Abstract: An information distribution server 50 acquires owner information on owners of a plurality of electronic devices 1 charged by a charging device 20 from the electronic devices 1 through the charging device 20, determines a configuration of a group constituted by a plurality of owners who are charging the electronic devices 1 by the charging device 20, by using the plurality of pieces of acquired owner information, acquires information corresponding to the determined configuration of the group from a database 40 that stores information according to a configuration of a group constituted by a plurality of owners, and causes the acquired information to be transmitted to the electronic devices 1 charged by the charging device 20 from the charging device 20.

Abstract: A system 100 includes a plurality of electronic apparatuses 1 which have a function of feeding power of a battery 11 to other electronic apparatuses and a function of receiving power from other electronic apparatuses and charging the battery 11, a management server 50, and a database 40. The management server 50 records, in the database 40, positional information of power feedable electronic apparatuses 1 which permit a power feed to other electronic apparatuses, acquires positional information of a power feed-desiring electronic apparatus 1 which desires a power feed from other electronic apparatuses, specifies a power feedable electronic apparatus 1 in the periphery of the power feed-desiring electronic apparatus 1 using the acquired positional information and the positional information of the power feedable electronic apparatuses 1 in the database 40, and transmits the positional information of the specified electronic apparatus 1 to the power feed-desiring electronic apparatus 1.

Abstract: A solid-state imaging device comprises first pixels and second pixels. The first pixel has a first PD and a first photoelectric conversion film. The second pixel has a second PD and a second photoelectric conversion film. The first PD and the second PD are formed in a surface layer of a semiconductor substrate. The first photoelectric conversion film is formed over the first PD, in a position shifted in a rightward direction relative to the center of the first PD. The second photoelectric conversion film is formed over the second PD, in a position shifted in a leftward direction relative to the center of the second PD. The first photoelectric conversion film photoelectrically converts incident light incident on a right area of the first PD. The second photoelectric conversion film photoelectrically converts incident light incident on a left area of the second PD.

Abstract: A solid-state imaging device comprises first pixels and second pixels. The first pixel has a first PD and a first photoelectric conversion film. The second pixel has a second PD and a second photoelectric conversion film. The first PD and the second PD are formed in a surface layer of a semiconductor substrate. The first photoelectric conversion film is formed over the first PD, in a position shifted in a rightward direction relative to the center of the first PD. The second photoelectric conversion film is formed over the second PD, in a position shifted in a leftward direction relative to the center of the second PD. The first photoelectric conversion film photoelectrically converts incident light incident on a right area of the first PD. The second photoelectric conversion film photoelectrically converts incident light incident on a left area of the second PD.