Abstract: An object of the present invention is to reduce the difference between the torque generated by an internal combustion engine and a required torque in a control system for a multifuel internal combustion engine that can use CNG and liquid fuel. To achieve the object, the control system for an internal combustion engine according to the present invention causes the internal combustion engine to operate in a first operation mode in which only CNG is used, when the required torque of the internal combustion engine is equal to or lower than a threshold and to operate in a second operation mode in which at least liquid fuel among CNG and liquid fuel is used, when the required torque of the internal combustion engine is higher than the threshold and changes the magnitude of the threshold in conjunction with the concentration of inert gases contained in CNG.

Abstract: Provided is a semiconductor apparatus including a channel layer, an upper barrier layer that is provided on the channel layer, a first barrier layer that constitutes a boundary layer on a side of the channel layer in the upper barrier layer, a second barrier layer that is provided in a surface layer of the upper barrier layer, a low-resistance region that is provided in at least a surface layer in the second barrier layer, a source electrode and a drain electrode that are connected to the second barrier layer, at positions across the low-resistance region, a gate insulating film that is provided on the low-resistance region, and a gate electrode that is provided above the low-resistance region via the gate insulating film.

Abstract: In a control system that includes a pressure accumulating portion that supplies CNG to a fuel injection valve and a regulator that adjusts a pressure in the pressure accumulating portion to a set pressure and of which a valve element opens when CNG is supplied to the pressure accumulating portion and closes when supply of CNG to the pressure accumulating portion is shut off, a control parameter relating to a combustion state in an internal combustion engine is controlled on the basis of a length of a period during which an opening degree of the valve element reduces from a first predetermined opening degree to a second predetermined opening degree when the pressure in the pressure accumulating portion is adjusted to the set pressure by the regulator.

Abstract: A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.

Abstract: An object of the present invention is to provide a technology with which when a gaseous fuel is supplied into a fuel tank of a vehicle with an internal combustion engine that uses gaseous fuel, properties of the supplied gaseous fuel can be determined promptly. To achieve the object, the fuel property determination system for a vehicle equipped with an internal combustion engine using gaseous fuel according to the present invention is adapted to calculate, when gaseous fuel is supplied to the fuel tank, the gas constant of the supplied gaseous fuel using a cross sectional area of a passage for delivering gaseous fuel to the fuel tank from a filler port and a change in the pressure in the fuel tank as parameters and to calculate the concentration of inert gases contained in the gaseous fuel using the gas constant as a parameter.

Abstract: An object of the invention is to provide a technology pertaining to a control system for an internal combustion engine using CNG to allow an internal combustion engine to operate appropriately even when properties of CNG change. To achieve the object, in the control system for an internal combustion engine using compressed natural gas according to the invention, when air-fuel ratio feedback control that corrects the fuel injection quantity in such a way as to make the air-fuel ratio of the air-fuel mixture burned in the internal combustion engine substantially equal to a target air-fuel ratio, a control parameter relating to a condition of combustion of the air-fuel mixture is corrected based on the magnitude of the correction value in the air-fuel ratio feedback control.

Abstract: A semiconductor device includes a channel layer; and a high resistance layer that is provided on the channel layer, and is made of a semiconductor with high resistance which has a conduction band position higher than that of the semiconductor which forms the channel layer. The semiconductor device includes a first conduction-type low resistance region provided on a surface layer of the high resistance layer, and is made of a semiconductor including first conduction type impurities. The semiconductor device includes: a source electrode and a drain electrode that are connected to the high resistance layer, in a position crossing the low resistance region; a gate insulating film provided on the low resistance region; and a gate electrode provided on the low resistance region via the gate insulating film. The semiconductor device includes current block regions between the low resistance region, and between the source electrode and the drain electrode respectively.

Abstract: The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.

Abstract: The present invention has been made in view of the above-mentioned problems, and is intended to carry out ignition to a mixture in a more stable manner in a multi-fuel internal combustion engine. In the control apparatus for a multi-fuel internal combustion engine which is able to be operated by mixed combustion of a plurality of kinds of fuels, a mixing ratio of the plurality of kinds of fuels is controlled by a mixing ratio control unit, and ignition timing of a spark plug is controlled by an ignition timing control unit, in such manner that a required discharge voltage is made equal to or less than a voltage which is lower by a fixed value than a voltage to be applied to said spark plug (S104, S108).

Abstract: There is provided a thin film transistor including: a gate electrode; a pair of source/drain electrodes; a first oxide semiconductor layer provided between the gate electrode, and the pair of source/drain electrodes, and forming a channel; and a second oxide semiconductor layer provided on the pair of source/drain electrodes side of the first oxide semiconductor layer, and having a polarity different from that of the first oxide semiconductor layer.

Abstract: When biomass fuel reacts with oxygen for a long period of time, an amount of acid ions in a tank is increased with time. However, when metallic ions are generated for some reason and the reaction proceeds to change the acid ions into metallic salts, the increase rate of the amount of the acid ions in the fuel tank becomes slow. When the metallic salt forming reaction proceeds rapidly, the amount of the acid ions may even be reduced. Therefore, in the embodiment, the change of the acid ions into the metallic salts in a fuel is detected. Unless the fuel is newly supplied by refueling, the decrease of the amount of acid ions in the fuel can be considered as a change into metallic salts. Accordingly, the generation of metallic salts can be detected by monitoring the decrease of the amount of acid ions in the fuel. Thus, clogging of a fuel supply system or the like caused by the metallic salt forming reaction can be prevented.

Abstract: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; a gate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.

Abstract: A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.

Abstract: A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

Abstract: A transmittance sensor that detects the optical transmittance of biofuel is provided on a fuel tank that stores biofuel to be supplied to an internal combustion engine. An ECU periodically acquires the optical transmittance detected by the transmittance sensor, and calculates the amount of change from the previous value. In addition, the ECU calculates a degradation index value indicating the degree of degradation of the biofuel by accumulating the amount of change.

Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

Abstract: When biomass fuel reacts with oxygen for a long period of time, an amount of acid ions in a fuel tank is increased with time. However, when metallic ions are generated for some reason and the reaction proceeds to change the acid ions into metallic salts, the increase rate of the amount of the acid ions in the fuel tank becomes slow. When the metallic salt forming reaction proceeds rapidly, the amount of the acid ions may even be reduced. Therefore, in the embodiment, the change of the acid ions into the metallic salts in a fuel is detected. Unless the fuel is newly supplied by refueling, the decrease of the amount of acid ions in the fuel can be considered as a change into metallic salts. Accordingly, the generation of metallic salts can be detected by monitoring the decrease of the amount of acid ions in the fuel. Thus, clogging of a fuel supply system or the like caused by the metallic salt forming reaction can be prevented.

Abstract: There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

Abstract: A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.

Abstract: A diesel engine is provided with an exhaust fuel addition valve capable of adding fuel from an exhaust passage on an upstream side of an exhaust post-treatment device. An ECU, which is a control unit of the diesel engine, has a function to estimate biofuel concentration in the fuel and a function to obtain an exhaust temperature in the exhaust passage. The ECU sets a minimum operating exhaust temperature, which is a lower limit value of the exhaust temperature to permit operation of the exhaust fuel addition valve, according to the estimated biofuel concentration. The fuel added from the exhaust fuel addition valve is sufficiently vaporized in exhaust gas having temperature not lower than a minimum operation permission exhaust temperature set according to the biofuel concentration and is allowed to flow to the exhaust post-treatment device.