Abstract: A process for producing an acrylic ester compound includes reacting in the presence of alkene an alcohol represented by the formula (1), wherein R1 represents a hydrogen atom, a fluorine atom, a straight-chain or branched hydrocarbon group, a fluorine-containing alkyl group, or an aromatic or aliphatic ring and optionally contains oxygen, sulfur or a carbonyl bond, with an acid halide represented by the formula (2), wherein R2 represents a hydrogen atom, a halogen atom, a hydrocarbon group, or a fluorine-containing alkyl group, and X represents a halogen atom.

Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.

Abstract: The present invention relates to a polymerizable monomer represented by the general formula (1), wherein R1 is a hydrogen atom, a halogen atom, a hydrocarbon group or a fluorine-containing alkyl group; R2 is a straight-chain or branched alkyl group, a cyclic alkyl group, an aromatic group, or a substituent having at least two of these groups, the R2 being optionally partially fluorinated; R3 is a hydrogen atom, a hydrocarbon group that is optionally branched, a fluorine-containing alkyl group, or a cyclic group having an aromatic or alicyclic structure, the R3 optionally containing a bond of an oxygen atom or carbonyl group; and n is an integer of 1-2.

Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000–500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.

Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F.

Abstract: The present invention relates to a polymerizable acrylate compound represented by the general formula (1): (in the formula, R1 represents a hydrogen atom, halogen atom, hydrocarbon group or fluorine-containing alkyl group, R2 and R3 may be different or identical, and each of them independently is a hydrogen atom, fluorine atom, hydrocarbon group optionally branched, fluorine-containing alkyl group, aromatic group, or cyclic structure containing an aliphatic group and may contain oxygen or carbonyl bond) and a polymer compound obtained by using the same.

Abstract: The present invention relates to a polymerizable monomer represented by the general formula (1), wherein R1 is a hydrogen atom, a halogen atom, a hydrocarbon group or a fluorine-containing alkyl group; R2 is a straight-chain or branched alkyl group, a cyclic alkyl group, an aromatic group, or a substituent having at least two of these groups, the R2 being optionally partially fluorinated; R3 is a hydrogen atom, a hydrocarbon group that is optionally branched, a fluorine-containing alkyl group, or a cyclic group having an aromatic or alicyclic structure, the R3 optionally containing a bond of an oxygen atom or carbonyl group; and n is an integer of 1–2.

Abstract: A process for producing an ?-substituted acrylic acid ester represented by the formula [1], wherein each of R1 and R2 is independently a hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, fluoromethyl group, difluoromethyl group, trifluoromethyl group, or perfluoroethyl group, includes reacting an ?-substituted acrylic acid anhydride represented by the formula [7], with 1,1-bis(trifluoromethyl)-1,3-diol represented by the formula [2].

Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: The present invention relates to a top coat composition, which is characterized in that it is applied to a photoresist top surface by using a polymer containing at least one structure represented by the formula [1], [2] or [3]. It is possible to produce a top coat composition solution by dissolving this top coat composition in an organic solvent. These top coat composition and top coat composition solution can be used in immersion lithography.

Abstract: A copolymer of an acrylate monomer containing fluorine at ?-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: A process for producing an acrylic ester compound includes reacting in the presence of alkene an alcohol represented by the formula (1), wherein R1 represents a hydrogen atom, a fluorine atom, a straight-chain or branched hydrocarbon group, a fluorine-containing alkyl group, or an aromatic or aliphatic ring and optionally contains oxygen, sulfur or a carbonyl bond, with an acid halide represented by the formula (2), wherein R2 represents a hydrogen atom, a halogen atom, a hydrocarbon group, or a fluorine-containing alkyl group, and X represents a halogen atom.

Abstract: A process for producing an ?-substituted acrylic acid ester represented by the formula [1], wherein each of R1 and R2 is independently a hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, fluoromethyl group, difluoromethyl group, trifluoromethyl group, or perfluoroethyl group, includes reacting an ?-substituted acrylic acid anhydride represented by the formula [7], with 1,1-bis(trifluoromethyl)-1,3-diol represented by the formula [2].

Abstract: A process for producing an ?-substituted acrylic norbornanyl compound represented by the formula [3] includes reacting an ?-substituted acrylic acid anhydride represented by the formula [1] with a substituted norbornanyl alcohol represented by the formula [2]. wherein R1 represents a hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, fluoromethyl group, difluoromethyl group, trifluoromethyl group, or perfluoroethyl group, and wherein one of R2, R3 and R4 is a CF3C(CF3)(OH)CH2— group, and each of the other two of R2, R3 and R4 is a hydrogen.

Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.

Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.

Abstract: A fluorine-containing cyclic compound is represented by the formula 1: wherein each of R1, R2 and R3 independently represents a hydrogen, alkyl group, fluorine, fluoroalkyl group or hexafluorocarbinol group, wherein at least one of the hexafluorocarbinol groups may partly or totally be protected with a protecting group, and wherein the protecting group is (a) a straight-chain, branched or cyclic hydrocarbon group having a carbon atom number of 1-25 or (b) an aromatic hydrocarbon group and optionally contains a fluorine atom, oxygen atom, nitrogen atom or carbonyl bond.

Abstract: The present invention relates to a polymerizable monomer represented by the general formula (1), 1

Abstract: A fluorine-containing cyclic compound is represented by the formula 1: 1