Patents by Inventor Sam Mook KANG
Sam Mook KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10900142Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.Type: GrantFiled: July 5, 2017Date of Patent: January 26, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sam-mook Kang, Jun-youn Kim, Young-jo Tak, Mi-hyun Kim, Young-soo Park
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Patent number: 10784405Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.Type: GrantFiled: July 18, 2018Date of Patent: September 22, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Jo Tak, Sam Mook Kang, Mi Hyun Kim, Joo Sung Kim, Young Hwan Park, Jong Uk Seo
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Patent number: 10741737Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.Type: GrantFiled: June 26, 2018Date of Patent: August 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Mi Hyun Kim, Young Hwan Park, Sam Mook Kang, Joo Sung Kim, Jong Uk Seo, Young Jo Tak
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Patent number: 10600645Abstract: A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.Type: GrantFiled: July 28, 2017Date of Patent: March 24, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Mi Hyun Kim, Sam Mook Kang, Jun Youn Kim, Young Jo Tak
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Publication number: 20190207057Abstract: A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.Type: ApplicationFiled: July 11, 2018Publication date: July 4, 2019Applicant: Samsung Electronics Co., LtdInventors: Sam Mook Kang, Joo Sung Kim, Jong Uk Seo, Young Jo Tak
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Publication number: 20190189848Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.Type: ApplicationFiled: July 18, 2018Publication date: June 20, 2019Inventors: Young Jo TAK, Sam Mook KANG, Mi Hyun KIM, Joo Sung KIM, Young Hwan PARK, Jong Uk SEO
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Publication number: 20190189877Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.Type: ApplicationFiled: June 26, 2018Publication date: June 20, 2019Inventors: Mi Hyun KIM, Young Hwan PARK, Sam Mook KANG, Joo Sung KIM, Jong Uk SEO, Young Jo TAK
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Publication number: 20190165216Abstract: An ultraviolet light emitting device package, comprising: a growth substrate having a first surface, a second surface corresponding thereto, and a light emitting window penetrating through the first surface and the second surface, a reflective layer disposed on an internal wall of the light emitting window, a light transmissive cover disposed on the first surface and covering the light emitting window, a light emitting structure disposed on the second surface to cover the light emitting window and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a first electrode and a second electrode, connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.Type: ApplicationFiled: May 22, 2018Publication date: May 30, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Sam Mook KANG, Joo Sung Kim, Mi Hyun Kim, Young Hwan Park
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Patent number: 10094045Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.Type: GrantFiled: March 29, 2017Date of Patent: October 9, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Mi-Hyun Kim, Sam-Mook Kang, Jun-Youn Kim, Young-Jo Tak, Young-Soo Park
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Publication number: 20180174823Abstract: A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.Type: ApplicationFiled: July 28, 2017Publication date: June 21, 2018Inventors: Mi Hyun KIM, Sam Mook KANG, Jun Youn KIM, Young Jo TAK
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Publication number: 20180166302Abstract: In a method of forming a nitride semiconductor substrate, a nitride semiconductor substrate may be formed on a silicon substrate. A protection layer may be formed to cover a surface of the nitride semiconductor substrate. The silicon substrate may be removed by an etching process. The protection layer may limit and/or prevent the nitride semiconductor substrate from being etched during the etching process.Type: ApplicationFiled: June 1, 2017Publication date: June 14, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Sam-Mook KANG, Mi-Hyun KIM, Jun-Youn KIM, Young-Jo TAK
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Publication number: 20180112330Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.Type: ApplicationFiled: March 29, 2017Publication date: April 26, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Mi-Hyun KIM, Sam-Mook KANG, Jun-Youn KIM, Young-Jo TAK, Young-Soo PARK
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Patent number: 9947530Abstract: A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.Type: GrantFiled: January 6, 2017Date of Patent: April 17, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Jo Tak, Sam Mook Kang, Mi Hyun Kim, Jun Youn Kim, Young Soo Park
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Patent number: 9941443Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: GrantFiled: March 7, 2016Date of Patent: April 10, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun, Young Jin Choi, Jae Hyeok Heo
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Patent number: 9899565Abstract: A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.Type: GrantFiled: June 16, 2016Date of Patent: February 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Jo Tak, Sam Mook Kang, Mi Hyun Kim, Jun Youn Kim, Young Soo Park, Misaichi Takeuchi
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Publication number: 20180030617Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.Type: ApplicationFiled: July 5, 2017Publication date: February 1, 2018Inventors: Sam-mook KANG, Jun-youn KIM, Young-jo TAK, Mi-hyun KIM, Young-soo PARK
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Publication number: 20170358443Abstract: A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.Type: ApplicationFiled: January 6, 2017Publication date: December 14, 2017Inventors: Young Jo TAK, Sam Mook KANG, Mi Hyun KIM, Jun Youn KIM, Young Soo PARK
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Patent number: 9666754Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.Type: GrantFiled: April 15, 2016Date of Patent: May 30, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Hwan Park, Sam Mook Kang, Jun Youn Kim, Mi Hyun Kim, Joo Sung Kim, Young Jo Tak
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Publication number: 20170069785Abstract: A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.Type: ApplicationFiled: June 16, 2016Publication date: March 9, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Young Jo TAK, Sam Mook KANG, Mi Hyun KIM, Jun Youn KIM, Young Soo PARK, Misaichi TAKEUCHI
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Publication number: 20160351748Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.Type: ApplicationFiled: April 15, 2016Publication date: December 1, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Hwan PARK, Sam Mook KANG, Jun Youn KIM, Mi Hyun KIM, Joo Sung KIM, Young Jo TAK