Patents by Inventor See-Eng Phan
See-Eng Phan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959167Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: GrantFiled: June 7, 2022Date of Patent: April 16, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Sang-Ho Yu, Kevin Moraes, Seshadri Ganguli, Hua Chung, See-Eng Phan
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Publication number: 20240062999Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.Type: ApplicationFiled: November 2, 2023Publication date: February 22, 2024Inventors: Yuanhong Guo, Sheng Guo, Marek Radko, Steve Sansoni, Xiaoxiong Yuan, See-Eng Phan, Yuji Murayama, Pingping Gou, Song-Moon Suh
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Patent number: 11854773Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.Type: GrantFiled: March 26, 2021Date of Patent: December 26, 2023Assignee: Applied Materials, Inc.Inventors: Yuanhong Guo, Sheng Guo, Marek Radko, Steve Sansoni, Xiaoxiong Yuan, See-Eng Phan, Yuji Murayama, Pingping Gou, Song-Moon Suh
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Publication number: 20220298625Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: ApplicationFiled: June 7, 2022Publication date: September 22, 2022Inventors: Sang-Ho YU, Kevin MORAES, Seshadri GANGULI, Hua CHUNG, See-Eng PHAN
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Patent number: 11384429Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: GrantFiled: May 18, 2017Date of Patent: July 12, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Sang-Ho Yu, Kevin Moraes, Seshadri Ganguli, Hua Chung, See-Eng Phan
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Publication number: 20210305028Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.Type: ApplicationFiled: March 26, 2021Publication date: September 30, 2021Inventors: Yuanhong Guo, Sheng Guo, Marek Radko, Steve Sansoni, Xiaoxiong Yuan, See-Eng Phan, Yuji Murayama, Pingping Gou, Song-Moon Suh
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Publication number: 20170321320Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: ApplicationFiled: May 18, 2017Publication date: November 9, 2017Inventors: Sang-Ho YU, Kevin MORAES, Seshadri GANGULI, Hua CHUNG, See-Eng PHAN
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Publication number: 20150325446Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: ApplicationFiled: April 9, 2015Publication date: November 12, 2015Inventors: Sang-Ho YU, Kevin MORAES, Seshadri GANGULI, Hua CHUNG, See-Eng PHAN
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Patent number: 8846163Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: GrantFiled: June 5, 2012Date of Patent: September 30, 2014Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 8815724Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: GrantFiled: April 20, 2012Date of Patent: August 26, 2014Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20140076234Abstract: A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.Type: ApplicationFiled: October 18, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh KAO, Jing-Pei Connie CHOU, Chiukin (Steven) LAI, Salvador P. UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Patent number: 8563424Abstract: Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: GrantFiled: April 26, 2012Date of Patent: October 22, 2013Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Publication number: 20120264291Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: April 20, 2012Publication date: October 18, 2012Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20120244704Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: Chien-Teh KAO, Jing-Pei(Connie) CHOU, Chiukin(Steven) LAI, Sal UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong (John) YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Publication number: 20120214303Abstract: Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: ApplicationFiled: April 26, 2012Publication date: August 23, 2012Inventors: SESHADRI GANGULI, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Patent number: 8187970Abstract: Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: GrantFiled: December 15, 2010Date of Patent: May 29, 2012Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Publication number: 20120122320Abstract: Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described.Type: ApplicationFiled: November 15, 2011Publication date: May 17, 2012Applicant: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Zhenjiang Cui, Mehul Naik, See-Eng Phan, Jennifer Shan, Paul F. Ma
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Patent number: 8110489Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: GrantFiled: April 11, 2007Date of Patent: February 7, 2012Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20110223755Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Inventors: CHIEN-TEH KAO, Jing-Pei(Connie) Chou, Chiukin(Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20110124192Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: January 26, 2011Publication date: May 26, 2011Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan