Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

Abstract: The present invention relates to a polymerizable monomer represented by the general formula (1), wherein R1 is a hydrogen atom, a halogen atom, a hydrocarbon group or a fluorine-containing alkyl group; R2 is a straight-chain or branched alkyl group, a cyclic alkyl group, an aromatic group, or a substituent having at least two of these groups, the R2 being optionally partially fluorinated; R3 is a hydrogen atom, a hydrocarbon group that is optionally branched, a fluorine-containing alkyl group, or a cyclic group having an aromatic or alicyclic structure, the R3 optionally containing a bond of an oxygen atom or carbonyl group; and n is an integer of 1-2.

Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.

Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000-500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.

Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.

Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: Acrylic esters containing fluorine at &agr;-position and having a lactone ring introduced into the ester side chain thereof are novel. Polymers obtained from the acrylic esters have a high transparency to VUV and good adhesion to substrates and are used to formulate chemically amplified resist compositions for lithographic microfabrication.

Abstract: An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.

Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: The present invention relates to a polymerizable monomer represented by the general formula (1), 1

Abstract: A ternary copolymer comprising units of &agr;-trifluoro-methylacrylic carboxylate having acid labile groups substituted thereon, units of &agr;-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.

Abstract: Acrylic esters containing fluorine at &agr;-position and having a lactone ring introduced into the ester side chain thereof are novel. Polymers obtained from the acrylic esters have a high transparency to VUV and good adhesion to substrates and are used to formulate chemically amplified resist compositions for lithographic microfabrication.

Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: The invention relates to a novel octafluorotricyclodecane derivative represented by the general formula (1), where R1 is a hydrogen atom, a halogen atom, a hydrocarbon group or a halogenated hydrocarbon group, m is 0 or 1, and R2 is represented by the general formula (2), where R3 is a hydrogen atom or a hydrocarbon group optionally having a substituent. This octafluorotricyclodecane derivative may be useful as a monomer for producing various functional polymers or as a raw material of the same.

Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

Abstract: An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.

Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.