Abstract: A polymer having a repeating unit comprising a copolymer of butadiene sulfone and maleic anhydride, and a chemically amplified resist composition comprising the polymer.

Abstract: Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer.

Abstract: There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer.

Abstract: A resist composition includes a photosensitive polymer having a lactone in its backbone. The photosensitive polymer of the resist composition includes at least one of the monomers having the formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x, y, v and w are independently integers from 1 to 6.

Abstract: A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Abstract: A photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof, wherein the photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl group, R2 is &ggr;-butyrolactone-2-yl, &ggr;-butyrolactone-3-yl, pantolactone-2-yl, mevalonic lactone, 3-tetrahydrofuranyl, 2,3-propylenecarbonate-1-yl or 3-methyl-&ggr;-butyrolactone-3-yl, R3 is a hydrogen atom, methyl, ethyl or C3 to C20 alicyclic hydrocarbon, and p/(p+q+r) is 0.1˜0.8, q/(p+q+r) is 0.2˜0.8, and r/(p+q+r) is 0.0˜0.4. To prepare the photosensitive polymer, at least two different norbornene-type compounds having an ester group as a substituent are reacted in the presence of an initiator at a temperature of about 120 to about 150 ° C. without a reaction catalyst.

Abstract: A photosensitive compound, and a chemically amplified photoresist composition containing the photosensitive compound, maintain transparency even when exposed to a short-wavelength light source of 193 nm or below, and exhibit improved adhesion to an underlying film or substrate, improved wettability to a developing solution and improved resistance to dry etching. The photosensitive compound includes a carboxylic acid protected with a protective group capable of being deprotected with an acid and has a hydroxy at position No. 3 substituted with a hydrophillic aliphatic compound or a hydrophillic alicyclic compound.

Abstract: A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, an

Abstract: Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same.

Abstract: A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: 1

Abstract: A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: 1

Abstract: A photosensitive polymer including a copolymer of an acrylate or methacrylate monomer having a group indicated by the following formula (I), a comonomer selected from a maleic anhydride monomer and a cyclic vinyl ether monomer, and a resist composition including the same.

Abstract: A resist composition includes a photosensitive polymer having a lactone in its backbone.

Abstract: A photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof, wherein the photosensitive polymer is represented by the following formula: 1

Abstract: A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.