Abstract: There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base; supplying a film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base; and supplying a halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.

Abstract: There is provided a technique that includes: (A) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface; and (B) supplying a film-forming agent to the substrate after forming the inhibitor layer on the first surface to form a film on the second surface, wherein a width of an inhibitor molecule constituting the inhibitor layer is defined as WI, a spacing of adsorption sites on the first surface is defined as DA, a width of a molecule X constituting a predetermined substance contained in the film-forming agent is defined as WP, wherein WP>DA?WI is satisfied when WI is smaller than DA, and wherein WP>DAx?WI is satisfied when WI is larger than DA, where x is a smallest integer that satisfies WI<DAx.

Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

Abstract: A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

Abstract: A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

Abstract: A negative electrode material including silicon nanoparticles, amorphous carbon and graphite, wherein a 10% particle diameter (D10) in a volume-based cumulative particle size distribution is from 3.5 ?m to 9 ?m, a BET specific surface area is from 1 m2/g to 5 m2/g, a ratio (A/B) of the peak area (A) in the vicinity of 99 eV derived from Si to the peak area (B) in the vicinity of 105 eV derived from a silicon oxide observed by X-ray photoelectron spectroscopy is 0.01 to 0.10, and including composite particles, in which amorphous carbon containing silicon nanoparticles are attached to the surface of the graphite particles. Also disclosed is a lithium-ion battery using the negative electrode material, a negative electrode paste and a negative electrode sheet.

Abstract: liquid discharge apparatus includes a liquid discharge head including a plurality of electrodes arranged in parallel, a common electrode positioned to face the liquid discharge head, and a control unit configured to control a voltage to be applied to each of the plurality of electrodes to control the plurality of electrodes as a discharging electrode, which is to discharge a liquid, or as a non-discharging electrode, which is to discharge no liquid, wherein the control unit adjusts a value of the voltage to be applied to the electrode that is to be driven as the non-discharging electrode, based on the voltage to be applied to the electrode adjacent to the electrode that is to be driven as the non-discharging electrode.

Abstract: A conveying apparatus includes: a rotation shaft; a conveying roller secured to the rotation shaft; a driven roller that cooperates with the conveying roller to convey a sheet at a nip position; a supporter supporting the rotation shaft rotatably; and a first guide and a second guide opposed to each other and defining a conveyance path guiding the sheet toward the nip position. The first guide and the second guide respectively have first and second guide surfaces defining the conveyance path. The first guide and the second guide respectively have first and second engaging portions engaged with the rotation shaft at positions different from a position of the supporter in the axial direction of the rotation shaft.

Abstract: A lithium secondary battery, including: a hydrofluoric acid-containing electrolytic solution; an electrode; and a conductive assistant, in which the conductive assistant (1) contains a substance that is poorly soluble in the hydrofluoric acid-containing electrolytic solution, the substance including one or more kinds selected from transition metal compounds, and (2) contains a substance that is soluble in the hydrofluoric acid-containing electrolytic solution, the substance having a total metal mass of 0 mass % or more and 0.003 mass % or less with respect to a total mass of the electrode; and a conductive assistant, including: a substance that is poorly soluble in a hydrofluoric acid-containing electrolytic solution; and a substance that consumes hydrofluoric acid, the conductive assistant being substantially free, or including 1 mass % or less with respect to a total mass thereof, of a substance that is soluble in the hydrofluoric acid-containing electrolytic solution.

Abstract: A conveying apparatus includes: a rotation shaft; a conveying roller secured to the rotation shaft; a driven roller that cooperates with the conveying roller to convey a sheet at a nip position; a supporter supporting the rotation shaft rotatably; and a first guide and a second guide opposed to each other and defining a conveyance path guiding the sheet toward the nip position. The first guide and the second guide respectively have first and second guide surfaces defining the conveyance path. The first guide and the second guide respectively have first and second engaging portions engaged with the rotation shaft at positions different from a position of the supporter in the axial direction of the rotation shaft.

Abstract: A lithium secondary battery, including: a hydrofluoric acid-containing electrolytic solution; an electrode; and a conductive assistant, in which the conductive assistant (1) contains a substance that is poorly soluble in the hydrofluoric acid-containing electrolytic solution, the substance including one or more kinds selected from transition metal compounds, and (2) contains a substance that is soluble in the hydrofluoric acid-containing electrolytic solution, the substance having a total metal mass of 0 mass % or more and 0.003 mass % or less with respect to a total mass of the electrode; and a conductive assistant, including: a substance that is poorly soluble in a hydrofluoric acid-containing electrolytic solution; and a substance that consumes hydrofluoric acid, the conductive assistant being substantially free, or including 1 mass % or less with respect to a total mass thereof, of a substance that is soluble in the hydrofluoric acid-containing electrolytic solution.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

Abstract: A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

Abstract: There is provided a sheet conveyance apparatus, including: a casing; a sheet support unit including a first surface inclined to a placement surface; a separation unit arranged in the sheet support unit on a side of the placement surface and abutting against edges of the sheets supported by the first surface; a first plate member including a second surface arranged in the sheet support unit on a side opposite to the separation unit and faces in the same direction as the first surface; and a feed unit which feeds the sheet supported by the first surface and the distal end of the second surface to the conveyance path while slidably moving the sheet with respect to the separation unit.

Abstract: liquid discharge apparatus includes a liquid discharge head including a plurality of electrodes arranged in parallel, a common electrode positioned to face the liquid discharge head, and a control unit configured to control a voltage to be applied to each of the plurality of electrodes to control the plurality of electrodes as a discharging electrode, which is to discharge a liquid, or as a non-discharging electrode, which is to discharge no liquid, wherein the control unit adjusts a value of the voltage to be applied to the electrode that is to be driven as the non-discharging electrode, based on the voltage to be applied to the electrode adjacent to the electrode that is to be driven as the non-discharging electrode.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.

Abstract: Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate.