Abstract: A touch sensor may include a substrate and may include electrode units, first demultiplexers, second demultiplexers, and driving pads all located on the substrate. The electrode units each may include a plurality of electrode groups, the electrode groups each including a plurality of touch electrodes. The first demultiplexers each may include a plurality of sub-demultiplexers and each may be electrically connected to a corresponding one of the electrode units. Each of the sub-demultiplexers of a first demultiplexer may be electrically connected to a corresponding one of the electrode groups of a corresponding electrode unit. The second demultiplexers may be connected between the first demultiplexers and the driving pads.

Abstract: In a method for recovering lithium hydroxide from a lithium secondary battery, cathode powder is prepared from a cathode of the lithium secondary battery. A cathode active material mixture is prepared by mixing the cathode powder with a calcium compound. The cathode active material mixture is reduced to form a preliminary precursor mixture. A lithium precursor is recovered from the preliminary precursor mixture. Therefore, a lithium precursor can be obtained with high purity without a complicated leaching process or an additional process, which result from a wet-based acid solution process.

Abstract: A lend moving apparatus includes a circuit board including a mounting groove, an image sensor arranged within the mounting groove of the circuit board, and a first epoxy arranged within the mounting groove. The mounting groove includes a first side surface and a second side surface that face each other, and a third side surface and a fourth side surface that face each other. The circuit board includes at least one application groove provided on the first side surface and/or the second side surface of the mounting groove. The at least one application groove includes an opening opened toward the upper surface of the circuit board. At least a portion of the first epoxy is arranged in the at least one application groove.

Abstract: Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

Abstract: The present disclosure relates to an expanded foam solution for forming a thermosetting expanded foam having excellent flame retardancy produced using the same. According to the present disclosure, nanoclay is mixed with a polyol-based compound using ultrasonic waves, an isocyanate-based compound is added, and a trimerization catalyst or an isocyanurate compound is mixed with the polyol-based compound so that an isocyanurate structure is formed.

Abstract: The Zero User Interface (UI)-based automatic speech translation system and method can solve problems such as the procedural inconvenience of inputting speech signals and the malfunction of speech recognition due to crosstalk when users who speak difference languages have a face-to-face conversation. The system includes an automatic speech translation server, speaker terminals and a counterpart terminal. The automatic speech translation server selects a speech signal of a speaker among multiple speech signals received from speaker terminals connected to an automatic speech translation service and transmits a result of translating the speech signal of the speaker into a target language to a counterpart terminal.

Abstract: Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

Abstract: A method and system for maintaining command queue order are disclosed. According to certain embodiments, commands are read from a host, storing command queue IDs in an array that will keep the queue IDs in order. After having the queue IDs stored in the array, the commands are processed in the data storage device (DSD). After processing, the commands are provided to a completion order adjustment module that will order the commands in queue ID order for sequential commands to be returned to the host. In certain embodiments, for a sequential command, other commands of the same sequence are searched for the array and ordered with the sequential command. If a particular command of the sequence is not found, the completion order adjustment module will wait to transfer the sequence until each command of the sequence is found. For commands not part of a sequence, these commands are transferred to the host.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed herein is a mobile cleaning device with a sterilization function.

Abstract: A semiconductor memory device includes a memory bank arranged into first through nth split regions containing at least one memory cell sub-array within each split region, and first through nth global input/output (GIO) split lines electrically coupled to the first through nth split regions. First through n-lth connection control transistors are provided, which have gate terminals responsive to respective connection control signals. The first connection control transistor is configured to electrically short the first and second GIO split lines together when enabled by a corresponding connection control signal, and the n-1th connection control transistor is configured to electrically short the n-1th and nth GIO split lines together when enabled by a corresponding connection control signal. A GIO sense amplifier is provided, which is electrically coupled to the memory bank.

Abstract: An apparatus for estimating a camera pose according to an embodiment of the present disclosure includes a similar image searcher, a clusterer, and an estimator. The similar image searcher searches for a plurality of images similar to an input image, from among a plurality of previously-stored images, based on the input image. The clusterer creates a cluster including at least some similar images meeting predetermined conditions, from among the plurality of similar images, based on viewpoint data tagged to each of the plurality of similar images. The estimator estimates a pose of a camera that has generated the input image, based on the cluster.

Abstract: Provided is a display device. The display device includes a first base portion, a second base portion facing the first base portion, a light emitting layer disposed on one surface of the first base portion and emitting first light, a first wavelength conversion pattern disposed on the light emitting layer and converting the first light into second light having a different wavelength from the first light, a first color filter overlapping the first wavelength conversion pattern on one surface of the second base portion and spaced apart from the first wavelength conversion pattern, and an air layer interposed between the first wavelength conversion pattern and the first color filter.

Abstract: An operating method of a memory device, comprising: entering self-refresh section, updating a counting code by counting an edge of a reference cycle signal, first activating an operation control signal for the self-refresh section when a temperature application code has an initialized value in response to the counting code, updating the temperature application code after the operation control signal is first activated, second activating the operation control signal in response to the counting code based on the updated temperature application code, exiting from the self-refresh section, and initializing the counting code and the temperature application code.

Abstract: Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

Abstract: A Merkle tree-based data management method may comprise: aligning data into two-dimensional square matrix; calculating a hash value of each node of the two-dimensional square matrix; calculating hash values of each row of the two-dimensional square matrix; generating an additional column with nodes having the hash values of each row; calculating hash values of each column of the two-dimensional square matrix; generating an additional row with nodes having hash values of each column; and calculating a Merkle root by concatenating the hash values of the additional column and the hash values of the additional row.

Abstract: Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

Abstract: Disclosed is a toilet bowl bidet capable of preventing droplets from splashing, the toilet bowl bidet including a washing water supply hose (150) having an air pump (180) disposed at an outlet side of a washing water valve (160) and configured to mix air into washing water supplied to a bidet nozzle unit (140), wherein the bidet nozzle unit (140) includes first and second washing water passages (141) and (143) respectively including bidet nozzles (142) and (144), a third washing water passage (145) including a shield nozzle (146), and a distributor 148 configured to guide the washing water to a selected one of the first, second, and third washing water passages (141), (143), and (145). A controller (170) is configured to, when a flushing operation is performed, control the distributor (148) to supply air-mixed washing water to the third washing water passage (145) and open the washing water valve (160).

Abstract: The present disclosure relates to an expanded foam solution for forming a thermosetting expanded foam having excellent flame retardancy produced using the same. According to the present disclosure, nanoclay is mixed with a polyol-based compound using ultrasonic waves, an isocyanate-based compound is added, and a trimerization catalyst or an isocyanurate compound is mixed with the polyol-based compound so that an isocyanurate structure is formed.

Abstract: Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.