Abstract: In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

Abstract: Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.

Abstract: A measurement system has a modulated laser source that illuminates a target within the measurement system. The modulated laser source has a first coherence length in an unmodulated state, and a second coherence length in a modulated state that is shorter than the first coherence length. The measurement system includes a detector that receives a deflected signal from the target and provides a detected signal having a signal component and a drift component, wherein the drift component is lower in the modulated state than in the unmodulated state of the modulated laser source.

Abstract: The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p-type AlInAs or InGaAsP overgrowth layers, for example.

Abstract: A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

Abstract: The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.

Abstract: The invention relates to optical communication devices, light emission devices and optical communication methods. Aspects of the present invention provide methods and devices enable provision of modulated output optical signals without providing modulation of total photon populations of cavities of associated lasers. Such avoids or minimizes bandwidth restrictions associated with conventional methods or devices which modulate total photon populations within cavities of lasers. One aspect of the invention includes an optical communication method including providing a data signal comprising data to be communicated and emitting light using a laser. The method further includes modulating the laser across a lasing mode transition responsive to the data signal. The emitting further includes emitting the light during a plurality of lasing modes of the laser to communicate the data responsive to the modulating.

Abstract: A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally growing edges and forming the transverse junction in a single ELOG-MOCVD (metal organic chemical vapor deposition) growth step. Vertical quantum wells may be used for both GaN vertical cavity surface emitting lasers (VCSELs) and GaN edge emitting lasers.

Abstract: A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

Abstract: A display system in accordance with the present invention includes a display screen having a phosphor that emits light in a wavelength range from about 450 nm to about 650 nm when excited by a laser beam. The laser beam is generated by a solid-state laser having an operating wavelength range from about 330 nm to about 440 nm.

Abstract: Doped diffraction gratings for use in quantum cascade lasers and mid-infrared wavelength vertical cavity surface emitting lasers can be made by introducing periodic variations in the doping levels that result in periodic refractive index variations. Doping is typically accomplished by use of an n type dopant.

Abstract: A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.

Abstract: A light modulator having a waveguide and a resonator is disclosed. The waveguide routes light of wavelength ? past the resonator. The resonator is coupled to the waveguide such that a portion of the light is input to the resonator, the resonator having a resonance at ?. The resonator includes a gain region in which light of wavelength ? is amplified and an absorption region in which light of wavelength ? is absorbed, the absorption region having first and second states, the first state absorbing less light of wavelength ? than the second state, the state of the absorption region is determined by an electrical signal coupled to the absorption region. The gain region provides a gain that compensates for the light absorption in the first state. In one embodiment, the waveguide and resonator are critically coupled when the absorption region is in the second state.

Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

Abstract: An object to be imaged or detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is detected by a detector, which includes a light-detecting sensor covered by a hybrid filter.

Abstract: An object to be detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is captured by an imager, which includes a light-detecting sensor covered by a hybrid filter.

Abstract: A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

Abstract: In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.

Abstract: A modulator having a waveguide and a microdisk resonator is disclosed. The waveguide has an input port for receiving a light signal of wavelength ? and an output port for transmitting modulated light. The microdisk resonator has a resonance at ? and is coupled to the waveguide between the input and output ports such that at least 10 percent of the light traveling in the waveguide is coupled to the microdisk resonator. The microdisk resonator further includes a material having a first state and a second state, the material absorbing more of the light in the first state than in the second state. The first and second states are selectable by a signal that is applied to the microdisk resonator. In one embodiment, the waveguide and the microdisk resonator occupy different portions of a sheet of material having the various layers used to construct the resonator.