Abstract: An embodiment device includes an input module including a motor configured to generate a rotational force, an output module configured to receive power from the input module to be rotatable, and a connection module having a first side coupled to the input module and a second side, opposite the first side, coupled to the output module, wherein the connection module is configured to transmit the power from the input module to the output module.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A display device includes a base substrate, a pixel defining layer disposed on the base substrate and including a first opening, a light emitting structure disposed in the first opening of the pixel defining layer, a thin film encapsulation layer disposed on the light emitting structure, a touch electrode disposed on the thin film encapsulation layer, an insulating pattern disposed on the touch electrode and including a second opening which overlaps the first opening, and a high refractive layer disposed on the insulating pattern, the high refractive layer including a plurality of grid patterns disposed on a top surface of the high refractive layer, and a refractive index higher than a refractive index of the insulating pattern.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A current supply circuit according to the present disclosure may include a voltage/current converter configured to convert, into a data current, a data voltage received from a data driving circuit and a first current mirror circuit configured to mirror the data current so that a light-emitting diode (LED) current flows into an LED array. The data current may be adjusted based on a greyscale value of the LED array.

Abstract: A light source includes a controller configured to turn on or off a plurality of light sources depending on a light period. The controller can be configured to turn on the light sources during each of a plurality of light periods such that the light sources emit a light having a spectrum with a plurality of peaks toward the plant. At least one light period can include a first period and a second period and the first period preceding or following the second period. The controller can adjust the spectrum of the light between the first period and the second period and/or during different light periods.

Abstract: An apparatus for detecting the location of a foreign material of a low-voltage battery cell includes a first and second measurement electrodes respectively on a positive electrode and a negative electrode of the battery cell to measure a leakage current; a current measuring device to measure a leakage current; and a data processor to process a measured leakage current data. The first and second measurement electrodes each have a structure in which a plurality of unit electrodes to which coordinate information is assigned are collected. The current measuring device measures a leakage current flowing through the unit electrode of the first measurement electrode and the unit electrode of the second measurement electrode that have the same coordinate information. The data processing part checks the location of a foreign material from a leakage current data through a coordinate information of a unit electrode having a large leakage current.

Abstract: A display device includes a processor which supplies grayscale data in active periods of frame periods and stops supply of the grayscale data in blank periods of the frame periods, a timing controller which generates a change signal when a difference between a first blank period of a first frame period and a second blank period of a second frame period is greater than a threshold value, a power supply which supplies a first power voltage having a voltage level changed based on the change signal to a first power line, and pixels commonly connected to the first power line.

Abstract: A Computation-in-Memory (CiM) device includes a plurality of first synaptic cells disposed between row lines and column lines and configured to output read currents to the column lines, the read currents corresponding to pulse signals applied through the row lines; a plurality of second synaptic cells disposed between the row lines and two or more reference column lines and configured to output two or more reference read currents to the reference column lines, the reference read currents corresponding to the pulse signals applied through the row lines; and a column control circuit configured to output digital data by compensating for the read currents output through the column lines, based on the reference read currents output through the reference column lines.

Abstract: A display device, includes: a scan driver configured to sequentially supply scan signals having a turn-on level to the first scan line and the second scan line during a first period and to concurrently supply scan signals having a turn-on level to the first scan line and the second scan line during a second period after the first period, wherein: a mask period corresponds to a difference between a start point of the second period and a start point of the first period in a next frame period, a first frame period and a second frame period have different mask periods, a third frame period between the first frame period and the second frame period has a same mask period as the first frame period, and a fourth frame period between the first frame period and the second frame period has a same mask period as the second frame period.

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

Abstract: A fluid supply nozzle for semiconductor substrate treatment, which supplies a treatment liquid in which a plurality of solutions are mixed to a semiconductor substrate, includes a nozzle body configured to mix the plurality of solutions to form a treatment liquid when the plurality of solutions are supplied into an inner space of the nozzle body, the nozzle body having a shape with an open upper portion, a solution supply channel with a plurality of solution supply pipes for supplying the plurality of solutions to the inner space, a solution guide device configured to guide the plurality of solutions and generate a rotary current or an eddy current to mix the plurality of solutions, and a rotary cartridge configured to accelerate the mixing of the plurality of solutions to generate a homogeneous treatment liquid.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: A semiconductor apparatus includes an internal clock generating circuit, a stop controlling circuit, and a data clock generating circuit. The internal clock generating circuit generates, based on a reference clock signal, a plurality of internal clock signals. The stop controlling circuit generates a stop signal and a clock level signal based on the reference clock signal and the plurality of internal clock signals. The data clock generating circuit generates a data clock signal and a complementary data clock signal based on the plurality of internal clock signals, the stop signal, and the clock level signal.

Abstract: A display device includes: a plurality of pixel blocks each including a plurality of pixels; a scan driver supplying a scan signal to the scan lines and to supply a control signal to the control lines; a data driver supplying an image data voltage or a low grayscale data voltage to the data lines; and a power supply supplying a reference voltage to the pixels, wherein the pixels are configured to receive the image data voltage during a first scan period of a frame, and to receive the low grayscale data voltage during a second scan period of the frame, and the reference voltage supplied to a first pixel row of at least one of the pixel blocks in the first scan period is different from the reference voltage supplied to a last pixel row of at least one of the pixel blocks in the first scan period.

Abstract: The present invention relates to a method for producing a cell having a genetic defect corrected, and a cell therapy agent comprising the cell, and, more particularly, to a method for producing a cell and a cell therapy agent comprising the cell, which comprise a method for isolating a cell from an individual, producing a chemically derived progenitor cell by processing a compound, and then correcting a mutant gene ex vivo. The cell therapy agent of the present invention has significantly less side effects such as an off-target effect and tumor generation, and has shown a Tyrosinemia type I treatment effect that is more significant than when a simple cell is transplanted, and thus, the cell therapy agent is expected to be widely usable in treatment fields for diseases caused by gene mutation, including Tyrosinemia type I.

Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

Abstract: A display device, includes: a scan driver configured to sequentially supply scan signals having a turn-on level to the first scan line and the second scan line during a first period and to concurrently supply scan signals having a turn-on level to the first scan line and the second scan line during a second period after the first period, wherein: a mask period corresponds to a difference between a start point of the second period and a start point of the first period in a next frame period, a first frame period and a second frame period have different mask periods, a third frame period between the first frame period and the second frame period has a same mask period as the first frame period, and a fourth frame period between the first frame period and the second frame period has a same mask period as the second frame period.

Abstract: A semiconductor apparatus includes an internal dock generating circuit, a stop controlling circuit, and a data dock generating circuit. The internal clock generating circuit generates, based on a reference clock signal, a plurality of internal clock signals. The stop controlling circuit generates a stop signal and a dock level signal based on the reference clock signal and the plurality of internal clock signals. The data clock generating circuit generates a data clock signal and a complementary data clock signal based on the plurality of internal clock signals, the stop signal, and the clock level signal.

Abstract: A method of forming a power semiconductor device is provided. The method includes the step of providing a semiconductor substrate. The semiconductor substrate has an active region and a termination region surrounding the active region. An epitaxial layer is disposed on the semiconductor substrate. The etching process is conducted to the epitaxial layer to form a first trench and a second trench. The first trench is disposed at the active region and the second trench is disposed at the termination region. A second trench width of the second trench is less than a first trench width of the first trench. An oxidation process is conducted to form a dielectric structure. The dielectric structure has a first dielectric layer disposed on the first trench and a dielectric area fully covers a trench area of the second trench.