Abstract: An electrode sheet disposed in a touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; a pressure electrode disposed under the display module; and a reference pressure electrode disposed under the display module. A distance between the pressure electrode and a reference potential layer is changed when the pressure is applied to the touch surface. A capacitance detected at the pressure electrode is changed according to the distance change. A magnitude of the pressure applied to the touch surface is calculated on the basis of a difference between a reference capacitance calculated from a capacitance detected at the reference pressure electrode and a detected capacitance calculated from the capacitance detected at the pressure electrode.

Abstract: A touch pressure sensitivity correction method may be provided that includes: defining a plurality of reference points on a touch sensor panel; generating a reference data for a capacitance change amount sensed by applying the same pressure to the plurality of reference points; generating an interpolated data corresponding to a capacitance change amount for a random point present between the plurality of reference points; calculating, on the basis of the reference data and interpolated data, with respect to the reference points and the random point respectively, a correction factor for correcting a sensitivity of a touch input device to a target value; and correcting uniformly for the touch pressure sensitivity of the touch input device by applying the calculated correction factor to each corresponding point.

Abstract: According to one embodiment, a touch input device includes a pressure detection module for detecting the touch pressure, and a reference potential layer provided under the pressure detection module. The reference potential layer is composed of at least one of a battery having a conductive material and a can receiving other components. Through this, the touch input device is capable of the most efficient detection of the touch pressure when various components provided in the touch input device are used as the reference potential layer, or when there are a plurality of the reference potential layers. In particular, when the plurality of reference potential layers having various forms and shapes are provided, the most efficient reference potential layer can be selected.

Abstract: A touch input device which includes a display module and is capable of detecting a pressure may be provided. The touch input device includes: a display module including a flat portion and at least one curved portion which extends from the flat portion and is curved with a predetermined curvature; and a pressure detection module which is formed under the display module and detects a touch pressure applied to a surface of the display module. The pressure detection module detects the touch pressure on the basis of a capacitance change amount according to a distance change between a reference potential layer and the pressure detection module. As a result, the touch input device including various types and forms of the display modules is capable of efficiently detecting the touch position and touch pressure.

Abstract: A sensitivity compensation method of a touch input device sensing a touch pressure may be provided. The sensitivity compensation method includes: detecting a capacitance change amount by applying a pressure to a plurality of points defined on a touch sensor panel; generating a raw data for the capacitance change amount of the defined point; generating a decimal value data for each of the sets by dividing a data value within the set by a maximum value within the set; calculating an average value of each defined point; generating a representative value data by calculating a value corresponding to all the points of the touch sensor panel; calculating a balance factor on the basis of the representative value data; and compensating for a touch pressure sensitivity of the touch input device by using the balance factor.

Abstract: A display panel capable of sensing a touch pressure may be provided, that includes: a plurality of first electrodes and a plurality of second electrodes which are formed in different layers apart from each other; a plurality of third electrodes formed in the same layer as the layer in which the first electrode is formed; and a reference electrode which is provided between the layer in which the first electrode and the third electrode are formed and the layer in which the second electrode is formed, or provided under the layer in which the first electrode and the third electrode are formed. The plurality of the second electrodes generate a first signal including information on a capacitance which is changed by a touch, and the plurality of the third electrodes generate a second signal including information on a capacitance which is changed by the touch. As a result, it is not necessary to separately provide the touch sensor because the touch position and the touch pressure can be sensed by the display panel.

Abstract: An electrode sheet including an electrode layer and a support layer may be provided. The electrode layer includes a first electrode and a second electrode. The electrode sheet is used to detect a capacitance change between the first electrode and the second electrode, which is changed according to a relative distance change between the electrode layer and a reference potential layer disposed apart from the electrode sheet. The support layer is made of a material which is bent when a pressure is applied thereto and which is restored to its original state when the pressure is released therefrom.

Abstract: An electrode sheet including an electrode layer and a support layer may be provided. The electrode layer includes a first electrode and a second electrode. The electrode sheet is used to detect a capacitance change between the first electrode and the second electrode, which is changed according to a relative distance change between the electrode layer and a reference potential layer disposed apart from the electrode sheet. The support layer is made of a material which is bent when a pressure is applied thereto and which is restored to its original state when the pressure is released therefrom.

Abstract: In one embodiment, a touch sensor includes a first electrode, a second electrode, and a spacer layer located between the first electrode and the second electrode. One of the first electrode and the second electrode is a drive electrode to which a drive signal is applied. The other one of the first electrode and the second electrode is a receiving electrode that receives the drive signal by a mutual capacitance between the first electrode and the second electrode. When an external pressure is applied to the first electrode through a display, the first electrode is concavely bent toward the second electrode. The mutual capacitance between the first electrode and the second electrode changes according to a distance between the first electrode and the second electrode. The magnitude of the external pressure according to the change of the capacitance between the first electrode and the second electrode is detected.

Abstract: An electrode sheet including an electrode layer and a support layer may be provided. The electrode layer includes a first electrode and a second electrode. The electrode sheet is used to detect a capacitance change between the first electrode and the second electrode, which is changed according to a relative distance change between the electrode layer and a reference potential layer disposed apart from the electrode sheet. The support layer is made of a material which is bent when a pressure is applied thereto and which is restored to its original state when the pressure is released therefrom.

Abstract: A touch sensor panel may be provided that includes: a plurality of first electrodes which are formed on a first insulation layer and extend in a first axial direction; a plurality of second electrodes which are formed on a second insulation layer and extend in a second axial direction crossing the first axial direction; and a space layer located between the first electrode and the second insulation layer. A distance between the first electrode and the second electrode changes depending on a magnitude of a pressure of a touch applied to at least any one of the first electrode and the second electrode. A capacitance between the first electrode and the second electrode changes depending on the distance.

Abstract: An apparatus for controlling a latency in a synchronous semiconductor device. The apparatus includes a first counting block for counting a cycle of a first clock signal to thereby generate a first binary code; a second counting block for counting a cycle of a second clock signal to thereby generate a second binary code. The second clock signal is obtained by delaying the first clock signal by a predetermined delay amount, A code comparison block stores the second binary code in response to a command and compares the first binary code with the second binary code to thereby generate a latency control signal.

Abstract: A semiconductor system includes a semiconductor memory configured to determine whether an error has occurred in a data pattern and generate an error signal, and a memory controller configured to provide the data pattern to the semiconductor memory and perform data training with respect to the semiconductor memory using the error signal.

Abstract: A semiconductor memory apparatus includes: a precharge voltage control unit configured to selectively output a bit line precharge voltage or a core voltage as a control voltage in response to a test signal; a bit line equalization unit configured to precharge a bit line to the control voltage; a sense amplifier driving control unit configured to generate a first voltage supply control signal, a second voltage supply control signal and a third voltage supply control signal in response to the test signal, a sense amplifier enable test signal, a first voltage supply signal, a second voltage supply signal and a third voltage supply signal; and a voltage supply unit configured to provide the core voltage, an external voltage and a ground voltage to a sense amplifier with an open bit line structure in response to the first to third voltage supply control signals.

Abstract: A method for adjusting a timing between an internal clock and a command in a gear down mode of a memory device includes detecting a sync pulse at rising and falling edges of the internal clock, and adjusting between the internal clock of the memory device and the command according to the detection result.

Abstract: A method for synchronizing signals includes the steps of receiving a preamble of a data strobe signal in response to a write preamble command, and synchronizing the data strobe signal with a clock signal through the preamble of the data strobe signal.

Abstract: A semiconductor integrated circuit includes a first pad configured to receive a first voltage, a second pad configured to receive a second voltage, an internal voltage generation circuit configured to generate a third voltage having the same voltage level as the first voltage in response to the second voltage during a test mode, and an internal circuit configured to perform a normal operation using the first voltage and the second voltage during a normal mode and perform a test operation using the second voltage and the third voltage during the test mode.

Abstract: Various embodiments of a semiconductor system, a semiconductor memory, and a method of controlling the same are disclosed. In one exemplary embodiment, the semiconductor memory may include a first circuit area configured to perform an operation corresponding to a general operation command and a second circuit area configured to provide the general operation command to the first circuit area. The second circuit area may be configured to determine whether the semiconductor memory is selected to perform the operation based on unique identification information and target identification information allocated to the semiconductor memory.

Abstract: A semiconductor integrated circuit includes a first pad configured to receive a first voltage, a second pad configured to receive a second voltage, an internal voltage generation circuit configured to generate a third voltage having the same voltage level as the first voltage in response to the second voltage during a test mode, and an internal circuit configured to perform a normal operation using the first voltage and the second voltage during a normal mode and perform a test operation using the second voltage and the third voltage during the test mode.

Abstract: A semiconductor memory device is capable of outputting a preset logic level through an EDC pin according to an operation mode during an initial operation, and providing a stable operation according to the specification of the semiconductor memory device just after the input of a data clock (WCK). The semiconductor memory device includes an output circuit configured to output a synchronous data in response to a data clock when the data clock is enabled, and output an asynchronous data when the data clock is disabled, and a data clock detection circuit configured to control outputting the asynchronous data by checking whether the data clock is in a stable state or not.