Abstract: In general, embodiments of the technology relate to improving read performance of solid-state storage by using decoding parameters deemed particularly suitable for the read operation that is currently being performed. More specifically, embodiments of the technology relate to using different decoding parameters when a read operation needs to be repeated because the initial read operation has failed.

Abstract: Systems, methods and/or devices that enhance the reliability with which data can be stored in and read from a memory utilize an error indicator, obtained from using one reading threshold voltage for decoding, to adaptively determine the reading threshold voltage(s) used for subsequent decoding attempts. For example, in some implementations, the method includes initiating performance of a first read operation, using a first reading threshold voltage, to obtain a first error indicator, and further includes initiating performance of a second set of additional read operations using two or more second reading threshold voltages, the second reading threshold voltages determined in accordance with the first error indicator, to obtain a second error indicator. In some embodiments, when the first error indicator is greater than a first threshold, a difference between two of the second reading threshold voltages is greater than when the first error indicator is less than a first threshold.

Abstract: A method is provided that includes performing first decoding operations on data obtained from a plurality of units of memory using soft information values for the plurality of units of memory, where the plurality of units of memory includes an error correction stripe. The method further includes determining that two or more units of memory have uncorrectable errors. The method further includes updating a soft information value for a first unit of memory in accordance with a magnitude of a soft information value for a second unit and a direction based on parity of the error correction stripe excluding the first unit, where the first unit of memory and the second unit of memory are included in the two or more units of memory that have uncorrectable errors. The method further includes performing a second decoding operation on data obtained from the first unit using the updated soft information value.

Abstract: The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes, in response to one or more host read commands, reading data from a set of memory cells in a flash memory array in accordance with a first reading threshold voltage and performing an error correction process on the read data to produce error correction information. The method further includes determining, based on the error correction information, whether to adjust the first reading threshold voltage, and upon determining to adjust the first reading threshold voltage, setting the value of the first reading threshold voltage to a value greater or less than a current value of the first reading threshold voltage. In some implementations, the method further includes initiating a recalibration of the first reading threshold voltage when a predefined condition occurs.

Abstract: The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. Some implementations include a method of compressing a sequence of read data values into a bit-tuple of a predefined length to enable soft information decoding systems that use less power and/or less memory. In some implementations, the bit-tuple of a predefined length is produced using M single-bit buffer locations, where M corresponds to the predefined length of the bit-tuple. Some implementations utilize a collection of characterization vectors that include soft information values associated with the possible permutations of the bit-tuples. In turn, a sequence of bit-tuples is converted into a sequence of soft information values by retrieving a particular characterization vector, and selecting a respective soft information value from that characterization vector for each bit-tuple in the sequence.

Abstract: A data storage device includes a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a condition associated with a defect in the word line. A first subset of the plurality of storage elements and a second subset of the plurality of storage elements are determined based on an estimated location of the defect. The method further includes determining a first read threshold for the first subset and a second read threshold for the second subset.

Abstract: The reliability with which data can be read from a storage medium, such as flash memory storage medium, is enhanced by updating an upper limit of a reading threshold voltage window for a respective portion of the storage medium. For each memory cell in the respective portion of the storage medium, a memory controller is configured to perform a plurality of sensing operations and obtain results from the plurality of sensing operations, where the plurality of sensing operations includes sensing operations using a predefined range of offsets from a previously established reading threshold voltage. The memory controller is further configured to determine the updated upper limit of the reading threshold voltage window based on the-results from the plurality of sensing operations, and store the updated upper limit of the reading threshold voltage window for the respective portion of the storage medium.

Abstract: Mechanisms are provided for detecting whether at least one of two or more portions of memory (e.g. chips, blocks, sectors, planes, pages, word lines, etc.) are more error-prone than the others, when portions of codewords are interleaved across the two or more portions of memory. Some implementations also enable various remedial operations that can be selectively employed in response to detecting an unbalanced error condition in order to reduce the risks associated with interleaving portions of codewords across two or more portions of memory.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method includes reading a representation of tracking data from at least a portion of a non-volatile memory. The method further includes adjusting a read voltage based on a comparison between a number of bits in tracking data as compared to a count of bits in the representation of the tracking data.

Abstract: Systems, methods and/or devices that enhance the reliability with which data can be stored in and read from a memory utilize an error indicator to adaptively determine the soft information values used for decoding. For example, in some implementations, the method includes selecting a first set of one or more soft information values and receiving a read data command. The method further includes responding to the read data command by initiating performance of a data access operation to access data in a storage medium, the data access operation producing a syndrome weight; determining a first indicator based at least in part on the syndrome weight; based on the first indicator, selecting a second set of one or more soft information values; and decoding data obtained from the data access operation using the second set of one or more soft information values to produce a result.

Abstract: A data storage device includes a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a condition associated with a defect in the word line. A first subset of the plurality of storage elements and a second subset of the plurality of storage elements are determined based on an estimated location of the defect. The method further includes determining a first read threshold for the first subset and a second read threshold for the second subset.

Abstract: A data storage device includes a non-volatile memory and a controller. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a condition associated with a defect in the word line. A first subset of the plurality of storage elements and a second subset of the plurality of storage elements are determined based on an estimated location of the defect. The method further includes determining a first read threshold for the first subset and a second read threshold for the second subset.

Abstract: The reliability with which data can be read from a storage medium, such as flash memory storage medium, is enhanced by updating an upper limit of a reading threshold voltage window for a respective portion of the storage medium. For each memory cell in the respective portion of the storage medium, a memory controller is configured to perform a plurality of sensing operations and obtain results from the plurality of sensing operations, where the plurality of sensing operations includes sensing operations using a predefined range of offsets from a previously established reading threshold voltage. The memory controller is further configured to determine the updated upper limit of the reading threshold voltage window based on the-results from the plurality of sensing operations, and store the updated upper limit of the reading threshold voltage window for the respective portion of the storage medium.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method includes receiving hard bit data and soft bit data corresponding to a portion of a memory, where each storage element of the memory stores multiple bits per storage element. The hard bit data and the soft bit data is received in connection with reading a single bit of the multiple bits from each storage element in the portion of the memory based on one or more first read voltages. One or more second read voltages based on the hard bit data and the soft bit data are generated in response to a read voltage update operation. The memory reads data from the portion of the memory using the one or more second read voltages.

Abstract: An aliasing module is defined and connected to receive a first bit stream to be transmitted over a data bus from a memory to an external controller of the memory. The aliasing module is defined and connected to alias the first bit stream as a second bit stream and transmit the second bit stream over the data bus in lieu of the first bit stream. A de-aliasing module is defined and connected to receive the second bit stream from the data bus at the external controller. The de-aliasing module is defined and connected to de-alias the received second bit stream back to the first bit stream and provide the first bit stream to the external controller for processing.

Abstract: A method includes reading a representation of tracking data from at least a portion of a non-volatile memory. The method further includes adjusting a read voltage based on a comparison between a number of bits in tracking data as compared to a count of bits in the representation of the tracking data.