Abstract: A memory module for an electronic device is disclosed which provides means for reducing the amount of power necessary to access a desired number of data bits. This provides a design of memory modules which requires fewer DRAMs to be turned on during a read or write cycle than present module designs, thereby using much less power.

Abstract: The present invention provides a memory device having a mode register with a selectable bit which sets the memory device to operate with a selected one of a plurality of possible clock input signals, for example, a single clock input or differential clock input.

Abstract: An apparatus and method for reducing the power consumption of a memory integrated circuit during a period of power down mode operation by interrupting the clocking transitions of a delay line. A memory integrated circuit may include a delay lock loop including a plurality of delay elements connected to one another in series and adapted to delay propagation of the signal of a free running clock. When the delayed signal is not required, as during a period of power down mode operation, the free running clock signal is prevented from reaching the delay lock loop. Consequently the delay elements do not toggle, and power associated with delay element toggling is saved.

Abstract: A memory module for an electronic device is disclosed which provides means for reducing the amount of power necessary to access a desired number of data bits. This provides a design of memory modules which requires fewer DRAMs to be turned on during a read or write cycle than present module designs, thereby using much less power.

Abstract: An apparatus and method for reducing the power consumption of a memory integrated circuit during a period of power down mode operation by interrupting the clocking transitions of a delay line. A memory integrated circuit may include a delay lock loop including a plurality of delay elements connected to one another in series and adapted to delay propagation of the signal of a free running clock. When the delayed signal is not required, as during a period of power down mode operation, the free running clock signal is prevented from reaching the delay lock loop. Consequently the delay elements do not toggle, and power associated with delay element toggling is saved.

Abstract: An apparatus and method for reducing the power consumption of a memory integrated circuit during a period of power down mode operation by interrupting the clocking transitions of a delay line. A memory integrated circuit may include a delay lock loop including a plurality of delay elements connected to one another in series and adapted to delay propagation of the signal of a free running clock. When the delayed signal is not required, as during a period of power down mode operation, the free running clock signal is prevented from reaching the delay lock loop. Consequently the delay elements do not toggle, and power associated with delay element toggling is saved.

Abstract: A method for accessing a memory array for an electronic device comprises a design which requires fewer memory devices to be activated to access a plurality of data bits, thereby reducing the amount of power required to access the data bits. The design comprises the use of a plurality of memory devices, each of which has a plurality of arrays and data out lines.

Abstract: A memory device is disclosed which includes a refresh control circuit which responds to a refresh request command and performs at least two refresh operations. In the first refresh operation, a first word line is selected and memory cells associated with the first word line are refreshed and thereafter a second word line is selected and memory cells associated with the second word line are refreshed, wherein the first and second refresh requests are separated by a predetermined period of time.

Abstract: A method for programming a synchronous dynamic random access memory (SDRAM) device including a memory array is disclosed. In the method, the SDRAM device is initially programmed to have a first control operating option in response to a first command. Reprogramming of the SDRAM device includes a second control operating option in response to a second command. The array remains simultaneously active in response to an active internal row address signal while the control operation feature is programmed to have the second control operating option.

Abstract: Disclosed is a synchronous DRAM memory module with control circuitry that allows the memory module to operate partially asynchronously. Specifically, a circuit is disclosed which utilizes address transition detection to begin decoding the column-address immediately after a new column-address is present on the address bus lines and without waiting for the column-address strobe signal to synchronize with the rising or falling edge of the synchronizing clock signal. Also disclosed is a manner of controlling the latching circuitry whereby each new column-address may be decoded and held within a buffer until the column-address strobe signal notifies the circuitry that the column-address is correct and is to be input into the microprocessor.

Abstract: A method for accessing a memory array for an electronic device comprises a design which requires fewer memory devices to be activated to access a plurality of data bits, thereby reducing the amount of power required to access the data bits. The design comprises the use of a plurality of memory devices, each of which has a plurality of arrays and data out lines.

Abstract: A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command.

Abstract: Disclosed is a synchronous DRAM memory module with control circuitry that allows the memory module to operate partially asynchronously. Specifically, a circuit is disclosed which utilizes address transition detection to begin decoding the column-address immediately after a new column-address is present on the address bus lines and without waiting for the column-address strobe signal to synchronize with the rising or falling edge of the synchronizing clock signal. Also disclosed is a manner of controlling the latching circuitry whereby each new column-address may be decoded and held within a buffer until the column-address strobe signal notifies the circuitry that the column-address is correct and is to be input into the microprocessor.

Abstract: A synchronous dynamic random access memory (SDRAM) device having a master control circuit for accepting a first command and a second command and having an initialization and reprogramming circuit. The master control circuit generates and initialization signal in response to the first command and generates a reprogramming signal in response to the second command. The initialization and reprogramming circuit responds to the initialization signal to control initial programming of a control operation feature and responds to the reprogramming signal to control a reprogramming of the control operation feature.

Abstract: A synchronous dynamic random access memory (SDRAM) device having a master control circuit for accepting a first command and a second command and having an initialization and reprogramming circuit. The master control circuit generates and initialization signal in response to the first command and generates a reprogramming signal in response to the second command. The initialization and reprogramming circuit responds to the initialization signal to control initial programming of a burst control operation feature and responds to the reprogramming signal to control a reprogramming of the burst control operation feature.

Abstract: A synchronous dynamic random access memory (SDRAM) device having a master control circuit for accepting a first command and a second command and having an initialization and reprogramming circuit. The master control circuit generates an initialization signal in response to the first command and generates a reprogramming signal in response to the second command. The initialization and reprogramming circuit responds to the initialization signal to control initial programming of a control operation feature and responds to the reprogramming signal to control a reprogramming of the control operation feature.

Abstract: A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command.

Abstract: A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command without interrupting the active state of the memory array.

Abstract: A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command.

Abstract: Disclosed is a synchronous DRAM memory module with control circuitry that allows the memory module to operate partially asynchronously. Specifically, a circuit is disclosed which utilizes address transition detection to begin decoding the column-address immediately after a new column-address is present on the address bus lines and without waiting for the column-address strobe signal to synchronize with the rising or falling edge of the synchronizing clock signal. Also disclosed is a manner of controlling the latching circuitry whereby each new column-address may be decoded and held within a buffer until the column-address strobe signal notifies the circuitry that the column-address is correct and is to be input into the microprocessor.