Abstract: To provide a glass substrate with protective glass which suppresses formation of microscopic scratches on the back surface of the glass substrate in the production process for a display device, and which prevents a strength decrease in the process or formation of etch pits after a chemical etching treatment; a process for producing a display device by using the glass substrate with protective glass; and a double-sided removable resin sheet for the glass substrate with protective glass. A glass substrate with protective glass, which comprises a glass substrate and a protective glass plate laminated on each other, and which is characterized in that the glass substrate and the protective glass plate are laminated by a double-sided removal resin sheet.

Abstract: A method for manufacturing a circuit pattern-provided substrate including forming a resist layer on a substrate, forming an opening corresponding to a circuit pattern and having an eaves cross-sectional shape in the resist layer, forming a thin film layer having a portion formed on the substrate in the opening and a portion formed on the resist layer, and removing the resist layer such that the resist layer and the portion of the thin film layer formed on the resist layer are removed from the substrate. The forming of the opening comprises exposing the resist layer with a mask device which changes an exposure amount of the resist layer such that the eaves cross-sectional shape has a space at a boundary between the resist layer and the substrate.

Abstract: The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Abstract: An object of the invention is to provide a method for manufacturing a transparent substrate provided with a tin oxide thin film which can be satisfactorily patterned even by irradiation with a laser light having low energy because an ablation phenomenon occurs therewith. The invention relates to a method for manufacturing a transparent substrate bearing a circuit pattern, which comprises irradiating a thin-film-attached transparent substrate comprising a transparent substrate having thereon a transparent conductive film having a carrier concentration of 5×1019/cm3 or higher, with a laser light having a wavelength of 1,064 nm to form a circuit pattern on the transparent substrate.

Abstract: The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Abstract: A process for producing a glass substrate having a circuit pattern is disclosed. The process includes forming a thin film layer on a glass substrate and then irradiating the thin film layer with laser light to form a circuit pattern on the glass substrate; depositing a low-melting point glass having a softening point of from 450 to 630° C. on the glass substrate having the circuit pattern formed thereon; and sintering the low-melting point glass to form a low-melting point glass layer which includes the low-melting point glass sintered on the glass substrate having the circuit pattern formed thereon and which forms a compatible layer between the glass substrate and the low-melting point glass layer.

Abstract: To provide a method for forming electrodes and/or black stripes for a plasma display substrate, wherein display electrodes, bus electrodes and optionally black stripes for a plasma display panel are formed of the same material by the same dry step, whereby a clear image having reflection prevented, can be displayed on a PDP display device with a low load on the environment, at low costs, with low resistance, without erosion by a dielectric. A method for forming electrodes and/or black stripes for a plasma display substrate, which comprises applying a laser beam to a mask layer formed on a transparent substrate to form openings at areas corresponding to the respective patterns of display electrodes, bus electrodes and optionally black stripes, then continuously forming an antireflection layer to provide an antireflection effect over the entire surface and an electrode layer, and applying again a laser beam to peel off the mask layer and at the same time to remove an unnecessary thin film layer.

Abstract: A conventional light diffusion plate provided in a direct type backlight unit to be employed for e.g. a liquid crystal display, has problems in that it does not have a sufficient diffusion performance, it is difficult to increase the size, and it is difficult to produce such a light diffusion plate at low cost. A light diffusion plate comprising a glass substrate and a light diffusion layer formed on the glass substrate, wherein the light diffusion layer comprises a matrix and a light diffusion agent, the absolute value ?n of the refractive index difference between the matrix and the light diffusion agent is 0.05 or more and less than 0.5, and the volume ratio of the light diffusion agent in the light diffusion layer is 30% or more.

Abstract: To provide a glass substrate with protective glass which suppresses formation of microscopic scratches on the back surface of the glass substrate in the production process for a display device, and which prevents a strength decrease in the process or formation of etch pits after a chemical etching treatment; a process for producing a display device by using the glass substrate with protective glass; and a double-sided removable resin sheet for the glass substrate with protective glass. A glass substrate with protective glass, which comprises a glass substrate and a protective glass plate laminated on each other, and which is characterized in that the glass substrate and the protective glass plate are laminated by a double-sided removal resin sheet.

Abstract: The present invention is to provide a method for manufacturing a circuit pattern-provided transparent substrate having a circuit pattern which is free from pattern peeling and remaining of resist and has good pattern precision and which does not cause disconnection when used as an electrode of an electron circuit or the like.

Abstract: The invention provides a process for producing a glass substrate (10) having a circuit pattern (26), which includes a circuit pattern formation step of forming a thin film layer (12) on a glass substrate and then irradiating the thin film layer with laser light (22) to form a circuit pattern on the glass substrate; a low-melting point glass deposition step of depositing a low-melting point glass (28) having a softening point of from 450 to 630° C. on the glass substrate having the circuit pattern formed thereon; and a sintering step of sintering the low-melting point glass to form a low-melting point glass layer (32) comprising the low-melting point glass sintered on the glass substrate having the circuit pattern formed thereon and to form a compatible layer (34) between the glass substrate and the low-melting point glass layer.

Abstract: An object of the invention is to provide a method for manufacturing a transparent substrate provided with a tin oxide thin film which can be satisfactorily patterned even by irradiation with a laser light having low energy because an ablation phenomenon occurs therewith. The invention relates to a method for manufacturing a transparent substrate bearing a circuit pattern, which comprises irradiating a thin-film-attached transparent substrate comprising a transparent substrate having thereon a transparent conductive film having a carrier concentration of 5×1019/cm3 or higher, with a laser light having a wavelength of 1,064 nm to form a circuit pattern on the transparent substrate.

Abstract: The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Abstract: To provide a method for forming electrodes and/or black stripes for a plasma display substrate, wherein display electrodes, bus electrodes and optionally black stripes for a plasma display panel are formed of the same material by the same dry step, whereby a clear image having reflection prevented, can be displayed on a PDP display device with a low load on the environment, at low costs, with low resistance, without erosion by a dielectric. A method for forming electrodes and/or black stripes for a plasma display substrate, which comprises applying a laser beam to a mask layer formed on a transparent substrate to form openings at areas corresponding to the respective patterns of display electrodes, bus electrodes and optionally black stripes, then continuously forming an antireflection layer to provide an antireflection effect over the entire surface and an electrode layer, and applying again a laser beam to peel off the mask layer and at the same time to remove an unnecessary thin film layer.

Abstract: A film deposition method for a multilayer for a EUV mask blank by which a defect caused by the mixing of a particle in the layer during film formation can be prevented and an ion beam sputtering apparatus suitable for the method are presented. A film deposition method for forming a multilayer for a reflective-type mask blank for EUV lithography on a film deposition substrate by using an ion beam sputtering method, the film deposition method being characterized in that a sputtering target and a film deposition substrate are disposed at opposed positions with a predetermined space, and ion beams are injected to the sputtering target from an ion source which is disposed at a position out of the region where particles move linearly from the film deposition substrate toward the sputtering target.

Abstract: A reflective-type mask blank for EUV lithography for reducing the EUV ray reflectance at the absorbing layer and a method for producing the mask blank are presented. A reflective-type mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light, which are formed on the substrate in this order, the reflective-type mask blank for EUV lithography being characterized in that the absorbing layer is a Cr layer of low EUV ray reflectance deposited by an ion beam sputtering method.

Abstract: An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate.

Abstract: An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate

Abstract: A method for forming an optical thin film having multiple optical layers on the surface of a substrate using a magnetron sputtering apparatus with a sputtering chamber having cathodes, the substrate, and at least two kinds of targets disposed therein. An inert gas and a reactive gas are introduced into the sputtering chamber to form at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of a discharge pressure being no greater than 1.3×10−1 Pa.

Abstract: An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate