Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract: The disclosure relates to a three-dimensional integrated structure comprising a substrate and a plurality of projecting elements projecting from a flat surface thereof and obtained from a patterned and developed dry film photoresist. Advantageously, the three-dimensional integrated structure is highly defined, the projecting elements obtained by the patterned and developed dry film photoresist having a shape factor greater than 6. The three-dimensional integrated structure can be used to directly realize different type of electronic devices, such as microfluidic devices, microreactors or sensor devices.

Abstract: A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.

Abstract: A method of manufacturing an electronic device on a plastic substrate includes: providing a carrier as a rigid support for the electronic device; providing a metallic layer on the carrier; forming the plastic substrate on the metallic layer, the metallic layer guaranteeing a temporary bonding of the plastic substrate to the carrier; forming the electronic device on the plastic substrate; and releasing the carrier from the plastic substrate. Releasing the carrier comprises immersing the electronic device bonded to the carrier in a oxygenated water solution that breaks the bonds between the plastic substrate and the metallic layer.

Abstract: The disclosure relates to a three-dimensional integrated structure comprising a substrate and a plurality of projecting elements projecting from a flat surface thereof and obtained from a patterned and developed dry film photoresist. Advantageously, the three-dimensional integrated structure is highly defined, the projecting elements obtained by the patterned and developed dry film photoresist having a shape factor greater than 6. The three-dimensional integrated structure can be used to directly realize different type of electronic devices, such as microfluidic devices, microreactors or sensor devices.

Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

Abstract: A method of manufacturing an electronic device on a plastic substrate includes: providing a carrier as a rigid support for the electronic device; providing a metallic layer on the carrier; forming the plastic substrate on the metallic layer, the metallic layer guaranteeing a temporary bonding of the plastic substrate to the carrier; forming the electronic device on the plastic substrate; and releasing the carrier from the plastic substrate. Releasing the carrier comprises immersing the electronic device bonded to the carrier in a oxygenated water solution that breaks the bonds between the plastic substrate and the metallic layer.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

Abstract: A method manufactures a gas sensor integrated on a semiconductor substrate. The method includes: realizing a first plurality of openings in the semiconductor substrate; realizing a crystalline silicon membrane suspended on the semiconductor substrate, forming an insulating cavity buried in the substrate; realizing a second plurality of openings in the semiconductor substrate, so as to totally suspend on the semiconductor substrate the crystalline silicon membrane; realizing, through a thermal oxidation process of the totally suspended crystalline silicon membrane, a suspended dielectric membrane; realizing, through selective photolithography, a heating element; realizing, through selective photolithography, electrodes and a pair of electric contacts; and selectively realizing, above the electrodes, a sensitive element by compacting layers of metallic oxide through a sintering process generated in the gas sensor by connecting the electrodes to a voltage generator.

Abstract: An embodiment of a process for realizing a system for recovering heat is described, the process comprising the steps of: formation on a substrate of a plurality of L-shaped down metal structures; deposition of a dielectric layer on the substrate and the plurality of L-shaped down metal structures by using a screen printing approach; definition and opening in the dielectric layer of upper contacts and lower contacts of the L-shaped down metal structures; formation of a plurality of L-shaped up metal structures being connected to the plurality of L-shaped down metal structure in correspondence of the upper and lower contacts so as to form a plurality of serially connected thermocouples, each comprising at least one L-shaped down metal structure and at least one L-shaped up metal structure, being made of different metal materials and interconnected at a junction, the serially connected thermocouples thus realizing the system for recovering heat.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

Abstract: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.