Abstract: For providing a stamper for forming a planar micro-lens array, a stamper is prepared by forming plural concave portions 2 for forming lens portion upon a stamping surface thereof, and a trap portion 3 is provided surrounding said plural concave portions and continuing until an outer edge thereof. Then, onto the stamping surface, on which a release agent 4 is applied, there is applied a high refractive index resin 5, and a glass substrate 6 is pressed onto the high refractive index resin 5 to exude it. With this operation, the high refractive index resin 5 is filled into each of the plural concave portions 2, and any excess is received or accommodated in the trap portion 3, thereby preventing excess resin from being forced outside.

Abstract: The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.

Abstract: A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; whereinbefore depositing the Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the Group III-V compound semiconductor layer in a dose of 8.times.10.sup.-4 Torr.multidot.sec or more.

Abstract: A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.

Abstract: A microlens array of high converging efficiency is provided, independently of the array and lens filling rate of microlens arrays, with a method of manufacturing microlens arrays using the diffusion process. A multitude of refractive-index distribution type microlenses formed by diffusing in a planar transparent substrate a substance contributing to increasing the refractive index of the substrate are two-dimensionally and regularly arranged on the surface of the substrate. The microlenses are densely arranged on the surface of the substrate, and diffusion fronts of the microlenses form regions where the diffusion fronts are fused with those of the adjoining microlenses. The length of a region where certain two adjoining microlenses are fused together, in the direction of a straight line connecting the centers of the two microlenses is less than 20% of the array pitch of the microlenses in the above-mentioned direction.

Abstract: A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat.

Abstract: A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

Abstract: A microlens array of high converging efficiency is provided, independently of the array and lens filling rate of microlens arrays, with a method of manufacturing microlens arrays using the diffusion process. A multitude of refractive-index distribution type microlenses formed by diffusing in a planar transparent substrate a substance contributing to increasing the refractive index of the substrate are two-dimensionally and regularly arranged on the surface of the substrate. The microlenses are densely arranged on the surface of the substrate, and diffusion fronts of the microlenses form regions where the diffusion fronts are fused with those of the adjoining microlenses. The length of a region where certain two adjoining microlenses are fused together, in the direction of a straight line connecting the centers of the two microlenses is less than 20% of the array pitch of the microlenses in the above-mentioned direction.

Abstract: A method for treating the surface of the inner wall of a furnace, said inner wall being lined with ceramic fibers, involves placing a source generating an alkali component in a furnace for firing a material into a product, in which at least the inner wall is lined with a ceramic fiber body, and heating the interior of the furnace to vaporize the alkali component, thereby impregnating the surface layer portion of the ceramic fiber body with the thus vaporized alkali component.

Abstract: When an input reproduction scale m is equal to a value mla which lies in a reproduction scale section ml, rated moving speeds Ula and U2a corresponding to the reproduction scale m and a resonance point avoidance coefficient kl (=1) are read in, and practical moving speeds Vla (=kl.times.Ula=Ula) and V2a (=k1.times.U2a=U2a) of a holder 2 and a cylindrical drum 10 are determined with the above data. On the other hand, when the input reproduction scale m is equal to a value m2b which lies in another reproduction scale section m2, rated moving speeds Ulb and U2b corresponding to the reproduction scale m and a resonance point avoidance coefficient k2 (.noteq.1) are read in, and practical moving speeds Vlb (=k2.times.Ulb.noteq.U1b) and V2b (=k2.times.U2b.noteq.U2b) are determined with the above data.

Abstract: A variable inductor wherein two closed magnetic circuits each having a predetermined gap in one place are constructed of a movable magnetic core and a fixed magnetic core. When the movable magnetic core is moved, the opposite area between both the magnetic cores in one of the closed magnetic circuits increases, while the opposite area between both the magnetic cores in the other closed magnetic circuit decreases. Thus, the inductances of coils wound around parts of the respective closed magnetic circuits vary complementarily.

Abstract: In synthesizing cubic boron nitride from hexagonal boron nitride under high temperature and high pressure conditions, if water is incorporated into the raw material in an amount of at least 3% by weight, cubic boron nitride of a higher purity in the form of smaller crystallites than in conventional products can be obtained under lower temperature and lower pressure conditions than in conventional methods. When graphitic hexagonal boron nitride is used as the raw material, the temperature and pressure necessary for synthesis can be reduced to about 600.degree. C. and 50 Kbar, respectively.

Abstract: A gas sensor comprising as a gas sensible material a spinel-type ferrite represented by the general formula AFe.sub.2 O.sub.4 in which A stands for at least one member selected from the group consisting of Li, Mg, Mn, Fe, Co, Ni, Cu, Zn and Pb is provided. In many cases, a catalyzer or a recovering agent need not be incorporated in this gas sensor, and it is characterized in that it is hardly influenced by moisture in the atmosphere.

Abstract: The temperature for preparation of garnet phase of the conventional yttrium or rare-earth iron garnet can be lowered by about several hundreds centigrade by substituting 24C site of the garnet by lead. Thus obtained lead-substituted yttrium or rare-earth iron garnet has greater specific Faraday rotation than lead-nonsubstituted yttrium or rare-earth iron garnet.