Abstract: A high-speed, low-cost data processing system capable of ensuring expandability of memory capacity and having excellent usability while keeping constant latency is provided. The data processing system is configured to include a data processing device, a volatile memory, and a non-volatile memory. As the data processing device, the volatile memory, and the non-volatile memory are connected in series and the number of connection signals are reduced, the speed is increased while keeping expandability of memory capacity. The data processing device measures latency and performs a latency correcting operation to keep the latency constant. When data in the non-volatile memory is transferred to the volatile memory, error correction is performed to improve reliability.

Abstract: A data archive system includes a data library apparatus and a server. The data library apparatus includes recording media having recording surfaces on both surfaces, a recording media storage unit for storing the recording media, a recording/reproducing unit for the surface for recording/reproducing the data on/from the surface of the recording media, a recording/reproducing unit for the rear surface for recording/reproducing the data on/from the rear surface, and a recording media transporting unit for transporting the recording media between the recording media storage units. The server includes a data configuration unit for allocating the data for recording on the surface and the rear surface of the recording media and a controller for controlling the data library apparatus. The data configuration unit of the server alternately allocates the recording data on the surface and the rear surface of the recording media different from each other.

Abstract: A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.

Abstract: An information processor includes an information processing sub-system having information processing circuits and a memory sub-system performing data communication with the information processing sub-systems, wherein the memory sub-system has a first memory, a second memory, a third memory having reading and writing latencies longer than those of the first memory and the second memory, and a memory controller for controlling data transfer among the first memory, the second memory and the third memory; graph data is stored in the third memory; the memory controller analyzes data blocks serving as part of the graph data, and performs preloading operation repeatedly to transfer the data blocks to be required next for the execution of the processing from the third memory to the first memory or the second memory on the basis of the result of the analysis.

Abstract: A semiconductor device including a nonvolatile memory cell realizes enhancement of reliability and convenience. The semiconductor device includes a nonvolatile memory unit that includes plural overwritable memory cells (CL), and a control circuit that controls access to the nonvolatile memory unit. The control circuit allocates one physical address to a chain memory array CY in the nonvolatile memory unit, for example. The control circuit performs writing to a memory cell (for example, CL0) that is apart of the chain memory array CY according to a first write command with respect to the physical address, and performs writing to a memory cell (for example, CL1) that is another part thereof according to a second write command with respect to the physical address.

Abstract: In a storage device system having a plurality of memory modules including a non-volatile memory, improved reliability and a longer life or the like is to be realized. To this end, a plurality of memory modules (STG) notifies a control circuit DKCTL0 of a write data volume (Wstg) that is actually written in an internal non-volatile memory thereof. The control circuit DKCTL0 finds a predicted write data volume (eWd) for each memory module on the basis of the write data volume (Wstg), a write data volume (Wh2d) involved in a write command that is already issued to the plurality of memory modules, and a write data volume (ntW) involved in a next write command. Then, a next write command is issued to the memory module having the smallest predicted write data volume.

Abstract: A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.

Abstract: A random access memory includes a data signal line, a data-synchronization signal line for a data synchronization signal which provides a synchronization signal when data is transmitted to the data signal line, and a setting module. The setting module determines whether the data signal line is set to be a data signal line for common input/output use, a data signal line for output-only use, or a data signal line for input-only use, and further determines whether the data-synchronization signal line is set to be a data-synchronization signal line for common input/output use, a data-synchronization signal line for output-only use, or a data-synchronization signal line for input-only use.

Abstract: A read cache and a write cache are made up of two kinds of nonvolatile memories whose characteristics are different. For example, nonvolatile memory whose write endurance is high is assigned to the write cache, nonvolatile memory whose write endurance is low is assigned to the read cache, and the management tables of data in these caches are stored in the nonvolatile memory whose write endurance is high. Alternatively, nonvolatile memory that has a fast write speed but has a slow read speed is adopted for the write cache and nonvolatile memory that has a fast read speed but has a slow write speed is adopted for the read cache.

Abstract: The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.

Abstract: An object of the present invention is to realize a highly reliable long-life information processor capable of high-speed operation and easy to handle. The processor includes a semiconductor device comprising a nonvolatile memory device including a plurality of overwritable memory cells, and a control circuit device for controlling access to the nonvolatile memory device. The control circuit device sets assignments of second addresses to the nonvolatile memory device independently of first addresses externally supplied, such that the physical disposition of part of the memory cells used for writing of first data to be written externally supplied is one of the first to (N+1)th of every (N+1) memory cells (N: a natural number) at least in one direction.

Abstract: A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.

Abstract: A pseudoelastic magnesium alloy contains magnesium as the main component thereof, and at least one element selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, wherein the pseudoelastic magnesium alloy has a unidirectional crystal structure.

Abstract: Provided is a user-friendly information processing system which is capable of maintaining latency within a fixed range and ensuring the expandability of a memory capacity at high speed and low cost. The information processing system, including an information processing device, a volatile memory, and nonvolatile memories, is configured. The information processing device, the volatile memory, and the nonvolatile memories are connected in series with one another to reduce the number of connection signals, thereby realizing speeding-up while maintaining the expandability of the memory capacity. The information processing device manages response time zones and time zones where responses overlap one another, and performs a correction operation on the latency, thereby realizing fast data transfer while maintaining the latency within the fixed range. The information processing device performs an error correction to improve the reliability when transferring the data of the nonvolatile memories to the volatile memory.

Abstract: An object of the present invention is to realize a highly reliable long-life information processor capable of high-speed operation and easy to handle. The processor includes a semiconductor device comprising a nonvolatile memory device including a plurality of overwritable memory cells, and a control circuit device for controlling access to the nonvolatile memory device. The control circuit device sets assignments of second addresses to the nonvolatile memory device independently of first addresses externally supplied, such that the physical disposition of part of the memory cells used for writing of first data to be written externally supplied is one of the first to (N+1)th of every (N+1) memory cells (N: a natural number) at least in one direction.

Abstract: A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.

Abstract: A storage system and method for setting parameters and determining latency in a chained device system. Storage nodes store information and the storage nodes are organized in a daisy chained network. At least one of one of the storage nodes includes an upstream communication buffer. Flow of information to the storage nodes is based upon constraints of the communication buffer within the storage nodes. In one embodiment, communication between the master controller and the plurality storage nodes has a determined maximum latency.

Abstract: Provided is a user-friendly information processing system which is capable of maintaining latency within a fixed range and ensuring the expandability of a memory capacity at high speed and low cost. The information processing system, including an information processing device, a volatile memory, and nonvolatile memories, is configured. The information processing device, the volatile memory, and the nonvolatile memories are connected in series with one another to reduce the number of connection signals, thereby realizing speeding-up while maintaining the expandability of the memory capacity. The information processing device manages response time zones and time zones where responses overlap one another, and performs a correction operation on the latency, thereby realizing fast data transfer while maintaining the latency within the fixed range. The information processing device performs an error correction to improve the reliability when transferring the data of the nonvolatile memories to the volatile memory.

Abstract: The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.

Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment a storage system includes a plurality of storage nodes and a master controller. The storage nodes store information. The storage node includes an upstream communication buffer which is locally controlled at the storage node to facilitate resolution of conflicts in upstream communications. The master controller controlls the flow of traffic to the node based upon constraints of the upstream communication buffer. In one embodiment, communication between the master controller and the node has a determined maximum latency. The storage node can be coupled to the master controller in accordance with a chain memory configuration.