Abstract: Provided is a ferroelectric semiconductor device including a source and a drain having different polarities. The ferroelectric semiconductor may include a ferroelectric including zirconium oxide (ZrO2), hafnium oxide (HfO2), and/or hafnium-zirconium oxide (HfxZr1-xO, 0<x<1). The semiconductor device may have memory-like characteristics.

Abstract: An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.

Abstract: Disclosed herein is a laundry machine. More particularly, a laundry machine for generating steam by an induction heater and a control method thereof are disclosed. According to an embodiment of the present disclosure, provided is a method of controlling a laundry machine including a tub, a drum rotatably arranged in the tub to accommodate an object and provided with a through hole on an outer circumferential surface thereof, and an induction heater provided to the tub, and configured to perform a steam operation. The steam operation may include heating a heating surface of the drum facing the induction heater by driving the induction heater, spraying, through a spray nozzle, water toward the heating surface heated in the heating operation, and rotating the drum such that the steam is introduced into the drum through the through hole in a space between the tub and the drum.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.

Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

Abstract: Disclosed is a method and system for international mobile equipment identity (IMEI) verification and unauthorized terminal detection based on contents of control plane messages exchanged in a process of a terminal that accesses a commercial network in a mobile communication network and the method includes constructing a fingerprint database for each terminal using contents of a control plane message generated in a process of a terminal that accesses a commercial network and a response to the control plane message; and verifying IMEI for an arbitrary terminal that accesses the commercial network using the fingerprint database.

Abstract: A display device includes: a display panel configured to display an image; an input sensing substrate on the display panel; a flexible circuit film coupled to one side of an upper surface of the input sensing substrate; a step compensation film spaced apart from the flexible circuit film on the upper surface of the input sensing substrate; and an anti-reflection film on the flexible circuit film and the step compensation film, wherein the step compensation film comprises: a compensation layer on the upper surface of the input sensing substrate, and an overcoat layer between the compensation layer and the input sensing substrate.

Abstract: Disclosed herein are a laundry apparatus and a control method thereof. According to an embodiment, the method of controlling a laundry apparatus including a tub, a drum, an induction heating module mounted on the tub to heat the drum, and a circulation pump configured to pump wash water from the tub to the drum includes supplying wash water into the tub through a water supply valve, circulating the wash water by operating the circulation pump and performing fabrics soaking by driving the drum after termination of the water supply, performing heating by driving the induction heating module after termination of the fabrics soaking, and performing washing by driving the drum after termination of the heating, wherein the heating is performed while a water level of the wash water is lower than a lowest end of the drum, the heating including heating the drum, the wash water, and fabrics.

Abstract: Disclosed is a laundry treatment apparatus including a drum formed of a metal material and provided to accommodate laundry therein, an induction module spaced apart from a circumferential surface of the drum and provided to heat the circumferential surface of the drum via a magnetic field that is generated when current is applied to a coil, and a lifter formed of a metal material and provided in the drum to move the laundry inside the drum when the drum rotates. The lifter is provided so as to be recessed in a direction in which a distance between the induction module and the lifter, which face each other, increases.

Abstract: Provided are a vertical transistor and a method of manufacturing the same. The vertical transistor includes a substrate, a lower electrode on the substrate and including a metal material, a carbon thin film being conductive and on the lower electrode, an oxide semiconductor layer on the carbon thin film, a gate electrode apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, and an upper electrode on the oxide semiconductor layer, wherein the lower electrode. The carbon thin film, the oxide semiconductor layer, and the upper electrode are arranged in a direction perpendicular to the substrate.

Abstract: Disclosed is a laundry treatment apparatus configured to directly heat a drum containing laundry therein. The laundry treatment apparatus comprising: a cabinet forming an external appearance of the laundry treatment apparatus; a tub provided in the cabinet; a drum configured to rotate within the tub and to contain laundry therein, the drum being formed of a metallic material; an induction module provided at an outer surface of the tub and configured to heat the drum within the tub via induction by generating a magnetic field; and wherein the outer surface of the tub comprises at least one mounting portion that is configured to mount the induction module, with at least part of the at least one mounting portion being arranged radially closer to a rotational axis of the drum than a remaining portion of the outer surface of the tub.

Abstract: A memory device includes a memory cell array, a row address decoder configured to generate a plurality of main word line driving signals and a plurality of sub word line driving signals, based on an odd signal representing that a main word line driving signal driving an odd word line is activated, generate a plurality of encoded sub word line driving signals used for driving a target word line by outputting the plurality of sub word line driving signals in a first order, and, based on an even signal representing that a main word line driving signal driving an even word line is activated, generate the plurality of encoded sub word line driving signals by outputting the plurality of sub word line driving signals in a second order, and a word line driving circuit configured to drive the target word line at a first voltage level or a second voltage level.

Abstract: A mobile terminal comprises a body including a first frame and a second frame slidably coupled to a rear surface of the first frame in a first direction or a second direction; a flexible display unit including a front portion located on a front surface of the body, a rear portion located on a rear surface of the body, and a side portion connecting the front portion with the rear portion and surrounding one side of the body; a plurality of reinforcing ribs protruded from a rear surface of the first frame and extended in the first direction; and a plurality of supports protruded from a front surface of the second frame and located between the respective reinforcing ribs. The mobile terminal may enhance usability and portability by varying its size.

Abstract: Disclosed is an operating method of an electronic device which includes receiving a design layout for manufacturing the semiconductor device, generating a first layout by performing machine learning-based process proximity correction (PPC), generating a second layout by performing optical proximity correction (OPC), and outputting the second layout for a semiconductor process. The generating of the first layout includes generating a first after cleaning inspection (ACI) layout by executing a machine learning-based process proximity correction module on the design layout, generating a second after cleaning inspection layout by adjusting the design layout based on a difference of the first after cleaning inspection layout and the design layout and executing the process proximity correction module on the adjusted layout, and outputting the adjusted layout as the first layout, when a difference between the second after cleaning inspection layout and the design layout is smaller than or equal to a threshold value.

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

Abstract: A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.

Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

Abstract: An oxide semiconductor transistor includes: an insulating substrate including a trench; a gate electrode in the trench; an oxide semiconductor layer on a surface of the insulating substrate, the surface exposed through the trench; and a ferroelectric layer between the gate electrode and the oxide semiconductor layer, wherein the oxide semiconductor layer may include a source region and a drain region which are on the insulating substrate outside the trench and are apart from each other with the gate electrode therebetween.

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.