Patents by Inventor Samantha SiamHwa Tan
Samantha SiamHwa Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112896Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.Type: ApplicationFiled: December 8, 2023Publication date: April 4, 2024Inventors: Jengyi Yu, Samantha SiamHwa Tan, Seongjun Heo, Ge Yuan, Siva Krishnan Kanakasabapathy
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Patent number: 11935758Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.Type: GrantFiled: April 27, 2020Date of Patent: March 19, 2024Assignee: Lam Research CorporationInventors: Wenbing Yang, Mohand Brouri, Samantha SiamHwa Tan, Shih-Ked Lee, Yiwen Fan, Wook Choi, Tamal Mukherjee, Ran Lin, Yang Pan
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Publication number: 20240036474Abstract: Various techniques for controlling metal-containing contamination on a semiconductor substrate are provided herein. Such techniques may involve one or more of a post-development bake treatment, a chemical treatment, a plasma treatment, a light treatment, and a backside and bevel edge clean. The techniques may be combined as desired for a particular application. In many cases, the techniques are used to address metal-containing contamination that is generated during a photoresist development operation.Type: ApplicationFiled: March 31, 2022Publication date: February 1, 2024Inventors: Daniel PETER, Samantha SiamHwa TAN, Jengyi Yu, Da Li, Meng Xue, Wook Choi, Ji Yeon Kim, Alan J. Jensen, Shahd Hassan Labib, Younghee Lee, Hongxiang Zhao
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Publication number: 20240021435Abstract: A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.Type: ApplicationFiled: December 6, 2021Publication date: January 18, 2024Inventors: Yiwen FAN, Wenbing YANG, Ran LIN, Samantha SiamHwa TAN, Timothy William WEIDMAN, Tamal MUKHERJEE
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Patent number: 11842888Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.Type: GrantFiled: December 30, 2022Date of Patent: December 12, 2023Assignee: Lam Research CorporationInventors: Jengyi Yu, Samantha SiamHwa Tan, Seongjun Heo, Ge Yuan, Siva Krishnan Kanakasabapathy
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Publication number: 20230314954Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.Type: ApplicationFiled: June 17, 2021Publication date: October 5, 2023Inventors: Daniel PETER, Jengyi YU, Samantha Siamhwa TAN, Meng XUE, Da LI, Keith Edward DAWSON, Clint Edward THOMAS, John Danny Baterina PACHO
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Publication number: 20230298869Abstract: A method for atomic layer etching copper or copper alloy over a substrate in a plasma processing chamber comprising a plurality of cycles is provided. Each cycle of the plurality of cycles comprises a copper modification phase and an activation phase. The copper modification phase comprises flowing a modification gas into the plasma processing chamber, transforming the modification gas into a modification plasma, and exposing the copper or copper alloy to the modification plasma, wherein at least a part of the copper or copper alloy is modified. The activation phase comprises flowing an activation gas into the plasma processing chamber, wherein the activation gas, comprises a hydrogen containing gas, transforming the activation gas into an activation plasma, and exposing the modified copper or copper alloy to the activation plasma, wherein at least a volatile copper or copper alloy complex is formed.Type: ApplicationFiled: August 12, 2021Publication date: September 21, 2023Inventors: Wenbing YANG, Ran LIN, Samantha SiamHwa TAN, Mohand BROURI, Yang PAN
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Publication number: 20230230819Abstract: A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.Type: ApplicationFiled: June 8, 2021Publication date: July 20, 2023Inventors: Ran LIN, Wenbing YANG, Tamal MUKHERJEE, Jengyi YU, Samantha SiamHwa TAN, Yang PAN, Yiwen FAN
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Publication number: 20230187234Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.Type: ApplicationFiled: February 2, 2023Publication date: June 15, 2023Inventors: Keren J. KANARIK, Samantha SiamHwa TAN, Yang PAN, Jeffrey MARKS
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Patent number: 11670516Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.Type: GrantFiled: August 19, 2019Date of Patent: June 6, 2023Assignee: Lam Research CorporationInventors: Karthik S. Colinjivadi, Samantha SiamHwa Tan, Shih-Ked Lee, George Matamis, Yongsik Yu, Yang Pan, Patrick Van Cleemput, Akhil Singhal, Juwen Gao, Raashina Humayun
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Publication number: 20230148265Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.Type: ApplicationFiled: December 30, 2022Publication date: May 11, 2023Inventors: Jengyi YU, Samantha SiamHwa TAN, Seongjun HEO, Ge YUAN, Siva Krishnan KANAKASABAPATHY
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Publication number: 20230118701Abstract: A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.Type: ApplicationFiled: April 6, 2021Publication date: April 20, 2023Inventors: Samantha SiamHwa TAN, Daniel PETER, Arunima Deya BALAN, Younghee LEE, Yang PAN
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Patent number: 11594429Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.Type: GrantFiled: March 12, 2019Date of Patent: February 28, 2023Assignee: Lam Research CorporationInventors: Keren J. Kanarik, Samantha SiamHwa Tan, Yang Pan, Jeffrey Marks
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Publication number: 20230047486Abstract: A method for forming etched features in a layer of a first material is provided. A layer of a second material is deposited over the layer of the first material. An alloy layer of the first material and the second material is formed between the layer of the first material and the layer of the second material. The layer of the first material is selectively etched with respect to the alloy layer, using the alloy layer as a hardmask.Type: ApplicationFiled: January 25, 2021Publication date: February 16, 2023Inventors: Younghee LEE, Daniel PETER, Samantha SiamHwa TAN
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Patent number: 11521860Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.Type: GrantFiled: September 26, 2019Date of Patent: December 6, 2022Assignee: Lam Research CorporationInventors: Jun Xue, Samantha SiamHwa Tan, Mohand Brouri, Yuanhui Li, Daniel Peter, Alexander Kabansky
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Publication number: 20220376174Abstract: A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface.Type: ApplicationFiled: July 20, 2020Publication date: November 24, 2022Inventors: Wenbing YANG, Tamal MUKHERJEE, Zhongwei ZHU, Samantha SiamHwa TAN, Ran LIN, Yang PAN, Ziad EL OTELL, Yiwen FAN
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Publication number: 20220344136Abstract: A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.Type: ApplicationFiled: June 25, 2020Publication date: October 27, 2022Inventors: Daniel Peter, Da Li, Timothy William Weidman, Boris Volosskiy, Chenghao Wu, Katie Lynn Nardi, Kevin Li Gu, Leon Taleh, Samantha SiamHwa Tan, Jengyi Yu, Meng Xue
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Patent number: 11450532Abstract: A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.Type: GrantFiled: June 25, 2020Date of Patent: September 20, 2022Assignee: Lam Research CorporationInventors: Younghee Lee, Daniel Peter, Samantha SiamHwa Tan, Yang Pan
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Publication number: 20220254649Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.Type: ApplicationFiled: September 9, 2020Publication date: August 11, 2022Inventors: Samantha SiamHwa TAN, Tamal MUKHERJEE, Wenbing YANG, Girish DIXIT, Yang PAN
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Publication number: 20220244645Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.Type: ApplicationFiled: June 25, 2020Publication date: August 4, 2022Inventors: Samantha SiamHwa Tan, Jengyi Yu, Da Li, Yiwen Fan, Yang Pan, Jeffrey Marks, Richard A. Gottscho, Daniel Peter, Timothy William Weidman, Boris Volosskiy, Wenbing Yang