Abstract: A hollow columnar shock absorbing member (1) has an axis (O), a plurality of rectangular walls (1a, 1b, 1c, 1d) extending parallel to axis (O), and a polygonal cross-section perpendicular to axis (O), the shock absorbing member extending in the direction of axis (O) and absorbing externally-applied impact energy while buckling in the direction of axis (O). Shock absorbing member (1) is provided with at least two flanges (2a, 2b, 2c, 2d) protruding from at least two edges (1e, 1f, 1g, 1h) formed by at least two sets of neighboring walls among a plurality of walls, and the at least two flanges are arranged so that the directions of protrusion of the flanges from the edges are directed to the same direction with respect to a circumferential direction.

Abstract: A current-carrying device that carries AC power, including: an adjacent portion in which the AC power is input from or output to an external device; and a fuse portion that is adjacent to the adjacent portion, in which a cross-sectional area of the fuse portion is smaller than that of the adjacent portion, and in which a magnetic flux density generated in the fuse portion is smaller than a magnetic flux density generated in the adjacent portion when a structure of the fuse portion is made identical with that of the adjacent portion.

Abstract: A metallic hollow columnar member with a polygonal cross-section having at least five vertices and sides extending between the vertices, is disclosed. The polygonal cross-section is divided by two vertices (A, B) with small inside angles into two perimeter segments with a perimeter comprising one or more sides, and at least one of the two perimeter segments contains at least four sides. The respective inside angles of at least three vertices (V(i)) included in the perimeter segment which includes the at least four sides are equal to or less than 180°, the distance (SS(i)) between each of the at least three vertices (V(i)) and a straight line (L) connecting the two vertices (A, B) is shorter than ½ of the distance between the two vertices (A, B), and the inside angle of the vertex (C) with the smallest inside angle among the at least three vertices (V(i)) is larger than the inside angles of the two vertices (A, B).

Abstract: Disclosed is a device for driving an inverter having a semiconductor switching element. A gate voltage calculating unit (20) calculates a surge voltage from the temperature, current, and DC-side voltage of each of IGBTs of the inverter and compares the surge voltage with the breakdown voltage of the element. The gate voltage calculating unit (20) commands a gate voltage control unit (22) to set a gate voltage higher than the normal value (reference value) in the case of judging that the difference between the element breakdown voltage and the surge voltage exceeds a predetermined threshold voltage and that a margin exists in the surge voltage. The voltage control unit (22) performs switching control of gates of the IGBTs according to the gate voltage command higher than the reference voltage to thereby reduce stationary losses of the IGBTs.

Abstract: In a power conversion device of a vehicle, when a collision of a vehicle is detected, the voltage of a gate signal that drive a semiconductor switching element included in the power conversion device is decreased, and residual charge stored in a smoothing capacitor is discharged. Such a configuration increases switching loss when the semiconductor switching element is turned on or off during discharge of the residual charge in the power conversion device, so that discharge of the residual charge can be accomplished in a shorter time.

Abstract: A PCU drives a motor generator using electric power from a power storage device. The PCU includes a power conversion device, a capacitor and a control unit. When detecting a crash, the control unit drives the power conversion device and discharges charges remaining in the capacitor. Each of a plurality of reverse conducting-type semiconductor elements included in the power conversion device is integrally formed of a first semiconductor element operating as a switching element and a second semiconductor element operating as a free wheeling diode. In response to detection of the crash of a vehicle, the control unit changes a voltage applied to a gate terminal of the first semiconductor element and increases an electric power loss during a current-circulating operation by the second semiconductor element. As a result, the remaining charges stored in the capacitor in the drive apparatus is discharged as soon as possible.

Abstract: A high-strength steel sheet includes, by mass %, C: 0.03% to 0.30%, Si: 0.08% to 2.1%, Mn: 0.5% to 4.0%, P: 0.05% or less, S: 0.0001% to 0.1%, N: 0.01% or less, acid-soluble Al: more than 0.004% and less than or equal to 2.0%, acid-soluble Ti: 0.0001% to 0.20%, at least one selected from Ce and La: 0.001% to 0.04% in total, and a balance of iron and inevitable impurities, in which [Ce], [La], [acid-soluble Al], and [S] satisfy 0.02?([Ce]+[La])/[acid-soluble Al]<0.25, and 0.4?([Ce]+[La])/[S]?50 in a case in which the mass percentages of Ce, La, acid-soluble Al, and S are defined to be [Ce], [La], [acid-soluble Al], and [S], respectively, and a microstructure includes 1% to 50% of martensite in terms of an area ratio.

Abstract: An ECU executes a program including: detecting a catalyst temperature T upon start of an engine; outputting an instruction signal to drive a power module, which is disposed in contact with an outer surface of a catalyst and is high in heat resistance, with a low efficiency upon determination that the catalyst temperature need be increased; and outputting a valve opening instruction signal to a switch valve in a cooling system in such a manner as not to allow a coolant to flow in a coolant pipeline interposed between the power module and an electric part low in heat resistance.

Abstract: An inverter for driving a motor includes a plurality of power semiconductor devices. The plurality of power semiconductor devices include a resistance electrically connected between a collector and an emitter of an IGBT element. Each of the power semiconductor devices forms any one of a U-phase arm, a V-phase arm and a W-phase arm of the inverter. As a result, a discharge resistance is built in the inverter, and therefore, it is not required to prepare the discharge resistance separately. Thus, the number of components required for a motor drive apparatus can be decreased and the number of operation steps can be reduced.

Abstract: A performance evaluation method of a vehicle member includes a calculation process for performing an analysis using a partial structure CAE model modeling a module where a member of a vehicle to be evaluated and a collision test device for conducting a collision test on the member are combined, and obtaining a value of a collision performance evaluation parameter in the partial structure CAE model; a calculation process for determining a boundary condition of the partial structure CAE model; a calculation process for determining a test condition of a member collision test device based on the boundary condition of the partial structure CAE model; and a test process for conducting a collision test using a physical member collision test device and a physical member, based on the set condition of the member collision test device.

Abstract: In a power conversion device of a vehicle, when a collision of a vehicle is detected, the voltage of a gate signal that drive a semiconductor switching element included in the power conversion device is decreased, and residual charge stored in a smoothing capacitor is discharged. Such a configuration increases switching loss when the semiconductor switching element is turned on or off during discharge of the residual charge in the power conversion device, so that discharge of the residual charge can be accomplished in a shorter time.

Abstract: A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.

Abstract: Disclosed is a device for driving an inverter having a semiconductor switching element. A gate voltage calculating unit (20) calculates a surge voltage from the temperature, current, and DC-side voltage of each of IGBTs of the inverter and compares the surge voltage with the breakdown voltage of the element. The gate voltage calculating unit (20) commands a gate voltage control unit (22) to set a gate voltage higher than the normal value (reference value) in the case of judging that the difference between the element breakdown voltage and the surge voltage exceeds a predetermined threshold voltage and that a margin exists in the surge voltage. The voltage control unit (22) performs switching control of gates of the IGBTs according to the gate voltage command higher than the reference voltage to thereby reduce stationary losses of the IGBTs.

Abstract: Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.

Abstract: An inverter for driving a motor includes a plurality of power semiconductor devices. The plurality of power semiconductor devices include a resistance electrically connected between a collector and an emitter of an IGBT element. Each of the power semiconductor devices forms any one of a U-phase arm, a V-phase arm and a W-phase arm of the inverter. As a result, a discharge resistance is built in the inverter, and therefore, it is not required to prepare the discharge resistance separately. Thus, the number of components required for a motor drive apparatus can be decreased and the number of operation steps can be reduced.

Abstract: An ECU executes a program including: detecting a catalyst temperature T upon start of an engine; outputting an instruction signal to drive a power module, which is disposed in contact with an outer surface of a catalyst and is high in heat resistance, with a low efficiency upon determination that the catalyst temperature need be increased; and outputting a valve opening instruction signal to a switch valve in a cooling system in such a manner as not to allow a coolant to flow in a coolant pipeline interposed between the power module and an electric part low in heat resistance.

Abstract: Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.

Abstract: A surge voltage target setting unit (103) obtains a main circuit power supply voltage (VH) of a semiconductor power conversion device based on an inter-terminal voltage (Vce) of a semiconductor switching element (100) detected by a voltage detection unit (102), and sets a control target (Vm) of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit (71), when the semiconductor switching element (100) is turned off, sets a quantity of voltage modification (V1) so as to modify a gate voltage (Vg) in a direction raising the gate voltage (Vg), that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage (Vce), when the inter-terminal voltage (Vce) exceeds the control target (Vm).

Abstract: A drum-type laundry machine of the present invention ensures that a lid (outer lid) thereof can advantageously be opened and closed.

Abstract: In a multi-module system, information required for linked operation of a plurality of modules is stored in a communication manager as profiles written in a specific format. The modules operate by referring to these profiles, and update the profiles as appropriate. The modules thereafter operate based on the updated profiles, and appropriately updates the profiles. The communication manager thus enables the linked operation among the modules based on continuously updated profiles.