Abstract: The adhesive sheet for manufacturing a semiconductor device is an adhesive sheet for manufacturing a semiconductor device used when a semiconductor element is adhered to an adherend and the semiconductor element is wire-bonded, and is a peelable adhesive sheet in which the 180 degree peeling adhesive strength against a silicon wafer is 5 (N/25 mm width) or less.

Abstract: Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 ?m or more and 260 ?m or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 ?m or more and 200 ?m or less.

Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175-C is 2000 Pa or more.

Abstract: A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface has a multilayered structure including a wafer adhesion layer and a laser mark layer, the wafer adhesion layer is formed of a resin composition containing a thermosetting resin component and, as an optional component, a thermoplastic resin component in an amount of less than 30% by weight relative to the whole amount of resin components, and the laser mark layer is formed of a resin composition containing a thermoplastic resin component in an amount of 30% by weight or more relative to the whole amount of resin components and, as an optional component, a thermosetting resin component.

Abstract: A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.

Abstract: The present invention aims to provide an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, a method of manufacturing a semiconductor device using the same, and a semiconductor device obtained by the manufacturing method. This object is achieved by an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 ?m or more and 260 ?m or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 ?m or more and 200 ?m or less.

Abstract: The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.

Abstract: The thermosetting die-bonding film of the present invention is used in manufacturing a semiconductor device, has at least an epoxy resin, a phenol resin, and an acrylic copolymer, and the ratio X/Y is 0.7 to 5 when X represents a total weight of the epoxy resin and the phenol resin and Y represents a weight of the acrylic copolymer.

Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175-C is 2000 Pa or more.

Abstract: The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)<adhesion of the pressure-sensitive adhesive layer (2b), and the adhesion of the pressure-sensitive adhesive layer (2a) to the die-bonding adhesive layer (3) is not higher than 2.3 N/25 mm.

Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175° C. is 2000 Pa or more.

Abstract: A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.

Abstract: A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.

Abstract: Provided are a semiconductor device producing method with simple production steps while preventing contamination of a bonding pad and preventing warp generation in an adherend such as a substrate, a lead frame, or a semiconductor element, thereby improving yield; an adhesive sheet used in this method; and a semiconductor device obtained by this method. The invention includes a pre-setting step of pre-setting a semiconductor element 13 to an adherend 11 through an adhesive sheet 12, and a wire bonding step of wire bonding the element 13 in the bonding temperatures range of 80 to 250° C. without performing any heating step, wherein, as the adhesive sheet 12, a sheet having a storage elastic modulus of 1 MPa or more in the temperature range of 80 to 250° C. or a storage elastic modulus of 1 MPa or more at any temperature in the temperature range before curing the sheet 12 is used.

Abstract: Provided are a semiconductor device producing method with simple production steps while preventing contamination of a bonding pad and preventing warp generation in an adherend such as a substrate, a lead frame, or a semiconductor element, thereby improving yield; an adhesive sheet used in this method; and a semiconductor device obtained by this method. The invention includes a pre-setting step of pre-setting a semiconductor element 13 to an adherend 11 through an adhesive sheet 12, and a wire bonding step of wire bonding the element 13 in the bonding temperatures range of 80 to 250° C. without performing any heating step, wherein, as the adhesive sheet 12, a sheet having a storage elastic modulus of 1 MPa or more in the temperature range of 80 to 250° C. or a storage elastic modulus of 11 MPa or more at any temperature in the temperature range before curing the sheet 12 is used.

Abstract: The thermosetting die-bonding film of the present invention is used in manufacturing a semiconductor device, has at least an epoxy resin, a phenol resin, and an acrylic copolymer, and the ratio X/Y is 0.7 to 5 when X represents a total weight of the epoxy resin and the phenol resin and Y represents a weight of the acrylic copolymer.

Abstract: The thermosetting die-bonding film of the present invention is used in manufacturing a semiconductor device, has at least an epoxy resin, a phenol resin, and an acrylic copolymer, and the ratio X/Y is 0.7 to 5 when X represents a total weight of the epoxy resin and the phenol resin and Y represents a weight of the acrylic copolymer.

Abstract: A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (?m) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 ?m to 1 ?m, the arithmetic mean roughness Y (?m) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 ?m to 1 ?m, and the absolute value of the difference of the X and Y is 0.015 or more.

Abstract: The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)<adhesion of the pressure-sensitive adhesive layer (2b), and the adhesion of the pressure-sensitive adhesive layer (2a) to the die-bonding adhesive layer (3) is not higher than 2.3 N/25 mm.