Patents by Inventor Ryousuke ITOU
Ryousuke ITOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11732441Abstract: There is provided a construction machine that draws attention from the surroundings of the machine body when the prime mover is started and that can have the operator reliably confirm the surroundings of the machine body before the prime mover is started. An engine start control section 23 of a main controller 22 inhibits an engine 18 from starting when a key switch 12 is operated while a horn switch 21 is not operated, inhibits the engine 18 from starting when the key switch 12 is operated for the duration until a first set time T1 elapses after the operation of the horn switch 21 has been finished, permits the engine 18 to start in a case the key switch 12 is operated for the duration until a second set time T2 elapses after the first set time T1 has elapsed, and inhibits the engine 18 again from starting when the key switch 12 is operated if the engine 18 is not started for the duration until the second set time T2 elapses.Type: GrantFiled: January 15, 2020Date of Patent: August 22, 2023Assignee: HITACHI CONSTRUCTION MACHINERY CO., LTD.Inventors: Shinji Nishikawa, Ryousuke Itou, Katsuaki Kodaka
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Publication number: 20230055230Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.Type: ApplicationFiled: November 19, 2021Publication date: February 23, 2023Inventors: Ryousuke ITOU, Akihisa SAI, Kenzo IIZUKA
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Publication number: 20230057885Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. A set of one or more bridge structures including a doped semiconductor material is formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the sets of at least one bridge structure are present within the backside trenches.Type: ApplicationFiled: August 19, 2021Publication date: February 23, 2023Inventors: Ryousuke ITOU, Akihisa SAI, Kenzo IIZUKA
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Patent number: 11532570Abstract: A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.Type: GrantFiled: February 11, 2021Date of Patent: December 20, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Genta Mizuno, Kenzo Iizuka, Satoshi Shimizu, Keisuke Izumi, Tatsuya Hinoue, Yujin Terasawa, Seiji Shimabukuro, Ryousuke Itou, Yanli Zhang, Johann Alsmeier, Yusuke Yoshida
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Publication number: 20220352201Abstract: A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, forming a sacrificial memory opening fill structure in the memory opening, replacing the sacrificial material layers with electrically conductive layers, removing the sacrificial memory opening fill structure selective to the electrically conductive layers, and forming a memory opening fill structure the memory opening after replacing the sacrificial material layers with electrically conductive layers and after removing the sacrificial memory opening fill structure. The memory opening fill structure includes a memory film and a vertical semiconductor channel.Type: ApplicationFiled: November 10, 2021Publication date: November 3, 2022Inventors: Tatsuya HINOUE, Yusuke MUKAE, Ryousuke ITOU, Masanori TSUTSUMI, Akio NISHIDA, Ramy Nashed Bassely SAID
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Publication number: 20220254733Abstract: A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.Type: ApplicationFiled: February 11, 2021Publication date: August 11, 2022Inventors: Genta MIZUNO, Kenzo IIZUKA, Satoshi SHIMIZU, Keisuke IZUMI, Tatsuya HINOUE, Yujin TERASAWA, Seiji SHIMABUKURO, Ryousuke ITOU, Yanli ZHANG, Johann ALSMEIER, Yusuke YOSHIDA
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Publication number: 20220109003Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film and a vertical semiconductor channel. The memory film includes a tunneling dielectric layer, a charge storage layer that laterally surrounds the tunneling dielectric layer, a dielectric metal oxide blocking dielectric layer that laterally surrounds the charge storage layer and contacts the vertical semiconductor channel, and a silicon oxide blocking dielectric layer that laterally surrounds the dielectric metal oxide blocking dielectric layer and contacts the vertical semiconductor channel.Type: ApplicationFiled: October 7, 2020Publication date: April 7, 2022Inventors: Noriyuki NAGAHATA, Takashi YUDA, Ryousuke ITOU
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Publication number: 20210348362Abstract: There is provided a construction machine that draws attention from the surroundings of the machine body when the prime mover is started and that can have the operator reliably confirm the surroundings of the machine body before the prime mover is started. An engine start control section 23 of a main controller 22 inhibits an engine 18 from starting when a key switch 12 is operated while a horn switch 21 is not operated, inhibits the engine 18 from starting when the key switch 12 is operated for the duration until a first set time T1 elapses after the operation of the horn switch 21 has been finished, permits the engine 18 to start in a case the key switch 12 is operated for the duration until a second set time T2 elapses after the first set time T1 has elapsed, and inhibits the engine 18 again from starting when the key switch 12 is operated if the engine 18 is not started for the duration until the second set time T2 elapses.Type: ApplicationFiled: January 15, 2020Publication date: November 11, 2021Inventors: Shinji NISHIKAWA, Ryousuke ITOU, Katsuaki KODAKA
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Patent number: 11018152Abstract: First memory openings are formed through a first alternating stack of first insulating layers and first spacer material layers. Each first memory opening is filled with a first memory film, a sacrificial dielectric liner, and a first-tier opening fill material portion. Second memory openings are formed through a second alternating stack of second insulating layers and second spacer material layers. A second memory film is formed in each second memory opening. The first-tier opening fill material portions are removed selective to the sacrificial dielectric liners. The sacrificial dielectric liners are removed selective to the second memory films and the first memory films. A vertical semiconductor channel can be formed on each vertical stack of a first memory film and a second memory film.Type: GrantFiled: July 5, 2019Date of Patent: May 25, 2021Assignee: SANDISK TECHNOLOGIES LLCInventors: Tatsuya Hinoue, Kengo Kajiwara, Ryousuke Itou, Naohiro Hosoda
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Patent number: 9754999Abstract: A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.Type: GrantFiled: August 18, 2016Date of Patent: September 5, 2017Assignee: SanDisk Technologies LLCInventors: Seje Takaki, Manabu Hayashi, Ryousuke Itou, Takuro Maede, Kengo Kajiwara, Tetsuya Yamada, Yusuke Oda
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Patent number: 9673257Abstract: A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge section disposed between the first rail gate and the second rail gate.Type: GrantFiled: June 3, 2016Date of Patent: June 6, 2017Assignee: SanDisk Technologies LLCInventors: Seje Takaki, Manabu Hayashi, Akira Nakada, Ryousuke Itou, Takuro Maede, Kengo Kajiwara, Tetsuya Yamada
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Patent number: 9613366Abstract: An information distribution server 50 acquires owner information on owners of a plurality of electronic devices 1 charged by a charging device 20 from the electronic devices 1 through the charging device 20, determines a configuration of a group constituted by a plurality of owners who are charging the electronic devices 1 by the charging device 20, by using the plurality of pieces of acquired owner information, acquires information corresponding to the determined configuration of the group from a database 40 that stores information according to a configuration of a group constituted by a plurality of owners, and causes the acquired information to be transmitted to the electronic devices 1 charged by the charging device 20 from the charging device 20.Type: GrantFiled: January 9, 2015Date of Patent: April 4, 2017Assignee: FUJIFILM CorporationInventors: Koudai Fujita, Ryousuke Itou, Junji Hayashi, Masanari Asano, Takeshi Misawa
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Patent number: 9548313Abstract: A method of making a monolithic three dimensional NAND string includes forming a select gate layer of a third material over a major surface of a substrate, forming a stack of alternating first material and second material layers over the select gate layer, where the first material, the second material and the third material are different from each other, and etching the stack using a first etch chemistry to form at least one opening in the stack at least to the select gate layer, such that the select gate layer acts as an etch stop layer during the step of etching.Type: GrantFiled: May 29, 2015Date of Patent: January 17, 2017Assignee: SANDISK TECHNOLOGIES LLCInventors: Shinsuke Yada, Shigehiro Fujino, Hajime Kimura, Masanori Terahara, Ryoichi Honma, Hiroyuki Ogawa, Ryousuke Itou
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Patent number: 9515523Abstract: A power supply management method for electronic devices includes: an electric power transmission step of wirelessly transmitting electric power to each of electronic devices 50, 60 placed on a table 10 from a power supplying device 20 contained in the top plate of the table 10; a step of receiving electric power transmitted from the power supplying device 20 by each of the electronic devices 50, 60; and a step of activating the system of each of the electronic devices by the electronic devices 50, 60 when the electric power is received from the power supplying device 20 and an amount of the received electric power is equal to or larger than a threshold value for system activation.Type: GrantFiled: January 23, 2015Date of Patent: December 6, 2016Assignee: FUJIFILM CorporationInventors: Koudai Fujita, Ryousuke Itou, Junji Hayashi, Masanari Asano, Takeshi Misawa
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Patent number: 9496747Abstract: A system includes a plurality of electronic apparatuses which have a function of feeding power of a battery to other electronic apparatuses and a function of receiving power from other electronic apparatuses and charging the battery, a management server, and a database. The management server records, in the database, positional information of power feedable electronic apparatuses which permit a power feed to other electronic apparatuses, acquires positional information of a power feed-desiring electronic apparatus which desires a power feed from other electronic apparatuses, specifies a power feedable electronic apparatus in the periphery of the power feed-desiring electronic apparatus using the acquired positional information and the positional information of the power feedable electronic apparatuses in the database, and transmits the positional information of the specified electronic apparatus to the power feed-desiring electronic apparatus.Type: GrantFiled: January 9, 2015Date of Patent: November 15, 2016Assignee: FUJIFILM CorporationInventors: Koudai Fujita, Ryousuke Itou, Junji Hayashi, Masanari Asano, Takeshi Misawa
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Patent number: 9401624Abstract: A charging system 100 includes an electronic equipment 1 and a charging device 2. The charging device 2 includes a control unit 22 that controls a magnetic field generated from a variable magnetic field generating unit 25 which generates a variable magnetic field, and the control unit 22 controls a strength of the magnetic field generated from the variable magnetic field generating unit 25, in accordance with a remaining capacity or an available charging free capacity in a battery 11 of the electronic equipment 1 receiving a power transmitted from a feed circuit 21.Type: GrantFiled: February 27, 2015Date of Patent: July 26, 2016Assignee: FUJIFILM CorporationInventors: Ryousuke Itou, Koudai Fujita, Junji Hayashi, Masanari Asano, Takeshi Misawa
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Publication number: 20150348984Abstract: A method of making a monolithic three dimensional NAND string includes forming a select gate layer of a third material over a major surface of a substrate, forming a stack of alternating first material and second material layers over the select gate layer, where the first material, the second material and the third material are different from each other, and etching the stack using a first etch chemistry to form at least one opening in the stack at least to the select gate layer, such that the select gate layer acts as an etch stop layer during the step of etching.Type: ApplicationFiled: May 29, 2015Publication date: December 3, 2015Inventors: Shinsuke YADA, Shigehiro FUJINO, Hajime KIMURA, Masanori TERAHARA, Ryoichi HONMA, Hiroyuki OGAWA, Ryousuke ITOU
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Publication number: 20150171660Abstract: A charging system 100 includes an electronic equipment 1 and a charging device 2. The charging device 2 includes a control unit 22 that controls a magnetic field generated from a variable magnetic field generating unit 25 which generates a variable magnetic field, and the control unit 22 controls a strength of the magnetic field generated from the variable magnetic field generating unit 25, in accordance with a remaining capacity or an available charging free capacity in a battery 11 of the electronic equipment 1 receiving a power transmitted from a feed circuit 21.Type: ApplicationFiled: February 27, 2015Publication date: June 18, 2015Applicant: FUJIFILM CORPORATIONInventors: Ryousuke ITOU, Koudai FUJITA, Junji HAYASHI, Masanari ASANO, Takeshi MISAWA
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Publication number: 20150137601Abstract: A power supply management method for electronic devices includes: an electric power transmission step of wirelessly transmitting electric power to each of electronic devices 50, 60 placed on a table 10 from a power supplying device 20 contained in the top plate of the table 10; a step of receiving electric power transmitted from the power supplying device 20 by each of the electronic devices 50, 60; and a step of activating the system of each of the electronic devices by the electronic devices 50, 60 when the electric power is received from the power supplying device 20 and an amount of the received electric power is equal to or larger than a threshold value for system activation.Type: ApplicationFiled: January 23, 2015Publication date: May 21, 2015Applicant: FUJIFILM CORPORATIONInventors: Koudai FUJITA, Ryousuke ITOU, Junji HAYASHI, Masanari ASANO, Takeshi MISAWA
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Publication number: 20150127462Abstract: An information distribution server 50 acquires owner information on owners of a plurality of electronic devices 1 charged by a charging device 20 from the electronic devices 1 through the charging device 20, determines a configuration of a group constituted by a plurality of owners who are charging the electronic devices 1 by the charging device 20, by using the plurality of pieces of acquired owner information, acquires information corresponding to the determined configuration of the group from a database 40 that stores information according to a configuration of a group constituted by a plurality of owners, and causes the acquired information to be transmitted to the electronic devices 1 charged by the charging device 20 from the charging device 20.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Applicant: FUJIFILM CORPORATIONInventors: Koudai FUJITA, Ryousuke ITOU, Junji HAYASHI, Masanari ASANO, Takeshi MISAWA