Patents by Inventor Scott L. Light
Scott L. Light has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140106280Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.Type: ApplicationFiled: December 16, 2013Publication date: April 17, 2014Applicant: Micron Technology, Inc.Inventors: Jianming Zhou, Scott L. Light, David Kewley, Prasanna Srinivasan, Anton deVilliers
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Patent number: 8658336Abstract: Some embodiments include methods for correcting for variation across substrates. A difference map is created to indicate differences between a desired pattern that is to be formed across the substrates utilizing photolithographic processing and a signature pattern representing the actual pattern formed with an initial setting of illumination optics. Modifications to the illumination optics are determined for improving problematic regions identified in the difference map, and the illumination optics are then modified. Substrates are photolithographically processed utilizing the modified illumination optics.Type: GrantFiled: April 30, 2012Date of Patent: February 25, 2014Assignee: Micron Technology, Inc.Inventors: Yuan He, Scott L. Light, Tim H. Bossart
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Publication number: 20140051251Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.Type: ApplicationFiled: October 28, 2013Publication date: February 20, 2014Applicant: Micron Technology, Inc.Inventors: Scott L. Light, Anton deVilliers
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Patent number: 8609302Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.Type: GrantFiled: August 22, 2011Date of Patent: December 17, 2013Assignee: Micron Technology, Inc.Inventors: Jianming Zhou, Scott L. Light, David Kewley, Prasanna Srinivasan, Anton deVilliers
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Publication number: 20130302981Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVilliers, Jianming Zhou, Yuan He, Michael D. Hyatt, Scott L. Light
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Patent number: 8575032Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.Type: GrantFiled: May 5, 2011Date of Patent: November 5, 2013Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Anton J. deVilliers
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Publication number: 20130288167Abstract: Some embodiments include methods for correcting for variation across substrates. A difference map is created to indicate differences between a desired pattern that is to be formed across the substrates utilizing photolithographic processing and a signature pattern representing the actual pattern formed with an initial setting of illumination optics. Modifications to the illumination optics are determined for improving problematic regions identified in the difference map, and the illumination optics are then modified. Substrates are photolithographically processed utilizing the modified illumination optics.Type: ApplicationFiled: April 30, 2012Publication date: October 31, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Scott L. Light, Tim H. Bossart
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Publication number: 20130252142Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: May 13, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Patent number: 8486611Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 14, 2010Date of Patent: July 16, 2013Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton de Villiers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Publication number: 20130052566Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.Type: ApplicationFiled: August 22, 2011Publication date: February 28, 2013Applicant: Micron Technology, Inc.Inventors: Jianming Zhou, Scott L. Light, David Kewley, Prasanna Srinivasan, Anton deVilliers
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Publication number: 20130040245Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.Type: ApplicationFiled: August 8, 2011Publication date: February 14, 2013Inventors: Scott L. Light, Kaveri Jain, Zishu Zhang, Anton J. de Villiers, Dan Millward, Jianming Zhou, Michael D. Hyatt
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Publication number: 20120314196Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.Type: ApplicationFiled: June 13, 2011Publication date: December 13, 2012Applicant: MICRON TECHNOLOGY, INCInventors: Yuan He, Jianming Zhou, Scott L. Light, Anton de Villiers, Kaveri Jain, Zishu Zhang, Dan Millward
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Publication number: 20120282778Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.Type: ApplicationFiled: May 5, 2011Publication date: November 8, 2012Inventors: Scott L. Light, Anton J. deVilliers
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Publication number: 20120052416Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: ApplicationFiled: August 24, 2010Publication date: March 1, 2012Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton de Viiliers, Michael Hyatt, Jianming Zhou
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Publication number: 20120015486Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: ApplicationFiled: July 14, 2010Publication date: January 19, 2012Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton de Villiers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Patent number: 7298453Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.Type: GrantFiled: March 17, 2006Date of Patent: November 20, 2007Assignee: Micron Technology, Inc.Inventors: Ulrich C. Boettiger, Scott L. Light, William T. Rericha, Craig A. Hickman
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Patent number: 7230679Abstract: A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.Type: GrantFiled: April 4, 2006Date of Patent: June 12, 2007Assignee: Micron Technology, Inc.Inventors: Ulrich C. Boettiger, Scott L. Light
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Patent number: 7046340Abstract: A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.Type: GrantFiled: June 16, 2004Date of Patent: May 16, 2006Assignee: Micron Technology, Inc.Inventors: Ulrich C. Boettiger, Scott L. Light
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Patent number: 7038762Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.Type: GrantFiled: July 28, 2004Date of Patent: May 2, 2006Assignee: Micron Technology, Inc.Inventors: Ulrich C. Boettiger, Scott L. Light, William T. Rericha, Craig A. Hickman
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Patent number: 6905975Abstract: The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.Type: GrantFiled: July 3, 2003Date of Patent: June 14, 2005Assignee: Micron Technology, Inc.Inventors: Ulrich C. Boettiger, Scott L. Light