Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: The present invention relates to a graphene composition having liquid crystalline properties and a preparation method thereof, and more particularly to a graphene composition wherein graphene having useful electrical properties is uniformly dispersed in a medium, whereby it is chemically and physically stable, exhibits a liquid crystal phase in a wide temperature range and has good compatibility with other compounds, and to a preparation method thereof. In the graphene composition, liquid crystalline properties are imparted to graphene, which can be produced in large amounts and has excellent mechanical, chemical and electrical properties, and thus the graphene composition can provide a chance to apply functional carbon materials in various fields, including nanocomposites, energy storage materials, and photonics.

Abstract: Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Abstract: Provided is a method of nano-patterning block copolymers and a method of manufacturing a polarizer using the same. The method of nano-patterning block copolymers includes coating block copolymers on a lower substrate to a predetermined thickness, forming a thickness gradient by patterning the block copolymers to have a predetermined aspect ratio, and aligning self-assembled block copolymers in a direction of the thickness gradient by heat-treating the block copolymers having the thickness gradient.

Abstract: An alkylated bisphenol-based compound, a method of preparing the same, sulfonated polyarylene sulfone polymer prepared from the alkylated bisphenol-based compound, a method of preparing the polymer, and a fuel cell using the sulfonated polyarylene sulfone polymer.

Abstract: A sulfonated poly(arylene sulfone) contains an unsaturated bond. A cross-linked material may be formed from the sulfonated poly(arylene sulfone), and a clay nanocomposite may include the sulfonated poly(arylene sulfone) or the cross-linked material. A fuel cell includes the clay nanocomposite.

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

Abstract: According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.

Abstract: Disclosed are block copolymer nanostructures formed on surface patterns different from nanostructure of the block copolymer and preparation methods thereof.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: Provided is a method of nano-patterning block copolymers and a method of manufacturing a polarizer using the same. The method of nano-patterning block copolymers includes coating block copolymers on a lower substrate to a predetermined thickness, forming a thickness gradient by patterning the block copolymers to have a predetermined aspect ratio, and aligning self-assembled block copolymers in a direction of the thickness gradient by heat-treating the block copolymers having the thickness gradient.