Abstract: A method for manufacturing a semiconductor device includes forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

Abstract: Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate.

Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

Abstract: A method of manufacturing a semiconductor device includes forming a thin film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas to the substrate, and supplying excited species from each of a plurality of excitation units provided at a side of the substrate to the substrate. Each of the plurality of excitation units generates the excited species by plasma-exciting a reaction gas. In supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate.

Abstract: There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

Abstract: A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

Abstract: Provided are carbon fibers with low metal ion elution amount without subjecting to high-temperature heat treatment, in which the metal ion may be sometimes precipitated on an electrode of electrochemical devices such as batteries and capacitors to cause short-circuit. The carbon fibers comprises Fe, at least one catalyst metal selected from the group consisting of Mo and V, and a carrier; wherein the carbon fibers have an R value (ID/IG) as measured by Raman spectrometry of 0.5 to 2.0 and have an electrochemical metal elution amount of not more than 0.01% by mass.

Abstract: A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove deposits including a film deposited on surfaces of members in the process chamber by a thermochemical reaction, changing an internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.

Abstract: A cooling method of a thick-gauge steel plate by spraying water from a plurality of spray nozzles on the top and bottom surfaces of the thick-gauge steel plate conveyed between the adjoining pairs of constraining rolls, each comprising a top roll and bottom roll, constraining and conveying the steel plate so as to efficiently cool the top and bottom surfaces of thick-gauge steel plate to secure symmetry of temperatures of the top and bottom surfaces and uniformity of temperature in the plate width direction and achieve improvement of flatness of thick-gauge steel plate and uniformity of quality.

Abstract: There is provided a sheet conveyance apparatus, including: a casing; a sheet support unit including a first surface inclined to a placement surface; a separation unit arranged in the sheet support unit on a side of the placement surface and abutting against edges of the sheets supported by the first surface; a first plate member including a second surface arranged in the sheet support unit on a side opposite to the separation unit and faces in the same direction as the first surface; and a feed unit which feeds the sheet supported by the first surface and the distal end of the second surface to the conveyance path while slidably moving the sheet with respect to the separation unit.

Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

Abstract: A method comprising adding a multi-walled carbon nanotube synthesized by the vapor phase process to a nitric acid aqueous solution of not lower than 0.2 mol/L so as to dissolve a catalyst metal present in the multi-walled carbon nanotube, performing solid-liquid separation to isolate solid matter, and subjecting the isolated solid matter to heat treatment at a temperature higher than 150° C. gives a purified multi-walled carbon nanotube in which the amount of a metallic element left in the multi-walled carbon nanotube originating the catalyst metal is not smaller than 1000 ppm and not larger than 8000 ppm determined by ICP optical emission spectrometry and the amount of an anion left in the multi-walled carbon nanotube originating in the acid is smaller than 20 ppm determined by ion chromatography analysis.

Abstract: Provided is a method of efficiently producing carbon fibers that can impart sufficient electrical or thermal conductivity to a material even by the addition of a small amount of the carbon fibers. The method of producing carbon fibers involves preparing a catalyst by allowing a carrier composed of silica-titania particles comprising silica in the core and titania in the shell of the particle to support a catalytic element, such as Fe element, Co element, Mo element, or V element, and bringing the catalyst into contact with a carbon element-containing material, such as methane, ethane, ethylene, or acetylene, under heating region at about 500 to 1000° C.

Abstract: There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

Abstract: An object of the present invention is to provide a method for producing composite carbon fibers in which two or more carbon fibers are dispersed in a nearly homogenous state, the composite carbon fibers capable of being easily dispersed in a matrix such as a resin without leaving aggregate, and imparting low resistance. Disclosed is a method for producing composite carbon fibers, which comprises imparting a cavitation effect to slurry containing 6% by mass or less of two or more carbon fibers each having a different average fiber diameter under a pressure of 100 MPa or more and less than 245 MPa thereby to form a composite.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas containing the predetermined element and a halogen element to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.

Abstract: Provided is composite carbon fibers comprising multi-walled carbon nanotubes wherein 99% by number or more of the multi-walled carbon nanotubes have a fiber diameter of not less than 5 nm and not more than 40 nm, carbon particles having a primary particle diameter of not less than 20 nm and not more than 100 nm and graphitized carbon nanofibers wherein 99% by number or more of the graphitized carbon nanofibers have a fiber diameter of not less than 50 nm and not more than 300 nm, wherein the multi-walled carbon nanotubes are homogeneously dispersed between the graphitized carbon nanofibers and the carbon particles.

Abstract: An oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element, to the substrate housed in a processing chamber and heated to a first temperature; and changing the specific element-containing layer formed on the substrate, to an oxide layer by supplying a reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure of less than atmospheric pressure and heated to a second temperature higher than the first temperature.