Patents by Inventor Sam Mook KANG
Sam Mook KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9461199Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.Type: GrantFiled: June 26, 2015Date of Patent: October 4, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyeok Heo, Jung Sub Kim, Young Jin Choi, Jin Sub Lee, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun
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Publication number: 20160190388Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: ApplicationFiled: March 7, 2016Publication date: June 30, 2016Inventors: JIN SUB LEE, Jung Sub KIM, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN, Young Jin CHOI, Jae Hyeok HEO
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Publication number: 20160118533Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may include: stacking a mask layer on a conductive base layer and forming a through hole penetrating the mask layer; growing a nanocore through the through hole from the conductive base layer using precursor gas including indium-containing precursor gas in a mixed gas atmosphere of nitrogen and hydrogen; removing the mask layer; and sequentially growing an active layer and a first conductivity type semiconductor layer on a surface of the nanocore.Type: ApplicationFiled: October 20, 2015Publication date: April 28, 2016Inventors: MISAICHI TAKEUCHI, Sam Mook KANG, Shigeru INOUE, Ki Se KIM
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Patent number: 9312439Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: GrantFiled: August 7, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun, Young Jin Choi, Jae Hyeok Heo
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Patent number: 9269865Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.Type: GrantFiled: October 16, 2014Date of Patent: February 23, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Dae Myung Chun, Jung Sub Kim, Jin Sub Lee, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Young Jin Choi, Jae Hyeok Heo
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Publication number: 20160013362Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.Type: ApplicationFiled: June 26, 2015Publication date: January 14, 2016Inventors: Jae Hyeok HEO, Jung Sub KIM, Young Jin CHOI, Jin Sub LEE, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN
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Patent number: 9184343Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.Type: GrantFiled: August 8, 2014Date of Patent: November 10, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Geon Wook Yoo, Jae Hyeok Heo, Sam Mook Kang, Han Kyu Seong
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Patent number: 9184335Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.Type: GrantFiled: January 13, 2014Date of Patent: November 10, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Sam Mook Kang, Han Kyu Seong
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Publication number: 20150236202Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.Type: ApplicationFiled: October 16, 2014Publication date: August 20, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Myung CHUN, Jung Sub KIM, Jin Sub LEE, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Young Jin Choi, Jae Hyeok HEO
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Publication number: 20150194571Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: ApplicationFiled: August 7, 2014Publication date: July 9, 2015Inventors: Jin Sub LEE, Jung Sub KIM, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN, Young Jin CHOI, Jae Hyeok HEO
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Publication number: 20150155432Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.Type: ApplicationFiled: August 8, 2014Publication date: June 4, 2015Inventors: Geon Wook YOO, Jae Hyeok HEO, Sam Mook KANG, Han Kyu SEONG
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Patent number: 8853671Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.Type: GrantFiled: October 22, 2012Date of Patent: October 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-Goo Cha, Geon-Wook Yoo, Han-Kyu Seong, Sam-Mook Kang, Hun-Jae Chung
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Patent number: 8847199Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.Type: GrantFiled: November 8, 2012Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-Go Cha, Geon-Wook Yoo, Han-Kyu Seong, Sam-Mook Kang, Hun-Jae Chung
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Publication number: 20140206116Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.Type: ApplicationFiled: January 13, 2014Publication date: July 24, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Wook HWANG, Sam Mook KANG, Han Kyu SEONG