Abstract: A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.

Abstract: An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate

Abstract: A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.

Abstract: A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Abstract: Object: To provide a method for preparing an optical thin film having multiple optical layers with little inclusion of impurities and having a high density.

Abstract: Transparent conductive films are provided which provide high sheet resistance, high transparency, high heat resistance and high moisture resistance, wherein the transparent conductive films contain either (a) an oxide film made of a mixed oxide of indium and tin and doped with at least 0.01 and less than 0.6 weight % of nitrogen and a geometrical thickness of from 5 to 25 nm or (b) an oxide film made of a mixed oxide of indium and tin, wherein the oxide film contains tin within a range of from 4.2 to 8.3 atomic % based on indium and a geometrical thickness of from 5 to 20 nm, and where in each case (a) and (b) the oxide film has a light transmittance of more than 90% at a wavelength of 550 nm, transparent conductive film-coated substrates prepared therefrom and touch panels prepared from the transparent conductive film-coated substrates.

Abstract: A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Abstract: A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.

Abstract: A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+l) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Abstract: A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

Abstract: A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.

Abstract: A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

Abstract: In a method of forming a transparent conductive film, an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 .times. 10.sup.-4 Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.