Patents by Inventor Scott L. Light

Scott L. Light has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180337087
    Abstract: Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation.
    Type: Application
    Filed: May 18, 2017
    Publication date: November 22, 2018
    Inventors: Gurtej S. Sandhu, Scott L. Light, John A. Smythe, Sony Varghese
  • Patent number: 9583381
    Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: February 28, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
  • Patent number: 9465287
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: October 11, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
  • Patent number: 9330914
    Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: May 3, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Vishal Sipani, Michael D. Hyatt
  • Publication number: 20160048074
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Application
    Filed: October 30, 2015
    Publication date: February 18, 2016
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
  • Patent number: 9176385
    Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: November 3, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Jianming Zhou, Scott L. Light, David Kewley, Prasanna Srinivasan, Anton deVilliers
  • Patent number: 9153458
    Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: October 6, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Anton deVilliers
  • Patent number: 9140977
    Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.
    Type: Grant
    Filed: May 13, 2013
    Date of Patent: September 22, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
  • Publication number: 20150099362
    Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 9, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Scott L. Light, Vishal Sipani, Michael D. Hyatt
  • Patent number: 8969214
    Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: March 3, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
  • Publication number: 20150015860
    Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.
    Type: Application
    Filed: September 29, 2014
    Publication date: January 15, 2015
    Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael D. Hyatt, Jianming Zhou
  • Publication number: 20140370684
    Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.
    Type: Application
    Filed: June 14, 2013
    Publication date: December 18, 2014
    Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
  • Publication number: 20140342563
    Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.
    Type: Application
    Filed: May 14, 2013
    Publication date: November 20, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
  • Patent number: 8889558
    Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: November 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Ranjan Khurana, Anton J. deVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
  • Patent number: 8845908
    Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: September 30, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
  • Publication number: 20140247476
    Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
    Type: Application
    Filed: May 14, 2014
    Publication date: September 4, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
  • Patent number: 8815497
    Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: August 26, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVillers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
  • Publication number: 20140162458
    Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.
    Type: Application
    Filed: December 12, 2012
    Publication date: June 12, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Ranjan Khurana, Anton J. DeVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
  • Patent number: 8736814
    Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: May 27, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
  • Patent number: 8728721
    Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: May 20, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Kaveri Jain, Zishu Zhang, Anton J deVilliers, Dan Millward, Jianming Zhou, Michael D. Hyatt