Patents by Inventor Seon-Mee Cho

Seon-Mee Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6713390
    Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: March 30, 2004
    Assignee: Applied Materials Inc.
    Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula
  • Publication number: 20040048492
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Application
    Filed: September 8, 2003
    Publication date: March 11, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Patent number: 6660662
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: December 9, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Publication number: 20030104708
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Application
    Filed: November 22, 2002
    Publication date: June 5, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Publication number: 20030049388
    Abstract: A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 &OHgr; cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
    Type: Application
    Filed: September 10, 2001
    Publication date: March 13, 2003
    Inventors: Seon-Mee Cho, Hichem M'Saad, Farhad Moghadam
  • Publication number: 20030032282
    Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
    Type: Application
    Filed: July 12, 2002
    Publication date: February 13, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula
  • Publication number: 20030024901
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Application
    Filed: January 26, 2001
    Publication date: February 6, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Publication number: 20030003768
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Application
    Filed: June 18, 2001
    Publication date: January 2, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Patent number: 6486082
    Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: November 26, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
  • Patent number: 6399489
    Abstract: A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less.
    Type: Grant
    Filed: November 1, 1999
    Date of Patent: June 4, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula