Patents by Inventor Se-Min Lee

Se-Min Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100168759
    Abstract: This disclosure relates to a micro manipulator having a simple structure and having high possibility of recording a biological signal of a neuron at a desired position by improving positioning resolution of an electrode disposed adjacent to a subject's brain neuron or an electrode holder attached with the electrode. The micro manipulator according to the disclosure includes: a motor which includes a shaft and a vibration portion; a mobile which is connected to the shaft so as to be movable along the shaft; and a frame which supports the motor, wherein an electrode is connected to the mobile in a direction parallel to a longitudinal direction of the shaft, and wherein when the mobile moves linearly in accordance with a vibration of the shaft due to the vibration portion, the electrode moves linearly.
    Type: Application
    Filed: August 14, 2009
    Publication date: July 1, 2010
    Inventors: Eui Sung YOON, Sung Wook Yang, Jin Seok Kim, Duk Moon Rho, Ki Tae Park, Se Min Lee, Jei Won Cho, Hee Sup Shin
  • Publication number: 20090212042
    Abstract: Disclosed are an electric range and an induction coil unit used therein. The electric range includes a plate, on which cooking containers are mounted; an induction coil unit provided under the plate, and including a plurality of induction coils; and a control unit to control the operation of the induction coil unit, wherein at least one of the induction coils includes at least one rectilinear part.
    Type: Application
    Filed: October 27, 2008
    Publication date: August 27, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Ho Lee, Seok Weon Hong, Seong Deog Jang, Dae Rae Kim, Se Min Lee
  • Publication number: 20090139986
    Abstract: An induction heating cooker and a control method thereof. The induction heating cooker includes a plurality of heating coil groups, each of the heating coil groups including a plurality of heating coils connected in series, a plurality of inverters to individually supply high-frequency voltages to the heating coil groups, respectively, and a controller to control operations of the inverters such that the high-frequency voltages are supplied to the heating coil groups, respectively, based on the numbers of heating coils upon which at least one cooking container is placed within the respective heating coil groups. Therefore, it is possible to effectively heat the cooking container even though the container is put on any position of a cooking plate irrespective of a specific position of the cooking plate. Also, it is possible to effectively heat the container regardless of the size of the container.
    Type: Application
    Filed: August 13, 2008
    Publication date: June 4, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Ho Lee, Seok Weon Hong, Seong Deog Jang, Dae Rae Kim, Se Min Lee
  • Publication number: 20090120928
    Abstract: Disclosed is an apparatus and method for induction heating. The induction heating cooker determines an existence of a vessel and determines material and a bottom size of the vessel by using resonance voltage, which is applied to a heating coil for heating the vessel, so that a proper control operation is performed corresponding to the existence of the vessel, the material and the bottom size of the vessel.
    Type: Application
    Filed: August 12, 2008
    Publication date: May 14, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Ho Lee, Seok Weon Hong, Seong Deog Jang, Dae Rae Kim, Se Min Lee
  • Patent number: 6723601
    Abstract: A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: April 20, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Se-Min Lee, Dong-Hwan Kim, Keun-Il Lee
  • Publication number: 20030089939
    Abstract: A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.
    Type: Application
    Filed: December 18, 2002
    Publication date: May 15, 2003
    Applicant: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
    Inventors: Se-Min Lee, Dong-Hwan Kim, Keun-Il Lee
  • Patent number: 6518612
    Abstract: A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: February 11, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Se-Min Lee, Dong-Hwan Kim, Keun-Il Lee
  • Publication number: 20020025624
    Abstract: A method for manufacturing a capacitor for use in a semiconductor device comprises forming silicon plugs between junction regions and upper conductive structures by depositing an amorphous silicon layer on a semiconductor substrate and into the contact holes formed in an insulating layer using a low pressure chemical vapor deposition (LPCVD) method. The amorphous silicon layer is then crystallized in an inert gas ambient to form a crystallized silicon layer and a portion of the crystallized silicon layer is removed to expose a top surface of the interlayer insulating film and to form the silicon plugs. Upper conductive structures are then formed on the silicon plugs and a metastable polysilicon (MPS) layer is then selectively formed on the exposed surfaces of the conductive structure.
    Type: Application
    Filed: August 31, 2001
    Publication date: February 28, 2002
    Inventors: Hoon-Jung Oh, Se-Min Lee, Tae-Hyeok Lee, Il-Keoun Han
  • Publication number: 20010023102
    Abstract: A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.
    Type: Application
    Filed: December 20, 2000
    Publication date: September 20, 2001
    Inventors: Se-Min Lee, Dong-Hwan Kim, Keun-Il Lee