Patents by Inventor Seon-Mee Cho

Seon-Mee Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7589028
    Abstract: Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.
    Type: Grant
    Filed: November 15, 2005
    Date of Patent: September 15, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: Seon-Mee Cho, Mike Barnes, Michelle Schulberg, George D. Papasouliotis
  • Publication number: 20090203197
    Abstract: Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 13, 2009
    Inventors: HIROJI HANAWA, Seon-Mee Cho, Majeed A. Foad
  • Publication number: 20090195777
    Abstract: The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
    Type: Application
    Filed: April 2, 2009
    Publication date: August 6, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kartik Ramaswamy, Seon-Mee Cho, Tsutomu Tanaka, Majeed A. Foad
  • Publication number: 20090197401
    Abstract: Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
    Type: Application
    Filed: February 6, 2008
    Publication date: August 6, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Shijian Li, Kartik Ramaswamy, Hiroji Hanawa, Seon-Mee Cho, Biagio Gallo, Dongwon Choi, Majeed A. Foad
  • Patent number: 7531469
    Abstract: The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
    Type: Grant
    Filed: March 2, 2007
    Date of Patent: May 12, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Seon-Mee Cho, Tsutomu Tanaka, Majeed A. Foad
  • Patent number: 7491653
    Abstract: A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: February 17, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: George D. Papasouliotis, Seon-Mee Cho, Ron Rulkens, Mihai Buretea, Dennis M. Hausmann, Michael Barnes
  • Publication number: 20080286982
    Abstract: A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber.
    Type: Application
    Filed: May 15, 2007
    Publication date: November 20, 2008
    Inventors: Shijian Li, Lily L. Pang, Majeed A. Foad, Seon-Mee Cho
  • Publication number: 20080188013
    Abstract: The present invention generally provides methods and apparatus for monitoring ion dosage during a plasma process. One embodiment of the present invention provides a method for processing a substrate comprising generating a correlation between the at least one attribute of the plasma and a dosage quantity.
    Type: Application
    Filed: February 4, 2008
    Publication date: August 7, 2008
    Inventors: Seon-Mee Cho, Majeed A. Foad
  • Publication number: 20080149135
    Abstract: A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.
    Type: Application
    Filed: December 12, 2007
    Publication date: June 26, 2008
    Inventors: Seon-Mee Cho, Majeed A. Foad
  • Publication number: 20080153306
    Abstract: A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.
    Type: Application
    Filed: December 11, 2007
    Publication date: June 26, 2008
    Inventors: Seon-Mee Cho, Majeed A. Foad
  • Publication number: 20080075834
    Abstract: The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
    Type: Application
    Filed: March 2, 2007
    Publication date: March 27, 2008
    Inventors: Kartik Ramaswamy, Seon-Mee Cho, Tsutomu Tanaka, Majeed A. Foad
  • Patent number: 7265061
    Abstract: Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: September 4, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Seon-Mee Cho, Easwar Srinivasan, Brian G. Lu, David Mordo
  • Patent number: 7253125
    Abstract: Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: August 7, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Ananda K. Bandyopadhyay, Seon-Mee Cho, Haiying Fu, Easwar Srinivasan, David Mordo
  • Patent number: 7163899
    Abstract: A densified dielectric film is formed on a substrate by a process that involves annealing a film deposited on the substrate by application of a localized energy pulse, such as a laser pulse, for example one of about 10 to 100 ns in duration from an excimer laser, that raises the temperature of the film above 1000° C. without raising the substrate temperature sufficiently to modify its properties (e.g., the substrate temperature remains below 550° C. or preferably in many applications below 400° C.). The dielectric deposition may be by any suitable process, for example CVD, SOG (spin-on glass), ALD, or catalyzed PDL. The resulting film is densified without detrimentally impacting underlying substrate layers. The invention enables dielectric gap fill and film densification at low temperature to the 45 nm technology node and beyond, while maintaining oxide film properties.
    Type: Grant
    Filed: January 5, 2006
    Date of Patent: January 16, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Seon-Mee Cho, George D. Papasouliotis
  • Patent number: 7153787
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: December 26, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Patent number: 7036453
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: May 2, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Patent number: 6943127
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: September 13, 2005
    Assignee: Applied Materials Inc.
    Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Patent number: 6926926
    Abstract: A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 ? cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
    Type: Grant
    Filed: September 10, 2001
    Date of Patent: August 9, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Seon-Mee Cho, Hichem M'Saad, Farhad Moghadam
  • Publication number: 20050153572
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Application
    Filed: January 27, 2005
    Publication date: July 14, 2005
    Inventors: Seon-Mee Cho, Peter Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Publication number: 20040161536
    Abstract: A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during the remaining time of the deposition.
    Type: Application
    Filed: February 14, 2003
    Publication date: August 19, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Chi-I Lang, Seon-Mee Cho, Peter Wai-Man Lee