent: January 4, 2011Assignee: Showa Denko K.K.Inventors: Ryouichi Takeuchi, Atsushi Matsumura, Takashi Watanabe
-
Publication number: 20100308365Abstract: Disclosed is a compound semiconductor light emitting diode 101 including: a device structure portion 10 formed on a transparent base portion 25, the device structure portion 10 including a compound semiconductor layer having a first conductivity type, a light emitting layer 13 made of mixed crystals of aluminum phosphide gallium indium (having a composition of (AlXGa1-X)0.5In0.5P; 0?X<1), and a compound semiconductor layer having a conductivity type opposite to the first conductivity type; and a first ohmic electrode 1 formed on the device structure portion 10, wherein the second ohmic electrode 5 is formed on the opposite side to the transparent base portion 25, the metal coating film 6 is formed to cover the second ohmic electrode 5, and a metallic pedestal portion 7 covering the metal coating film 6 is formed to electrically connect to the second ohmic electrode 5.Type: ApplicationFiled: February 6, 2009Publication date: December 9, 2010Applicant: SHOWA DENKO K.K.Inventors: Kyosuke Masuya, Ryouichi Takeuchi
-
Patent number: 7842966Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm?3 or less.Type: GrantFiled: July 5, 2006Date of Patent: November 30, 2010Assignee: Showa Denko K.K.Inventors: Takashi Watanabe, Ryouichi Takeuchi
-
Publication number: 20100258826Abstract: A light emitting diode (1) of the invention is provided with: a light emitting section (3) which includes a light emitting layer (2); a substrate (5) that is joined to the light emitting section (3) via a semiconductor layer (4); a first electrode (6) on an upper surface of the light emitting section (3); a second electrode (7) on a bottom surface of the substrate (5); and an ohmic electrode (8) around an outer perimeter of the light emitting section (3) on the semiconductor layer (4), and in the outer perimeter of the light emitting section (3), the ohmic electrode (8) and the substrate (5) are conductive, and a penetrating electrode (9) is provided in the semiconductor layer (4), passing through the semiconductor layer (4) in a thickness direction. Thus, it is provided a light emitting diode with high brightness in which the current flowing in the light emitting layer is uniform, and the light emission efficiency from the light emitting layer is high.Type: ApplicationFiled: November 25, 2008Publication date: October 14, 2010Applicant: Showa Denko K.K.Inventor: Ryouichi Takeuchi
-
Patent number: 7790481Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.Type: GrantFiled: May 15, 2008Date of Patent: September 7, 2010Assignee: Showa Denko K.K.Inventors: Ryouichi Takeuchi, Wataru Nabekura, Takashi Udagawa
-
Patent number: 7732830Abstract: A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.Type: GrantFiled: March 14, 2005Date of Patent: June 8, 2010Assignee: Showa Denko K.K.Inventors: Ryouichi Takeuchi, Takashi Udagawa
-
Patent number: 7732831Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.Type: GrantFiled: September 26, 2006Date of Patent: June 8, 2010Assignee: Showa Denko K.K.Inventors: Ryouichi Takeuchi, Wataru Nabekura, Takashi Udagawa
-
Publication number: 20100123161Abstract: A light emitting diode includes a substrate, a compound semiconductor layer including a light emitting layer formed on the substrate, a first electrode formed on an upper surface of the compound semiconductor layer, and a second electrode formed on the substrate or a semiconductor layer which is exposed by removing at least a portion of the compound semiconductor layer. The first electrode includes a wiring electrode provided on the compound semiconductor layer in contact therewith, an ohmic electrode provided on the compound semiconductor layer in contact therewith, a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode, and a bonding pad electrode connected to the wiring electrode, at least a portion of the bonding pad electrode being exposed from an opening of the translucent electrode to the exterior.Type: ApplicationFiled: November 18, 2009Publication date: May 20, 2010Applicant: SHOWA DENKO K.K.Inventors: Ryouichi TAKEUCHI, Kyousuke MASUYA
-
Publication number: 20090278148Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.Type: ApplicationFiled: December 22, 2006Publication date: November 12, 2009Applicant: SHOWA DENKO K.K.Inventors: Wataru Nabekura, Ryouichi Takeuchi
-
Publication number: 20090121242Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1×1020 cm?3 or less.Type: ApplicationFiled: July 5, 2006Publication date: May 14, 2009Applicant: SHOWA DENKO K.K.Inventors: Takashi Watanabe, Ryouichi Takeuchi
-
Patent number: 7528417Abstract: A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 ?m and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 ?m/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 ?m or more.Type: GrantFiled: February 9, 2004Date of Patent: May 5, 2009Assignee: Showa Denko K.K.Inventors: Ryouichi Takeuchi, Keiichi Matsuzawa, Junichi Yamazaki
-
Publication number: 20080315176Abstract: A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.Type: ApplicationFiled: July 5, 2006Publication date: December 25, 2008Inventors: Ryouichi Takeuchi, Atsushi Matsumura, Takashi Watanabe
-
Publication number: 20080268562Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.Type: ApplicationFiled: May 15, 2008Publication date: October 30, 2008Inventors: Ryouichi TAKEUCHI, Wataru Nabekura, Takashi Udagawa
-
Publication number: 20070215886Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.Type: ApplicationFiled: March 28, 2005Publication date: September 20, 2007Inventors: Ryouichi Takeuchi, Wataru Nabekura, Takashi Udagawa
-
Publication number: 20070164304Abstract: A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.Type: ApplicationFiled: March 14, 2005Publication date: July 19, 2007Inventors: Ryouichi Takeuchi, Takashi Udagawa
-
Publication number: 20060237741Abstract: An LED (10) includes a compound semiconductor layer (13) that contains a light-emitting part and an alkali glass substrate (150) that contains at least 1 mass % of one element selected from sodium, calcium, barium and potassium and is transparent to light-emitting wavelength of the part. The substrate is fixed or joined in contact with the semiconductor layer. In a method for producing the diode (10), the semiconductor layer (13) is grown on a semiconductor substrate (1) untransparent to the wavelength, the grown semiconductor layer and alkali glass substrate are joined by the anode junction method, the untransparent substrate is removed, a first ohmic electrode (15) having a first polarity is formed on part of a main surface of the semiconductor layer, a second ohmic electrode (16) is formed on the semiconductor layer having a second polarity, and the first ohmic electrode and semiconductor layer are covered with a metal reflecting layer (14).Type: ApplicationFiled: March 9, 2004Publication date: October 26, 2006Inventors: Ryouichi Takeuchi, Wataru Nabekura