Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: A method and apparatus to search a codebook including pulses that model a predetermined component of a speech signal. The method includes the operations of selecting a predetermined number of paths corresponding to a predetermined number of pulse locations that are most consistent with the predetermined component, from among paths corresponding to pulse locations of a predetermined pulse location set allocated to at least one branch that connects one state of a predetermined Trellis structure to another state, performing the path selecting operation on each of states other than the one state, and selecting a path corresponding to pulse locations that are most consistent with the predetermined component, from among paths including the selected paths, wherein each path corresponds to a union of plural tracks of an Algebraic codebook. Accordingly, the number of calculations required during a codebook search is reduced.

Abstract: Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A method and apparatus to search a codebook including pulses that model a predetermined component of a speech signal. The method includes the operations of selecting a predetermined number of paths corresponding to a predetermined number of pulse locations that are most consistent with the predetermined component, from among paths corresponding to pulse locations of a predetermined pulse location set allocated to at least one branch that connects one state of a predetermined Trellis structure to another state, performing the path selecting operation on each of states other than the one state, and selecting a path corresponding to pulse locations that are most consistent with the predetermined component, from among paths including the selected paths. Accordingly, the number of calculations required during a codebook search is reduced.

Abstract: A method and apparatus to search a codebook including pulses that model a predetermined component of a speech signal. The method includes the operations of selecting a predetermined number of paths corresponding to a predetermined number of pulse locations that are most consistent with the predetermined component, from among paths corresponding to pulse locations of a predetermined pulse location set allocated to at least one branch that connects one state of a predetermined Trellis structure to another state, performing the path selecting operation on each of states other than the one state, and selecting a path corresponding to pulse locations that are most consistent with the predetermined component from among paths including the selected paths, wherein each path corresponds to a union of plural tracks of an algebraic codebook. Accordingly, a number of calculations required during a codebook search is reduced.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.

Abstract: The present invention relates to a method for inhibiting angiogenesis using a peroxiredoxin II (Prx II) inhibitor, and a method for preparing angiogenesis-inhibiting medicines using Prx II inhibitor. According to the present invention, the inhibitor of Prx II gene expression or Prx II protein activity increases oxidative inactivation of VEGF receptor tyrosine kinase (RTK) to reduce VEGF signaling, thereby screening a novel angiogenesis inhibitor. Therefore, the method of the present invention can be used for the prevention or treatment of various diseases, ailments, and conditions related to angiogenesis.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating diseases related to abnormal proliferation of cells, comprising a cytoplasmic heat shock protein (Hsp)60 kDa inhibitor as an active ingredient, and to a screening method and a kit using the composition. According to the present invention, substances which inhibit expression of cytoplasmic Hsp 60 genes or inhibit activity of cytoplasmic Hsp 60 or inhibit binding between cytoplasmic Hsp 60 and IKK protein prevent interaction between cytoplasmic Hsp 60 and IKK complexes to make NF-?B path inactive, and thus induce apoptosis. Therefore, the substances can be valuably used in preventing or treating diseases related to abnormal proliferation of cells, such as cancer, inflammatory diseases or hyperproliferative vascular diseases.

Abstract: Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

Abstract: Apparatus and method for seasoning an idled deposition chamber prior to growing an epitaxial layer. A dopant containing source gas, such as a Mg-containing source gas, is introduced to an MOCVD chamber after the chamber has been idled and prior to the chamber growing a film containing the dopant on a substrate. In a multi-chambered deposition system, a non-p-type epitaxial layer of an LED film stack is grown over a substrate in a first deposition chamber while a seasoning process is executed in a second deposition chamber with a p-type dopant-containing source gas. Subsequent to the seasoning process, a p-type epitaxial layer of the LED film stack is grown on the substrate in the second deposition chamber with improved control of p-type dopant concentration in the p-type epitaxial layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: Methods and apparatus for cleaning a showerhead and other chamber components used in a chemical vapor deposition process are provided. The methods comprise establishing a thermal gradient in a chamber having a showerhead assembly with deposited material thereon, providing a halogen containing cleaning gas to the chamber, wherein the thermal gradient causes a turbulent or convective flow of the cleaning gas, removing the coating of deposited material from the showerhead assembly by reacting the halogen containing cleaning gas with the deposited material, and exhausting reaction by-products from the chamber.

Abstract: Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.