Abstract: The dicing die-bonding film of this invention comprises a pressure-sensitive adhesive layer (2) on a supporting base material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein a releasability in an interface between the pressure-sensitive adhesive layer (2) and the die-bonding adhesive layer (3) is different between an interface (A) corresponding to a work-attaching region (3a) in the die-bonding adhesive layer (3) and an interface (B) corresponding to a part or the whole of the other region (3b), and the releasability of the interface (A) is higher than the releasability of the interface (B). According to this invention, there can be provided a dicing die-bonding film excellent in balance between retention in dicing a work and releasability in releasing its diced chipped work together with the die-bonding adhesive layer.

Abstract: The process for producing a semiconductor device according to the invention comprises a pre-sticking/fixing step of pre-sticking/fixing a semiconductor element through an adhesive sheet to an object to which the semiconductor element is to be stuck/fixed, and a wire bonding step of performing wire bonding without heating step, wherein the shear adhesive force of the adhesive sheet to the object is 0.2 MPa or more at the time of the pre-sticking/fixing. This makes it possible to a semiconductor device producing process wherein a drop in the yield of semiconductor devices is suppressed and steps therein are made simple; an adhesive sheet used in this process; and a semiconductor device obtained by the process.

Abstract: The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)<adhesion of the pressure-sensitive adhesive layer (2b), and the adhesion of the pressure-sensitive adhesive layer (2a) to the die-bonding adhesive layer (3) is not higher than 2.3 N/25 mm.

Abstract: The process for producing a semiconductor device according to the invention comprises a pre-sticking/fixing step of pre-sticking/fixing a semiconductor element through an adhesive sheet to an object to which the semiconductor element is to be stuck/fixed, and a wire bonding step of performing wire bonding without heating step, wherein the shear adhesive force of the adhesive sheet to the object is 0.2 MPa or more at the time of the pre-sticking/fixing. This makes it possible to a semiconductor device producing process wherein a drop in the yield of semiconductor devices is suppressed and steps therein are made simple; an adhesive sheet used in this process; and a semiconductor device obtained by the process.

Abstract: A separator capable of inhibiting the self-discharge of a battery. The separator is a battery separator obtained by applying a polymer having in the molecule a carbodiimide unit represented by the following formula (I): —[—R—N?C?N—]n—??(I) (wherein R means an organic group and n means an integer of 1 to 10,000) to a porous sheet substrate.

Abstract: The dicing die-bonding film of this invention comprises a pressure-sensitive adhesive layer (2) on a supporting base material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein a releasability in an interface between the pressure-sensitive adhesive layer (2) and the die-bonding adhesive layer (3) is different between an interface (A) corresponding to a work-attaching region (3a) in the die-bonding adhesive layer (3) and an interface (B) corresponding to a part or the whole of the other region (3b), and the releasability of the interface (A) is higher than the releasability of the interface (B). According to this invention, there can be provided a dicing die-bonding film excellent in balance between retention in dicing a work and releasability in releasing its diced chipped work together with the die-bonding adhesive layer.

Abstract: An adhesive composition is provided that may give stable fixing strength without variation in a coated amount, and may form an adhesive film having excellent storage stability in fixing of semiconductor chips with electrode members. Moreover, an adhesive film (adhesive film for die bonding) obtained from the composition concerned is provided. An adhesive composition is used that is characterized by including epoxy resins (A), phenol resins (B), synthetic rubbers (C), and microcapsules (D) including hardening accelerator that has a core/shell structure in which a core part including hardening accelerator is covered by a shell part formed with thermoplastic resins.

Abstract: A battery highly inhibited from suffering self-discharge. The battery is characterized by containing a built-in polymer which has in the molecule a carbodiimide unit represented the following formula (I): —[—R—N═C═N—)]n—  (I) wherein R means an organic group and n means an integer of 1 to 10,000).

Abstract: As an anisotropic conductive film capable of firmly adhering to an electronic component and a circuit board and achieving good electrical continuity by thermal compression bonding at a low temperature at which the circuit board is not deteriorated, an anisotropic conductive film is provided, which has a plurality of conductive paths 2 insulated from each other and penetrating the film substrate 1A in the direction of the thickness of the film substrate, both ends 2a and 2b of each conductive path being exposed to the top and back faces of the film substrate, wherein the film substrate 1A is mainly composed of a polycarbodiimide copolymer having a structure represented by formula (I) below: R3—NCN&Brketopenst;&Parenopenst;R2—NCN&Parenclosest;nR2—A&Parenopenst;R1—O—CO—O&Parenclosest;mR1—A—R2&Brketclosest;x&Parenopenst;NCN—R2&Parenclosest;nNCN—R3  (I) wherein m represents an integer of 2-50; n represents an integer of 1-30; x represents an i

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: A process of producing a semiconductor device comprises the steps of:

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: A polycarbodiimide represented by the formula (I): wherein R1 is an alkylene group having 2 to 10 carbon atoms, R2 is a divalent aromatic group, R3 is a monovalent aromatic group, k is 0 or an integer of 1 to 30, m is an integer of 2 to 100, and n is 0 or an integer of 1 to 30, a process for preparing the same and uses of the polycarbodiimide. The polycarbodiimide is favorably used in the form of films such as adhesive films for die bonding and adhesive films for underfilling, which can be used in semiconductor devices.

Abstract: A separator capable of inhibiting the self-discharge of a battery.

Abstract: As an anisotropic conductive film capable of firmly adhering to an electronic component and a circuit board and achieving good electrical continuity by thermal compression bonding at a low temperature at which the circuit board is not deteriorated, an anisotropic conductive film is provided, which has a plurality of conductive paths 2 insulated from each other and penetrating the film substrate 1A in the direction of the thickness of the film substrate, both ends 2a and 2b of each conductive path being exposed to the top and back faces of the film substrate, wherein the film substrate 1A is mainly composed of a polycarbodiimide copolymer having a structure represented by formula (I) below:

Abstract: An aromatic polycarbodiimide comprising a structural unit represented by the following formula (I): where R is an organic group having 3 or more carbon atoms, and n is an integer of 2 to 300, and a polycarbodiimide solution, a polycarbodiimide sheet, and an insulated coated electric wire which are prepared using the aromatic polycarbodiimide. The aromatic polycarbodiimide has high solubility in an organic solvent, satisfactory workability, and excellent heat resistance and humidity resistance. The insulated coated electric wire has excellent durability and is highly reliable under high pressure, high humidity conditions.

Abstract: An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a phenolic resin, a hardening accelerator and an inorganic filler. The epoxy resin composition having the following properties (X) to (Z) does not cause the chip tilting attributable to resin flow during resin encapsulation, such as semiconductor element shifting or gold wire deformation, and can obtain highly reliable semiconductor devices: (X) the viscosity thereof as measured with a flow tester at 175° C. is from 50 to 500 P; (Y) the minimum melt viscosity thereof as determined from the temperature dependence of viscosity thereof as measured with a dynamic viscoelastic meter at a shear rate of 5 (1/s) is 1×105 poise or lower; and (Z) the ratio of the viscosity thereof as measured at 90° C. (Z1) to that as measured at 110° C. (Z2) both with a dynamic viscoelastic meter at a shear rate of 5 (1/s), (Z1/Z2), is 2.0 or higher.

Abstract: A polycarbodiimide represented by the formula (I): 1

Abstract: An aromatic polycarbodiimide comprising a structural unit represented by the following formula (I): 1