Patents by Inventor Scott L. Light
Scott L. Light has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180337087Abstract: Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation.Type: ApplicationFiled: May 18, 2017Publication date: November 22, 2018Inventors: Gurtej S. Sandhu, Scott L. Light, John A. Smythe, Sony Varghese
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Patent number: 9583381Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: GrantFiled: June 14, 2013Date of Patent: February 28, 2017Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Patent number: 9465287Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: GrantFiled: October 30, 2015Date of Patent: October 11, 2016Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 9330914Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.Type: GrantFiled: October 8, 2013Date of Patent: May 3, 2016Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Vishal Sipani, Michael D. Hyatt
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Publication number: 20160048074Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: ApplicationFiled: October 30, 2015Publication date: February 18, 2016Applicant: MICRON TECHNOLOGY, INC.Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 9176385Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.Type: GrantFiled: December 16, 2013Date of Patent: November 3, 2015Assignee: Micron Technology, Inc.Inventors: Jianming Zhou, Scott L. Light, David Kewley, Prasanna Srinivasan, Anton deVilliers
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Patent number: 9153458Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.Type: GrantFiled: October 28, 2013Date of Patent: October 6, 2015Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Anton deVilliers
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Patent number: 9140977Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: May 13, 2013Date of Patent: September 22, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Publication number: 20150099362Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.Type: ApplicationFiled: October 8, 2013Publication date: April 9, 2015Applicant: Micron Technology, Inc.Inventors: Scott L. Light, Vishal Sipani, Michael D. Hyatt
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Patent number: 8969214Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.Type: GrantFiled: May 14, 2013Date of Patent: March 3, 2015Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
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Publication number: 20150015860Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: ApplicationFiled: September 29, 2014Publication date: January 15, 2015Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael D. Hyatt, Jianming Zhou
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Publication number: 20140370684Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: ApplicationFiled: June 14, 2013Publication date: December 18, 2014Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Publication number: 20140342563Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.Type: ApplicationFiled: May 14, 2013Publication date: November 20, 2014Applicant: Micron Technology, Inc.Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
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Patent number: 8889558Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.Type: GrantFiled: December 12, 2012Date of Patent: November 18, 2014Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Anton J. deVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
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Patent number: 8845908Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: GrantFiled: August 24, 2010Date of Patent: September 30, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
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Publication number: 20140247476Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.Type: ApplicationFiled: May 14, 2014Publication date: September 4, 2014Applicant: Micron Technology, Inc.Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
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Patent number: 8815497Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 15, 2013Date of Patent: August 26, 2014Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVillers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Publication number: 20140162458Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.Type: ApplicationFiled: December 12, 2012Publication date: June 12, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Ranjan Khurana, Anton J. DeVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
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Patent number: 8736814Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.Type: GrantFiled: June 13, 2011Date of Patent: May 27, 2014Assignee: Micron Technology, Inc.Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
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Patent number: 8728721Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.Type: GrantFiled: August 8, 2011Date of Patent: May 20, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Kaveri Jain, Zishu Zhang, Anton J deVilliers, Dan Millward, Jianming Zhou, Michael D. Hyatt