Abstract: An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.

Abstract: An electro-optical device includes a substrate, a pixel electrode disposed at the substrate, and a pixel circuit portion disposed between the substrate and the pixel electrode. The pixel circuit portion includes a scanning line disposed along a first direction, a data line disposed along a second direction intersecting the first direction, a first constant potential line disposed along the scanning line, a second constant potential line disposed along the data line, and a transistor disposed corresponding to an intersection position of the scanning line and the data line and including a gate electrode electrically coupled to the scanning line, a source region electrically coupled to the data line, and a drain region electrically coupled to the pixel electrode. The pixel circuit portion also includes a coupling portion disposed corresponding to the intersection position and configured to electrically couple the first constant potential line and the second constant potential line.

Abstract: An optical transmission system transmits a Radio Frequency (RF) signal by a frequency division multiplexing method. The optical transmission system includes a Transmitter Optical SubAssembly (TOSA), an optical fiber, and a Receiver Optical SubAssembly (ROSA). The TOSA includes a surface emitting laser diode configured to be capable of emitting light at output of 0.8 mW or more. In the optical transmission system including the surface emitting laser diode, a noise index obtained by a measurement method including a predetermined step is 10.0 dB?V or less.

Abstract: An optical system includes, in order from an object side to an image side, a first unit, a second unit, and a third unit. The first unit includes a first substrate, and a first lens having a negative refractive power and disposed on the image side of the first substrate. The second unit includes a second substrate, and a second lens having a positive refractive power and disposed on the object side of the second substrate. The third unit includes a third substrate, and a third lens having a positive refractive power and disposed on the object side of the third substrate.

Abstract: An element substrate serving as a substrate for an electro-optical device includes a base material, a TFT disposed on the base material, the TFT including a semiconductor layer, and a first insulating film including a silicon oxide film disposed between the base material and the semiconductor layer, wherein a content of hydrogen in the silicon oxide film is 1.0×1019 atoms/cm3 or more but less than 1.0×1020 atoms/cm3.

Abstract: A wash water processing apparatus of reusing wash water includes: a washing processing part washing a subject to be washed; a wash water accommodation part into which processed water used in a washing process in the washing processing part is once accommodated; a sterilization and purification unit causing, while acting with an ozone supply function, ozone water to be contained in the processed water flowing through the wash water accommodation part in a circular manner; and a filtration mechanism part configured to include a filter and an ion-exchange resin and sequentially filtrating the processed water to be reused as wash water in the washing processing part, as the ozone water is supplied as the processed water is mixed to dilute an ozone concentration in the wash water accommodation part. In a state where the ozone concentration is adjusted, the processed water is passed through the filter and the ion-exchange resin.

Abstract: Included are: a semiconductor layer including a drain region, a channel region, and a second LDD region between the drain region and the channel region; a gate electrode disposed overlapping the channel region; a gate wiring line electrically coupled to the gate electrode; and a second light shielding portion disposed between the second LDD region and the gate wiring line and overlapping the second LDD region and the gate wiring line in plan view.

Abstract: A voltage conversion device includes input-side switching elements provided on an input side of a smoothing inductance and configured to perform switching, first and second power supply lines provided on an output side of the smoothing inductance and configured to respectively supply power to a first load and a second load, output-side switching elements respectively provided on the first and second power supply lines, and a control unit configured to perform on/off control on the input-side switching elements and the output-side switching elements. The control unit performs the on/off control by setting switching frequencies of the output-side switching elements to be lower than switching frequencies of the input-side switching elements.

Abstract: A connector includes an optical fiber and a case, and converts an optical signal input from the optical fiber into an electrical signal and outputs the electrical signal, or converts an input electrical signal into an optical signal and outputs the optical signal to the optical fiber. The case has a wall into which the optical fiber is inserted. The rear wall has an upper end and a lower end facing each other with a space therebetween so that the optical fiber intervenes in the space. The case includes an upper protruding wall protruding in the front-rear direction and a lower protruding wall protruding in the front-rear direction. Between the upper free end of the upper protruding wall and the lower free end of the lower protruding wall, a first space is defined so the optical fiber can freely move in the width direction.

Abstract: A voltage conversion device includes first to fourth input-side switching elements provided on an input side of a smoothing inductance, first and second power supply lines provided on an output side of the smoothing inductance and configured to respectively supply power to a first load and a second load operating at an operating voltage lower than that of the first load; first and second output-side switching elements respectively provided on the first and second power supply lines, and a control unit configured to perform on/off control on the first and second output-side switching elements. The control unit turns on the first output-side switching element to supply power to the first load, without supplying power to the second load by turning off the second output-side switching element, during a period in which the current is supplied to the smoothing inductance by switching of the input-side switching elements.

Abstract: An electro-optical device includes a substrate, a pixel electrode disposed at the substrate, and a pixel circuit portion disposed between the substrate and the pixel electrode. The pixel circuit portion includes a scanning line disposed along a first direction, a data line disposed along a second direction intersecting the first direction, a first constant potential line disposed along the scanning line, a second constant potential line disposed along the data line, and a transistor disposed corresponding to an intersection position of the scanning line and the data line and including a gate electrode electrically coupled to the scanning line, a source region electrically coupled to the data line, and a drain region electrically coupled to the pixel electrode. The pixel circuit portion also includes a coupling portion disposed corresponding to the intersection position and configured to electrically couple the first constant potential line and the second constant potential line.

Abstract: An electro-optical device includes a first substrate including a layered body including a plurality of insulating layers, and a pixel electrode disposed at the layered body, a second substrate including a common electrode, an electro-optical layer disposed between the pixel electrode and the common electrode, the electro-optical layer having optical characteristics varying according to an electric field, a spacer coupled to the first substrate, the spacer defining a distance between the pixel electrode and the common electrode, in which the spacer has a first portion overlapping with the pixel electrode when viewed in a thickness direction of the first substrate, and a second portion not overlapping with the pixel electrode when viewed in the thickness direction.

Abstract: An electro-optical device includes a wiring substrate including a wiring line, a common electrode, a conduction member that is electrically conductive, the conduction member being configured to electrically couple the wiring line and the common electrode, a pixel electrode disposed between the wiring substrate and the common electrode, and an electro-optical layer disposed between the pixel electrode and the common electrode. The wiring substrate includes: an insulating layer disposed between the wiring line and the common electrode, a conduction electrode between the insulating layer and the common electrode and in contact with the insulating layer, the conduction member being disposed at the conduction electrode, and a contact portion composed of a material different from the conduction electrode and penetrating the insulating layer, the contact portion being configured to electrically couple the conduction electrode and the wiring line.

Abstract: A light shielding area including a first conductive layer, a second conductive layer, a first conductor part disposed between the first conductive layer and the second conductive layer, and a transistor surrounded by the first conductive layer, the second conductive layer, and the first conductor part, and a light transmission area surrounded by the light shielding area are provided, wherein an edge of the first conductor part forms a part of a boundary between the light shielding area and the light transmission area.

Abstract: A power-supply control device capable of reducing a size of a power-supply device including a main power-supply and a plurality of auxiliary power-supply systems and stably supplying electric power to the plurality of auxiliary power-supply systems is provided. The power-supply control device includes a DC/DC converter that steps down a power-supply voltage from a main battery and outputs the stepped-down power-supply voltage to a first auxiliary power-supply system and a second auxiliary power-supply system; and a controller that stops supply of electric power from the DC/DC converter to the second auxiliary power-supply system when a load of a heater is in a predetermined high-load state, and supplies electric power from the DC/DC converter to the second auxiliary power-supply system when the load of the heater changes from the predetermined high-load state to a predetermined low-load state.

Abstract: A wash water processing method and a wash water processing apparatus in a simple structure capable of effectively decomposing organic matters and killing bacteria contained in wash water, extending the life of a filter of a filtration apparatus and an ion-exchange resin and, furthermore, extending a bacteria-killing/washing interval of a washing processing part. In the wash water processing apparatus (11) and the washing method, a wash water accommodation part (12) into which processed water processed in a washing processing part (10) flows and a filtration mechanism part (14) are connected and the wash water accommodation part has connected in a circulatable manner thereto an inflow flow path and an outflow flow path of a sterilization and purification unit which organically couples respective functions of an ozone supply part which supplies ozone, an ultraviolet irradiation part which irradiates with ultraviolet rays, and a photocatalysis part which causes a photocatalyst to act.

Abstract: An element substrate of an electro-optical device (substrate for an electro-optical device) includes a first lens and a second lens. The first lens is formed between a first substrate and a switching element, and the second lens is formed between the switching element and a pixel electrode. The second lens includes a second lens concave surface and a second lens-forming lens layer. The second lens concave surface is recessed in a surface of an interlayer insulating film. The second lens-forming lens layer is filled in the inside of the second lens concave surface. The interlayer insulating film includes a contact hole in a location not overlapping, in a plan view, with the second lens concave surface. The contact hole electrically couples the pixel electrode to the switching element.

Abstract: In a liquid crystal device, an intermediate refractive index film including a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film is provided between an oriented film formed of a diagonally vapor-deposited film of silicon oxide and an electrode containing ITO. Thus, because there are no interfaces having a large refractive index difference between the oriented film and the electrode, reflection between the oriented film and the electrode can be suppressed. A high density silicon oxide film is formed between the intermediate refractive index film and the oriented film. The high density silicon oxide film is formed by an atomic deposition method, thus is appropriately formed inside a contact hole.

Abstract: In an electro-optical device, inside an insulating layer, a cavity is provided which extend in a thickness direction at both sides in a width direction of a semiconductor layer and at both sides in a length direction of the semiconductor layer and surround the semiconductor layer in a plan view. The cavity is provided, in the thickness direction, from a position on the first substrate side relative to the semiconductor layer to a position on a pixel electrodes side relative to the semiconductor layer. The semiconductor layer is positioned behind at least one of a second light-shielding layer and the cavity when viewed from any direction on the first substrate side. The cavity is provided up to a position on the pixel electrode side relative to a gate electrode provided at the pixel electrode side relative to the semiconductor layer of a transistor, toward the pixel electrodes.