Abstract: A redundancy circuit of a semiconductor memory apparatus includes an enable signal generation unit configured to have a plurality of enable fuses corresponding to a first mat grouping information signal and a second mat grouping information signal and enable an enable signal when at least one of the plurality of enable fuses is cut and a mat grouping information signal corresponding to the cut fuse is inputted; a fail address setting control block configured to select the first mat grouping information signal or the second mat grouping information signal depending upon whether an enable fuse corresponding to the first mat grouping information signal is cut or not, and generate fail setting addresses; and a comparison section configured to compare the fail setting addresses with real addresses and generate a redundancy address.

Abstract: A semiconductor memory device includes a clock supply portion for providing an external clock to the interior of the memory device, a clock transfer portion for transferring the clock from the clock supply portion to each of elements in the memory device and data output portions for outputting data in synchronism the clock from the clock transfer portion, wherein the clock from the clock supply portion to the clock transfer portion swings at a current mode logic (CML) level.

Abstract: A semiconductor memory apparatus capable of detecting an error in data input/output includes a memory cell block including a plurality of memory cells. A data input unit receives data from outside the semiconductor memory apparatus and performs predetermined signal processing to record the received data in the memory cell block. A first global data line is connected between the data input unit and the memory cell block. A data output unit receives data from the memory cell block and performs predetermined signal processing to output the received data to the outside of the semiconductor memory apparatus. A second global data line is connected between the memory cell block and the data output unit. A multiplexer selectively outputs data from the first or second global data line in response to a control signal.

Abstract: A data output circuit of a semiconductor memory apparatus includes: a control unit that outputs a first standby instruction signal, a second standby instruction signal, a first output instruction signal, and a second output instruction signal in response to an input of a standby instruction signal, an output instruction signal, a first test signal, and a second test signal; a first output driver that causes first data to be output or to enter a standby state according to whether or not the first standby instruction signal or the first output instruction signal is enabled; and a second output driver that causes second data to be output or to enter a standby state according to whether or not the second standby instruction signal or the second output instruction signal is enabled.

Abstract: A semiconductor memory device includes a first buffering unit configured to buffer a first clock for an address signal and a command to be input in synchronization with the first clock, a second buffering unit configured to buffer a second clock for a data signal to be in synchronization with the second clock to output a buffered second clock having the same frequency as the first clock, a data output circuit configured to output an internal data in response to the buffered second clock, a delay unit configured to delay the buffered second clock by a predetermined time, and a phase detector configured to detect a phase difference of an output clock of the delay unit and the output clock of the first buffering unit, and to output the detection result.

Abstract: A semiconductor device includes a plurality of data driving units, each configured to drive a corresponding data output pad by a power supply voltage supplied through a power supply voltage input pin and a ground voltage supplied through a ground voltage input pin, in response to a corresponding bit of a data code, a pattern sensing unit configured to sense a bit pattern of the data code and generate a pattern sensing signal, and a phantom driving unit configured to form a current path between the power supply voltage input pin and the ground voltage input pin and to drive the current path by a driving force determined in response to the pattern sensing signal.

Abstract: A data input apparatus includes: a phase detector comparing a phase of a data strobe signal with a phase of a clock signal to output a first phase comparison signal and a second phase comparison signal. A first delay controller determines whether a first data input strobe signal is delayed to output the determined signal as a second data input strobe signal in response to the first phase comparison signal. An internal clock synchronizer synchronizes first aligned data and second aligned data with the clock signal in response to the second data input strobe signal, to output the synchronized first and second data as first internal output data and second internal output data, respectively. A second delay controller determines whether the first internal output data and the second internal output data is delayed in response to the second phase comparison signal, to output the first internal output data and the second internal output data as first output data and second output data, respectively.

Abstract: A semiconductor, which includes a first phase detecting unit configured to detect a phase of a second clock on the basis of a phase of a first clock, and generate a first detection signal corresponding to a result of the detection, a second phase detecting unit configured to detect a phase of a delayed clock, which is generated by delaying the second clock by a predetermined time, on the basis of the phase of the first clock, and generate a second detection signal corresponding to a result of the detection, and a logic level determining unit configured to determine a logic level of a feedback output signal according to the first detection signal, the second detection signal and the feedback output signal.

Abstract: A semiconductor memory device is capable of generating a desired output enable signal without increasing an initial count value and bit number and generating a desired final output enable signal, without unnecessary reset operations, by reflecting column address strobe (CAS) latency information on an external clock count value. The semiconductor memory device includes a first output enable signal generating unit and a final output enable signal generating unit. The first output enable signal generating unit is configured to compare a first count value, which is obtained by counting a delay locked loop (DLL) clock, to a second clock count value, which is obtained by counting an external clock until a read command is input, and to output a first output enable signal. The final output enable signal generating unit is configured to output a final output enable signal generated by shifting the first output enable signal, according to CAS latency.

Abstract: A memory module is configured to include a first rank installed with a first memory chip and a second rank installed with a second memory chip. When the first and second memory chips are in a first data output mode, the first memory chip is configured to externally output lower order data of a plurality of data via lower data output pins. Also, when the first and second memory chips are in the first data output mode, the second memory chip is configured to externally output data that has the same order as the lower order data output by the first memory chip via upper data output pins.

Abstract: A multi-phase pulse generator provides an even number of pulse signals of same phase difference and pulse signals of higher frequency by applying a negative delay concept. The multi-phase pulse generator includes a first delay block with first unit blocks which have a first negative delay property respectively and of which an even number is ring-coupled; and a second delay block including second unit blocks which have a second negative delay property respectively and of which even number is ring-coupled. The number of the first unit block and the number of the second unit block are the same. A plurality of output nodes is formed based on one-to-one sharing between the first unit block and the second unit block having output signals of different level. Each output node outputs a pulse generated by racing the output signals of different level to each other which are provided from the first unit block and the second unit block connected to the each output node.

Abstract: A semiconductor memory apparatus includes a first data selection section inputted with the first data and second data and output one of the first data and the second data as first selection data in response to an address signal, a second data selection section inputted with the second data and the first selection data and output one of the second data and the first selection data as second selection data depending upon an input and output mode, and a data output section configured to be inputted with the first and second selection data and output first and second output data.

Abstract: A semiconductor memory apparatus having a write training function includes a storage unit that stores write data or read data output from a memory cell block and outputs data according to an output control signal, and a control unit that controls the output control signal to be generated at different timings according to whether or not a write training signal is activated.

Abstract: A circuit which can reduce time taken by a clock alignment training operation in a semiconductor memory device is provided. The semiconductor memory device, which includes: a clock inputting unit configured to receive a system clock and a data clock; a clock dividing unit configured to divide a frequency of the data clock to generate a data division clock, wherein the clock dividing unit determines a phase of the data division clock in response to an inversion division control signal; a phase dividing unit configured to generate a plurality of multiple phase data division clocks having respective predetermined phase differences in response to the data division clock; a data serializing unit configured to serialize predetermined parallel pattern data in correspondence with the multiple phase data division clocks; and a signal transmitting unit configured to transmit an output signal of the data serializing unit to the outside.

Abstract: A semiconductor, which includes a first phase detecting unit configured to detect a phase of a second clock on the basis of a phase of a first clock, and generate a first detection signal corresponding to a result of the detection, a second phase detecting unit configured to detect a phase of a delayed clock, which is generated by delaying the second clock by a predetermined time, on the basis of the phase of the first clock, and generate a second detection signal corresponding to a result of the detection, and a logic level determining unit configured to determine a logic level of a feedback output signal according to the first detection signal, the second detection signal and the feedback output signal.

Abstract: A semiconductor memory device including a first clock transmission path configured to receive a source clock swinging at a CML level through a clock transmission line in response to an enable signal, and to convert the source clock into a clock swinging at a CMOS level. The device also includes a second clock transmission path configured to convert the source clock in a clock swinging at a CMOS level in response to the enable signal, and to output the converted clock through the clock transmission line and a data output unit configured to output data in response to output clocks of the first and second clock transmission lines.

Abstract: A semiconductor memory device includes a clock supply portion for providing an external clock to the interior of the memory device, a clock transfer portion for transferring the clock from the clock supply portion to each of elements in the memory device and data output portions for outputting data in synchronism the clock from the clock transfer portion, wherein the clock from the clock supply portion to the clock transfer portion swings at a current mode logic (CML) level.

Abstract: There is provided a semiconductor memory device, including: a plurality of bank groups each comprising a plurality of banks; a plurality of data pads grouped by a predetermined number for receiving data for the bank groups, wherein the data pads are divided into a plurality of first pad groups receiving data and a plurality of second pad groups selectively receiving data according to a data input/output option value; a first driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the first pad group; a second driving unit configured to drive data input via the second pad group to transfer the data input via the second pad group to the bank group corresponding to the second pad group; and a third driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the second pad group in response to the data input/output option va

Abstract: A data output circuit of a semiconductor memory apparatus includes: a control unit that outputs a first standby instruction signal, a second standby instruction signal, a first output instruction signal, and a second output instruction signal in response to an input of a standby instruction signal, an output instruction signal, a first test signal, and a second test signal; a first output driver that causes first data to be output or to enter a standby state according to whether or not the first standby instruction signal or the first output instruction signal is enabled; and a second output driver that causes second data to be output or to enter a standby state according to whether or not the second standby instruction signal or the second output instruction signal is enabled.

Abstract: A memory apparatus includes: a memory cell block; a data input part that performs signal processing to transmit general data and mask information input to the semiconductor memory apparatus to the memory cell block, and outputs the processed data and information; a broadband data line connected between the data input part and the memory cell block; a plurality of registers connected to the broadband data line that writes mask information transmitted through the broadband data line; and a multiplexer that selects mask information from one of the plurality of registers in response to a mask information selection signal, and outputs the selected mask information to the memory cell block.